63 results about "Enhanced luminescence" patented technology

The invention belongs to the technical field of OLEDs, and provides a polycyclic compound containing triphenyl silicon and a polyalkyl substituent group and an organic electroluminescent device containing the polycyclic compound. The structural general formula of the polycyclic compound is as shown in formula I in the specification. Benzofuran with higher electronegativity is introduced to a ring structure composed of nitrogen atoms and boron atoms, triphenyl silicon is introduced to the para-position of boron, and the synergistic effect of benzofuran and triphenyl silicon can significantly enhance the multiple resonance of a light-emitting core and reduce vibration relaxation. Due to simultaneous use of the benzofuran and the triphenyl silicon, the problems of vibration relaxation increase, spectrum widening and the like caused by introduction of the polyalkyl substituent are remarkably improved, the luminous efficiency of the material is remarkably improved, and the color purity is improved, so that the requirement of BT.2020 wide color gamut display standard on a luminescent spectrum is met. I

The invention discloses a darkness-induced enhanced luminescence expression vector as well as a construction method and application thereof, and the enhanced luminescence expression vector is constructed by taking a vector pDES as a skeleton vector. A core element formed by sequentially connecting a promoter PsDIN6, a mutated nnLuz gene mnnLuz, a HisspS gene of neon lamp bacteria, an H3H gene, a CPH gene and an NPGA gene of aspergillus nidulans is inserted between an attR1 element and an attR2 element of a vector pDES from the 5'end to the 3 'end, and the vector is obtained. A luciferase Luz gene of luminous fungus neon lamp bacteria is subjected to random mutation by using a directed evolution technology, a luciferase mutant gene mLuz of which the luminous efficiency is 5.7 times higher than the original luminous efficiency is obtained through screening, and an expression vector constructed by the luciferase mutant gene mLuz is instantaneously expressed on tobacco leaves, so that the tobacco leaves do not emit light in daytime and emit bright fluorescence in darkness.

The invention relates to the technical field of photoluminescence materials, and particularly discloses a coordination polymer scintillator, a flexible scintillator film and application thereof.The prepared coordination polymer scintillator emits green light under a 360-nm excitation light source and under irradiation of an X-ray light source, has excellent linear responsiveness to X-rays and can be applied to the field of photoluminescence materials. According to the present invention, the prepared scintillator film has the obvious thermal activation enhanced luminescence, when the signal-to-noise ratio is 3, the lowest detection limit of the scintillator can achieve 29.6 nGy / s, the value is about 186 times lower than the detection limit (5500 nGy / s) required by a typical medical imaging system, and the prepared scintillator film can achieve the X-ray imaging effect on different objects, such that the X-ray imaging effect can be easily achieved. The scintillator film prepared by the invention can completely replace the current commercial scintillator.

The present invention discloses a perovskite quantum dot glass with enhanced luminescence capability, a preparation method thereof, and an application thereof, and belongs to the field of perovskite quantum dot glass display technology. The present invention regulates the network structure of borosilicate glass by adding ZrO2, so that the perovskite quantum precursor glass gradually changes from self-crystallization to transparency and finally to devitrification, the network structure of the glass matrix is ​​ordered, the surface defects at the interface between the perovskite quantum dots and the glass matrix are passivated, and the radiation recombination probability is increased, thereby obtaining a perovskite quantum dot glass with significantly improved photoluminescence performance. The perovskite quantum dot glass has a green light emission wavelength of 527nm, a full width at half maximum (FWHM) of 25.8nm, an internal quantum dot efficiency of 93.1%, and a brightness of 375cd / m ‑2 The maximum green light brightness under the excitation of the blue light (450nm) plate can reach 2647cd / m ‑2 When this perovskite quantum dot glass is used as an LED backlight module in LCD display, it can achieve a color gamut area of ​​118% of the NTSC standard, which is 1.73 times the color gamut of commercial displays, achieving a wide color gamut display effect.

This invention belongs to the field of functional materials technology, and more specifically, relates to a linear polymer, a photoreactive luminescence-enhanced crosslinked polymer, and their applications. The linear polymer is obtained by homopolymerization or copolymerization with other monomers of an organometallic complex. The linear polymer emits almost no light under ultraviolet or visible light excitation, but undergoes a photochemical reaction under strong ultraviolet irradiation, resulting in polymer crosslinking and enhanced luminescence. The degree of crosslinking, the intensity of luminescence after crosslinking, and the color of the luminescence can be controlled by the ratio of the polymerizable monomer to the comonomer of the organometallic complex. The crosslinked polymer can be used in fields such as information encryption, security anti-counterfeiting, and data storage.

The invention involves the development of an enhanced luminescent concentrator solar panel using a specific method to capture and concentrate the maximum percentage of solar energy. The solution is a luminescent solar panel that absorbs all incident energy without dispersion on the opposite side (no semi-transparency). This enhanced luminescent solar concentrator operates with sunlight and is made up of a transparent material, a specific distribution of composite pigment consisting of diffusive and reflective elements with an intermediate layer reflecting solar light, photovoltaic strips positioned at the lateral edges of the transparent portion, and a reflective base. Solar light incident on the panel is diffused by the pigment and trapped in the underlying part through a funnel-shaped region and the reflection between the intermediate layer and the lower reflective base of the panel. The trapped light remains concentrated and is transferred to the photovoltaic elements through reflection. This invention is innovative because it allows for the creation of an enhanced luminescent concentrator solar panel (LSC) that absorbs the majority of incident energy, reducing losses. This application is highly effective as it can be used as a coating for opaque surfaces (non-glass) in green energy generation. These results are achieved without the need for expensive materials or equipment, thanks to the synergies among the constituent parts, making it ready for immediate industrialization.

The application discloses a display panel, a preparation method of the display panel and a display device. The display panel comprises a substrate, a reflective electrode layer located on one side of the substrate, the reflective electrode layer comprising a plurality of reflective electrode units, at least part of the reflective electrode units being provided with optical gain structures protruding away from the substrate, a light-emitting layer located on the side of the reflective electrode layer away from the substrate, the light-emitting layer comprising a plurality of light-emitting units, the light-emitting unit comprising main light-emitting structures and auxiliary light-emitting structures which are stacked and have different light-emitting colors, and a color conversion layer provided on the side of the light-emitting layer away from the substrate. The display panel provided by the first aspect of the application introduces the auxiliary light-emitting structures with different light-emitting colors to enhance the brightness of the light-emitting unit, prolongs the service life, and the optical gain structures can further fine-tune the microcavity length in the optical device, so that the microcavity length is matched with the wavelength of blue light to form standing wave resonance, the proportion of blue light in the light emission is improved, and the color purity of the blue light emission is ensured.

The embodiment of the invention provides a display panel, a preparation method of the display panel and a display device. The light emitting efficiency of the light emitting side of the display panel is improved. The display panel comprises: a substrate; the pixel definition layer is positioned on one side of the substrate; the first dimming layer is located on the side, away from the substrate, of the pixel definition layer, the orthographic projection of the first dimming layer on the substrate covers the orthographic projection of the pixel definition layer on the substrate, and the first dimming layer comprises a plurality of hole structures; the second dimming layer is located on the side, away from the substrate, of the first dimming layer, the hole structure is filled with the second dimming layer, and the refractive index of the second dimming layer is larger than that of the first dimming layer. Therefore, the concentration of the light emitted by the light-emitting unit is enhanced, the light brightness of the light-emitting side is improved, the light-emitting efficiency of the light-emitting side is improved, and the light extraction capability is enhanced.

The invention discloses an LED light-emitting structure, a manufacturing method thereof and a light-emitting device, the LED light-emitting structure is of a multi-layer structure, and the LED light-emitting structure sequentially comprises an LED light source, a grating layer, a gradient refraction layer and a micro-lens array layer from bottom to top; the grating layer is used for diffracting light rays emitted by the LED light source to the gradient refraction layer at different angles; the gradient refraction layer comprises a bottom refraction layer, a middle refraction layer and a top refraction layer, the refractive indexes of the bottom refraction layer, the middle refraction layer and the top refraction layer are sequentially reduced, the bottom refraction layer is connected with the grating layer, the top refraction layer is connected with the micro-lens array layer, and the gradient refraction layer is used for increasing the emergent angle of light; the micro-lens array layer is used for uniformly distributing the light rays emitted by the gradient refraction layer at a larger angle; in combination with three optical structures of the grating layer, the gradient refraction layer and the micro-lens array layer, step-by-step modulation control of light is realized, functional complementation and synergistic interaction of all the layers are realized, the light emitting angle can be obviously increased, the light emitting uniformity can be enhanced, and in the gradient refraction layer, the refractive index gradient can be smoothed so as to improve the light distribution uniformity.

The present invention belongs to the technical field of semiconductor devices, and particularly relates to an inverted BLU light-emitting diode chip and a preparation method thereof. The chip includes a substrate, an epitaxial layer, a first Bragg reflection layer, and a second Bragg reflection layer. The epitaxial layer is disposed on the substrate, and the first Bragg reflection layer is disposed on a side of the substrate facing away from the epitaxial layer for reflecting light with an angle between 45° and 90° with respect to the substrate. The second Bragg reflection layer is disposed on a side of the first Bragg reflection layer facing away from the substrate for reflecting light with an angle between 0° and 45° with respect to the substrate. A through hole of the second Bragg reflection layer penetrating through the first Bragg reflection layer is provided at the center of the second Bragg reflection layer. The present invention can enhance the side light emission of the light-emitting diode chip, increase the central light intensity, and make the light emission of the center and the edge of the light-emitting diode chip uniform.

Embodiments of the present application provide a display panel, a preparation method thereof and a display device to improve the light extraction efficiency of the light emitting side of the display panel. The display panel comprises a substrate, a pixel definition layer located on one side of the substrate, a first light modulation layer located on the side of the pixel definition layer away from the substrate, the orthographic projection of the first light modulation layer on the substrate covering the orthographic projection of the pixel definition layer on the substrate, the first light modulation layer comprising a plurality of hole structures, and a second light modulation layer located on the side of the first light modulation layer away from the substrate, the second light modulation layer filling the hole structures, the refractive index of the second light modulation layer being greater than the refractive index of the first light modulation layer. In this way, the concentration of light emitted by the light emitting unit is enhanced, the light brightness of the light emitting side is improved, the light extraction efficiency of the light emitting side is improved, and the light extraction capability is enhanced.

The invention discloses a chiral binaphthol-based fluorescent material as well as a preparation method and application thereof, and belongs to the technical field of organic photoelectric materials. The fluorescent material takes a chiral binaphthyl derivative as a skeleton, and a chiral binaphthyl group is introduced into a para-position position of tetrafluoroterephthalonitrile, so that a chiral space charge transfer luminescence system with a clear structure is formed. The preparation method comprises two steps of nucleophilic substitution reaction, the reaction condition is mild, the synthetic route is simple, and the yield is stable. The material has dual-state emission and aggregation enhanced luminescence characteristics, avoids aggregation quenching, has excellent circular polarization luminescence performance, has a luminescence asymmetry factor (Glum) of 3.6 * 10 <-3 >-5.9 * 10 <-3 >, and can still maintain stable chiral luminescence characteristics in a doped film. The material can be widely applied to the fields of commercial anti-counterfeiting, fluorescent ink, circular polarization luminescent devices, 3D display, information encryption, biological probes, LED light sources and the like, and has good industrial amplification potential and practical application value.

The invention relates to transition metal luminescent complexes and methods of use. Described herein are transition metal complexes containing nickel (II) and tridentate and tetradentate ligands as central metal atoms. The transition metal complexes also include auxiliary ligands having strong sigma-giving properties. The auxiliary ligand enhances luminescence by increasing the opportunity of filling in the emission state. The transition metal complexes emit at room temperature and / or low temperature in various media so that they can be used as luminescent materials for OLEDs.

The utility model provides a light-emitting element and a light-emitting device. The light-emitting element comprises a substrate and an LED chip, and the orthographic projection of the LED chip on the first surface of the substrate and the first surface of the substrate are both square; an electrode is arranged at each of a pair of diagonal positions on the surface, deviating from the substrate, of the LED chip, and the electrodes are electrically connected with the substrate. The two electrodes, deviating from the surface of the substrate, of the LED chip are respectively arranged at one pair of diagonal positions, so that current is more uniformly injected into each region of the chip on the premise that the light-emitting area of the chip is not reduced; the luminous intensity on the surface of the chip is more uniformly distributed, and the illumination quality is improved; the light-emitting element can generate more uniform light spots; the lower voltage requirement can be met, the energy efficiency of the light-emitting element is improved, and the energy consumption is reduced; the temperature and brightness uniformity of the light-emitting element are improved, and the reliability and performance of the light-emitting element are enhanced.

The invention discloses an aggregation-induced emission photocatalyst as well as a preparation method and application thereof, and belongs to the technical field of preparation of compounds. The structural formula of the aggregation-induced emission photocatalyst is as shown in formula I, wherein R1 is F or Cl; r2 is a diphenylamino group, a substituted diphenylamino group, a triphenylamino group or a substituted triphenylamino group; and R3 is Br, a substituted diphenylamino group, a triphenylamino group or a substituted triphenylamino group. The photocatalyst has visible light absorption, aggregation enhanced luminescence and reduction activity. According to the preparation method, a 4, 7-dibromobenzothiadiazole derivative and aromatic amine are subjected to Buchwald or Suzuki reaction, and the condition is mild. The catalyst is used for metal-free light-operated atom transfer radical polymerization, can efficiently catalyze the polymerization of acrylate monomers under the irradiation of a blue light or green light LED with a low dosage of 5-100 ppm, realizes high conversion rate, narrow distribution and block synthesis, is suitable for an aqueous phase system, and has good biocompatibility and large-scale prospects.

The application discloses an alkali ion passivated non-lead perovskite light-emitting diode and a preparation method thereof, and belongs to the technical field of light-emitting diodes.The light-emitting diode comprises, from bottom to top, ITO conductive glass, a hole injection layer, a hole transport layer, a non-lead perovskite light-emitting layer, an electron transport layer, an electrode modification layer and a metal electrode.The application further provides a preparation method of the non-lead perovskite light-emitting diode.The non-lead perovskite light-emitting layer is prepared by an anti-solvent crystallization method from an alkali ion passivated non-lead perovskite precursor solution and an anti-solvent, and the alkali ion is introduced to inhibit non-radiative recombination loss in a surface and a grain boundary of the non-lead perovskite thin film, so that the light-emitting efficiency is enhanced, and the photoelectric performance of the non-lead perovskite light-emitting diode device is improved.

A Micro-LED chip structure for enhancing luminous efficiency disclosed by the present invention comprises a driving backboard and a display module, the driving backboard and the display module are combined together in a bonding mode and then are electrically connected through an anode contact, the display module comprises an inverted trapezoidal pixel luminous tabletop, and the inverted trapezoidal pixel luminous tabletop is electrically connected with the driving backboard. The top light emitting area is increased through the inverted trapezoidal table-board structure, total internal reflection is reduced, and light escape is facilitated; a double-layer inorganic film clamping high-reflection metal structure is deposited on the side wall of the table top, the light emitting angle is reduced, light escape is enhanced, and meanwhile optical crosstalk isolation is achieved; a double-layer micro-lens structure is arranged at the top of the table top, the refractive index of an inner layer material, the refractive index of an outer layer material and the refractive index of air are decreased progressively while light rays are converged, light reflection is reduced, and therefore the transmissivity of the light rays emitted by the micro-lenses can be improved, and the light emitting efficiency of the Micro-LED structure is improved.

This invention relates to a method for fabricating a light-emitting diode (LED), comprising the following steps: sequentially depositing a bottom electrode, a light-emitting layer, an electron transport layer, and a top electrode stacked in the thickness direction on one side surface of a substrate, wherein the electron transport layer is made of ZnO or ZnMgO, and the top electrode is made of Al; coating the surface of the top electrode with an organic acid treatment agent, and thermally annealing to allow the material of the top electrode to penetrate into the material of the electron transport layer and react with the material of the electron transport layer to form an electron transport layer doped with the material of the top electrode. This invention can effectively reduce the energy level barrier between the light-emitting layer and the electron transport layer, enhance the electron injection performance of the LED, and improve the device performance of the LED.

The utility model discloses a high-luminous-efficiency flip LED (light-emitting diode), which comprises a substrate. According to the utility model, the flip chip is wedged in the mounting groove through the positioning groove and the positioning block, the light-emitting diode body is wedged in the wedging groove, and the substrate is clamped with the clamping block through the convex block and the second groove, so that the flip chip of the light-emitting diode body can be packaged in the through groove more stably and firmly; the light-emitting diodes irradiate towards the lower end through the through grooves, the reflecting pieces are fixedly installed on the inner sides of the through grooves, the reflecting pieces have the effect of reflecting light, the illumination intensity is improved, and the illumination efficiency and intensity of the light-emitting diode chips are improved by inversely installing the light-emitting diode chips and arranging the light intensifying structures in the light-emitting diode chips. And air in the shell circulates through the arranged heat dissipation holes, so that the heat dissipation effect of the equipment is improved.

The invention relates to the technical field of luminescent materials, and discloses a superfine rare earth doped divalent metal phosphate luminescent material, a manufacturing method and a luminescent device.The manufacturing method comprises the following steps that S1, an Eu < 3 + > doped zinc barium phosphate luminescent material is prepared and ground into luminescent particles; s2, preparing aluminum sol; s3, the pretreated luminescent material powder is slowly added into the aluminum sol, so that sol particles are uniformly adsorbed on the surface of the luminescent material to form composite particles of an Al2O3 coating layer; s4, continuously stirring or standing to enable the sol layer wrapping the surface of the luminescent material to be further subjected to hydrolytic polycondensation reaction to form a wet gel layer; and S5, drying the wet gel layer, and carrying out low-temperature heat treatment on the wet gel layer in a muffle furnace to form discontinuous pores. By forming the discontinuous pore structure between the base core and the shell, the vibration resistance of the luminescent material is enhanced, and the divergence angle is widened, so that the service life of the luminescent material is prolonged, and the application range of the luminescent material is widened.

Disclosed are a complex phase fluorescent ceramic and a preparation method therefor. The general chemical formula of the complex phase fluorescent ceramic is Ca1-xMnxO-(Re1-yCey)3Al5O12, 0.04≤x≤0.08, 0<y<0.01, Re3+ being one of Lu3+, Y3+ or Gd3+, and the mass ratio of Ca1-xMnxO to (Re1-yCey)3Al5O12 being 10-25:75-90. First, Ca1-xMnxO powder is prepared by a high-temperature solid-phase method; the obtained powder is mixed with (Re1-yCey)3Al5O12 raw material powder, and Ca1-xMnxO-(Re1-yCey)3Al5O12 multi-phase fluorescent ceramic is produced using a solid-state reaction sintering method. Since CaO:Mn is encapsulated within the (Re1-yCey)3Al5O12 ceramic, the problem of CaO easily absorbing moisture can be effectively avoided. Under excitation from a 440-460 nm blue laser, the complex phase fluorescent ceramic of the present invention simultaneously emits yellow-green Ce3+ fluorescence, with a dominant wavelength of 510-565 nm, and orange Mn2+ fluorescence, with a dominant wavelength of 600-630 nm. The ceramic exhibits thermal conductivity as high as 14-20 Wm-1K-1 at room temperature. When the blue laser pumping density is 50-80 W / mm2, the complex phase fluorescent ceramic exhibits a relative light conversion efficiency of 99%-99.8% of the initial efficiency and a color rendering index of 80-95, achieving enhanced luminescence stability and color quality under high pump power density excitation.

The invention discloses Eu < 3 + >-doped gallium aluminate red light-emitting glass as well as a preparation method and application thereof, and relates to the technical field of light-emitting materials. The luminescent glass is prepared by adopting a melting-cooling method, and the preparation method comprises the following steps: weighing SiO2, B2O3, Na2O and Lu3AlGa3. 93O12. 0.07 Eu < 3 + > raw materials according to a ratio, grinding, mixing, melting at a high temperature to form a uniform glass melt, and cooling and molding to obtain the luminescent glass. The luminescent glass can stably emit light under the excitation of ultraviolet light and blue light with the wave band of 200-480 nm, has the characteristic of wide excitation range, and can be well matched with near ultraviolet or commercial blue light LED chips. Under excitation of 395 nm blue light, the luminescent glass emits red light mainly with the wavelength of 593 nm and 610 nm, and shows good color purity and color rendering performance along with 709 nm near-infrared emission components. Furthermore, the luminescent glass can still keep stable red light emission intensity under a high-temperature condition, presents a luminescent enhancement trend in a heating process, and shows good luminescent thermal stability. The luminescent glass is suitable for high-power solid-state illumination and related high-temperature photoelectric application fields.

Aspects of the disclosure relates to articles, compositions, and systems for several optoelectronic applications. In some embodiments, the disclosure relates to the metal organic frameworks (MOF). The MOFs comprise a plurality of metal clusters and a plurality of ligands that are coordinated with the plurality of metal clusters. Some aspects of the disclosure relate to the luminescent MOFs and the various synthetic methods for their preparation. Some aspects also disclose one or more mechanisms unveiled by luminescent MOFs for various OLED applications. In some embodiments, the disclosure relates to the lanthanide-based metal organic frameworks for OLED applications. Some aspects of the disclosure focus on the versatile coordination chemistry shown by the lanthanides along with the structural tunability of MOFs, thereby resulting in exceptional luminescence, high thermal stability and tuneable electronic properties. In some embodiments, the disclosure relates to the enhancement of the luminescent behaviour by the utilization of dual-based lanthanide metal-organic frameworks. Lastly, in some embodiments, the disclosure relates to the zirconium-based and zinc-based MOFs due to their stability and tuneable luminescence behaviour. Thus, the lanthanide-based MOFs play an important role in shaping the future of advanced photonic and optoelectronic devices due to their outstanding characteristic properties and their ability to integrate multiple functionalities within a single framework.

The invention belongs to the technical field of material science, and relates to high-pressure induced emission enhanced multifunctional integrated fluorescent powder and a preparation method thereof, the expression is K3RESi2O7: xCe, RE = Y, Sc or Gd, and x = 0.5-15 at%. The luminous intensity of the material is remarkably enhanced under the high pressure of dozens of GPa, the functions of multi-mode emission or stimulus response discoloration and the like are combined, and multifunctional integration is achieved in single fluorescent powder.

The invention relates to the technical field of functional luminescent materials, in particular to a multi-color fluorescence conversion material based on a single luminophore as well as a preparation method and application of the multi-color fluorescence conversion material. The maximum emission wavelength change of a multi-color fluorescence conversion material based on a single luminophore under external stimulation is difficult to exceed 50nm, so that the signal recognition degree is easy to be insufficient. Aiming at the technical problems, the invention provides the multi-color fluorescence conversion material based on the single luminophore, a rigid conjugated skeleton is constructed through thioamide cyclization, the problems of energy transfer failure, component phase separation and the like in a traditional multi-component system are avoided, the maximum emission wavelength change reaches up to 150 nm or above under the stimulation of mechanical stress or an acid solution, and the fluorescence conversion material has the advantages of high fluorescence conversion efficiency, high fluorescence conversion efficiency and the like. Therefore, the method can be applied to the fields of high-end anti-counterfeiting, multi-dimensional information encryption and the like with high requirements on high signal-to-noise ratio and multi-level coding.

The application belongs to the field of biosensing detection, and relates to a preparation method of an electrochemiluminescence aptamer sensor for detecting Cd 2+ and application thereof. The application first prepares two materials of PTCA-COF and AuNCs, and modifies the two materials to the surface of a treated glassy carbon electrode in a layer-by-layer manner. Meanwhile, a specific recognition element aptamer for Cd 2+ is introduced, and an electrochemiluminescence aptamer sensor based on PTCA-COF / AuNCs is constructed based on the quenching effect of Fc connected to the aptamer on the electrochemiluminescence signal. The electrochemiluminescence aptamer sensor takes PTCA-COF as a base material and enhances the electrochemiluminescence signal of the luminescent body AuNCs. The constructed sensor has excellent detection and analysis performance on the target Cd 2+ , and has a linear range of 1.0*10 ‑12 -5.0*10 ‑9 M, a detection limit of 6.6*10 ‑13 M, and advantages of high sensitivity, selectivity and reliability.

A light emitting device includes: a first electrode layer, a first dielectric layer, a first luminescent layer, a second luminescent layer, a second dielectric layer and a second electrode layer that are arranged sequentially in stack; a source electrode and a drain electrode, wherein the source electrode and the drain electrode are arranged in a same layer, and are both located between the first luminescent layer and the second luminescent layer; and an insulating layer provided in the same layer as the source electrode and the drain electrode, and located between the source electrode and the drain electrode. By controlling the two electrode layers separately, the two luminescent layers may separately and independently emit light. By providing different materials of the luminescent layers, the effect of light emission of multiple mixed colors or the effect of an increased light intensity may be realized.

The present invention belongs to the technical field of aggregation-induced enhanced luminescent materials and aggregation-induced luminescent materials, and discloses a diphenyl ether derivative that specifically recognizes tryptophan, and a preparation method and application thereof. Three compounds are successfully prepared by the Suzuki coupling method, and are separated and purified by column chromatography. Among the diphenyl ether derivatives obtained by the present invention, NDPO and TDPO have excellent AIE effects, and SDPO has excellent AEE effects. The luminescence intensity can be increased by 29 times, 4 times and 34 times, respectively. The appropriate measuring solvent for the compound is determined by the solvation effect. The compounds SDPO and TDPO can be used as fluorescent probes to have efficient and specific recognition of tryptophan.

We provide a technology to control the negative thermal quenching effect in a specific temperature range in a single-layer MoS2 / bulk InSe heterojunction structure and selectively enhance the luminescence properties. [Solution] We developed a structure that incorporates an electron-phonon coupling-enhancing intermediate layer (a 0.5-nm-thick Al2O3 layer) and a surface treatment layer (a selenium-evaporated layer) between a single-layer MoS2 and bulk γ-InSe, and is equipped with a temperature control mechanism that combines a microheater and a cryogenic cooling device. This structure exhibits negative thermal quenching in the temperature range of 30 to 80 K, and the luminescence intensity increases with increasing temperature. The temperature coefficient is improved to 0.7% / K, and the temperature response of the luminescence intensity is more than twice that of conventional structures. This will enable the realization of new devices such as highly sensitive temperature sensors with a temperature resolution of less than 0.05 K and optical switches with a response time of less than 10 ms.