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The present disclosure relates to the technical field of semiconductor technology, and relates to a semiconductor structure, a forming method thereof and a memory. The semiconductor structure comprises a substrate, a word line structure, a conductive contact structure and a buffer layer, wherein: the substrate comprises an active region, the active region comprises a channel region and a source region and a drain region distributed on both sides of the channel region respectively, and the channel region has a word line trench; the word line structure is located in the word line trench; the conductive contact structure is connected with the top of the drain region; and the buffer layer is located between the conductive contact structure and the word line structure. The semiconductor structure can reduce leakage, improve device reliability and reduce standby power consumption.