5results about How to "Increased physical size" patented technology

The broadband dual-polarization magnetoelectric dipole antenna comprises a first dielectric layer and a second dielectric layer arranged below the first dielectric layer, and the first dielectric layer and the second dielectric layer are connected through a bonding layer to serve as an antenna substrate for supporting a magnetoelectric dipole unit. The magnetoelectric dipole unit comprises metal patches and magnetic dipoles, the metal patches and the magnetic dipoles are used as electric dipoles and magnetic dipoles, the magnetic dipoles penetrate through the first dielectric layer and are arranged on the lower side of the second dielectric layer, and the four metal patches are annularly and uniformly arranged on the upper side face of the first dielectric layer; the shape of the metal patch is a rectangle with semi-elliptical chamfers on two side edges of the outer edge; any metal patch is coupled with two gain patches arranged on the first dielectric layer, and the gain patches are circular. The problem that in the prior art, a magnetoelectric dipole antenna is poor in impedance bandwidth capacity, and therefore the requirement of people for the network information transmission speed cannot be met is solved.

The utility model relates to an anti-airlock anti-snap wear-resistant corrosion-resistant pump with an anti-magnetic valve, which belongs to the technical field of oil extraction equipment for oil fields and comprises a pump cylinder, a plunger is arranged in the pump cylinder, the upper end of the plunger is connected with a central pipe, the end of the central pipe is provided with an upper oil outlet connector, and the upper end of the pump cylinder is connected with a first pump cylinder coupling. The oil well pump is used in oil wells containing sand, gas and corrosive media, and can prevent corrosion, abrasion and airlock so as to prolong the service life and improve the pump efficiency.

The invention relates to a mud-resistant polycarboxylate superplasticizer and a preparation method and application thereof, and the mud-resistant polycarboxylate superplasticizer is prepared from the following raw materials in parts by weight: 200-210 parts of unsaturated polyether macromonomer; 10 to 20 parts of a mud-resistant functional monomer; 8 to 16.5 parts of unsaturated carboxylic acid and / or unsaturated carboxylic ester; 0.5 to 2.5 parts of an initiator; 0.1 to 0.5 part of a reducing agent; 0.6 to 1.6 parts of a chain transfer agent; and a neutralizing agent; according to the synthesized anti-mud type polycarboxylic acid water reducer, unsaturated cyclic pyrophosphate is introduced into an unsaturated polyether side chain to serve as a main anti-mud functional monomer in a free radical solution copolymerization mode, and the slump retaining performance and the anti-mud performance of the polycarboxylic acid water reducer are improved.

The invention provides a surface acoustic wave transducer and a surface acoustic wave device. In the surface acoustic wave transducer, the density of at least part of the material of the interdigital electrode in the edge region is higher than the density of the material of the interdigital electrode in the main region, so that the acoustic velocity of the edge region is adjusted to be lower than the acoustic velocity of the main region, a working state of a piston mode can be generated, and effective suppression of a transverse mode is realized; and the performance and reliability of the surface acoustic wave device are improved. In specific application, parameters such as materials and thicknesses of the interdigital electrode and all areas, materials of the bus and the like can be flexibly adjusted according to requirements, so that the transverse suppression is realized, the power tolerance of the device is improved, and the electromechanical performance of the surface acoustic wave device is optimized.

The present disclosure relates to the technical field of semiconductor technology, and relates to a semiconductor structure, a forming method thereof and a memory. The semiconductor structure comprises a substrate, a word line structure, a conductive contact structure and a buffer layer, wherein: the substrate comprises an active region, the active region comprises a channel region and a source region and a drain region distributed on both sides of the channel region respectively, and the channel region has a word line trench; the word line structure is located in the word line trench; the conductive contact structure is connected with the top of the drain region; and the buffer layer is located between the conductive contact structure and the word line structure. The semiconductor structure can reduce leakage, improve device reliability and reduce standby power consumption.