94 results about "Enhanced luminescence" patented technology

A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.

The invention provides a display device, a display panel thereof, and a transparent display panel. A first sub-pixel of the transparent display panel is arranged to comprise a light-transmitting area and a non-light-transmitting area, wherein the non-light-transmitting area is provided with a first light reflecting anode, a first light-emitting structure layer and a first cathode in a stacked mode, and the light-transmitting area completely wraps the non-light-transmitting area, or the non-light-transmitting area completely wraps the light-transmitting area. The light emitted by the first light-emitting structure layer can be reflected back and forth between the first light-reflecting anode and the first cathode for multiple times to form a microcavity effect, so that the light-emitting efficiency is enhanced, the frequency spectrum is narrowed, and the display quality of the transparent display panel is improved; when the full screen displays, the color coordinates of the light-transmitting display area and the non-light-transmitting display area are basically consistent, and deviation is avoided. The non-light-transmitting area is completely wrapped by the light-transmitting area, or the non-light-transmitting area is completely wrapped by the light-transmitting area, so that light emitted by one first sub-pixel can be uniformly diffused to all pixels around, the color coordinate offset is reduced, and the color rendering consistency under different visual angles is improved.

The invention discloses a method for preparing silica / silver nuclear shell structure granules by using polyvinyl pyrrolidone (PVP) in an assistant way. An adopted polyvinyl pyrrolidone assistant nucleation-regrowing two-step growth process comprises the following steps of: (1) preparing submicron silica spheres with surfaces absorbing nano silver granules; (2) dispersing the submicron silica spheres obtained in the step (1) in a polyvinyl pyrrolidone (PVP) water solution, and reducing silver nitrate by using formaldehyde under the catalysis of ammonia water; and (3) centrifugally cleaning reaction liquid obtained in the step (2), and then dispersing into ethanol or water to obtain a colloidal solution of the silica / silver nuclear shell structure granules. The method has the advantages of inexpensive and easily obtainable used drugs, simple and controllable process, good product monodispersity and uniform dimension, can obtain the nuclear shell structure granules with different opticaldelustering peak positions by regulating the thickness of a silver layer, and can be used for photonic crystals, biological detection, surface-enhanced Raman scattering, surface plasmons enhanced luminescence, and the like.

The invention provides a novel quantum well barrier layer LED epitaxial growth method and an LED epitaxial layer. The method sequentially comprises steps of processing a substrate, growing a low-temperature buffer GaN layer, growing a non-doped GaN layer, growing an n-type AlGaN layer, growing an n-type GaN layer, growing an active layer MQW, growing a P-type AlGaN layer, growing a P-type GaN layer and growing a p-type contact layer. the AlGaN thin layer is grown in a penetrating mode in the middle of the traditional active layer GaN barrier layer, the limiting and expanding ability of the light-emitting layer on electron can be enhanced, the ability of the quantum well to bond electron can be improved, the radiative recombination rate of a hole and electron in the potential well is obviously improved, the internal quantum efficiency is enhanced, and photoelectric properties of the LED device are improved.

The invention discloses a dual-enhanced chemiluminescent immunoassay method based on metal enhanced luminescence and nano particle labelled amplification. According to the dual-enhanced chemiluminescent immunoassay method based on metal enhanced luminescence and nano particle labelled amplification, metal nano particles replace conventional polystyrene nano microspheres, and luminescence substances are lebelled on the surface of an isolation layer spaced from the surfaces of the metal nano particles by 5-20nm; chemiluminescence of luminescence substances on sensitized metal nano particles is coupled to plasma waves on the surfaces of the metal nano particles; after resonance is generated, the chemiluminescence is emitted in the form of relatively high light intensity and relatively high attenuation speed. On the basis of a conventional chemiluminescence immunoassay technology, a metal enhanced luminescence technology and a nano particle labelled amplification technology are organically integrated; therefore, the dual-enhanced chemiluminescent immunoassay method has the advantages of high sensitivity, high detection speed and the like.

The invention relates to a GaN-based LED, which comprises a substrate, an epitaxial layer, a current extension layer and a P electrode, wherein the substrate is provided with a front surface and a back surface; the epitaxial layer is formed on the front surface of the substrate and comprises a P-type layer, a light-emitting region and an N-type layer from top to bottom in sequence; the current extension layer is formed on the P-type layer; and the P electrode is formed on the current extension layer. The GaN-based LED is characterized by further comprising a first reflecting layer and a second reflecting layer, wherein the first reflecting layer is positioned between the current extension layer and the epitaxial layer and is zonally distributed on a marginal area of the epitaxial layer; and the second reflecting layer is positioned on the back surface of the substrate. According to the invention, the zonal or annular first reflecting layer is arranged on the marginal area of the surface of the LED epitaxial layer, the probability of taking light from the side surface of the LED can be enhanced, namely, the proportion of light emitted from the light-emitting layer, which is emergent to the upper side to light emitted from the light-emitting layer, which is emergent to the side surface, is controlled, therefore the emergent light distribution uniformity of a chip is adjusted, and the nonuniform heat-radiation phenomenon is improved.

The invention relates to a light-splitting spectrum greenhouse film which comprises an inner film, a middle film and an outer film, wherein the master batch of the outer film comprises 2.8-3.4 parts of optical stabilizer, 0.8-1.1 part sof antioxidant, 0.8-1.2 parts of polyethylene wax, 0.8-1.2 parts of light-splitting assistant and 48-57 parts of polyethylene-vinyl acetate copolymer; the light-splitting assistant is the mixture of La<3+>, Y<3+> and Gd3<+>; the ratio by weight of the rare earth ions La<3+>, Y<3+> and Gd<3+> is (4-5):(8-9):(5-6); the ingredients comprise EVA (ethylene-vinyl acetate copolymer), LDPE (low-density polyethylene) and LLDPE (linear low density polyethylene); the ratio of parts by weight of the EVA, LDPE and LLDPE of the outer film and the master batch is (23-27):(23-27):(73-77):(11-17); the Eu<3+> ions in the rare earth assistant are partly displaced by non-fluorescent rare ions La<3+>, Y<3+> and Gd<3+> to form a heteronuclear multinuclear coordination compound, so as to strengthen the luminous intensity and overcome acute peaks; the half-width of the emission spectrum is 70nm; the excitation wavelength of the light-splitting spectrum greenhouse film is 290-390nm, the maximum wavelength is 332nm, and the emission spectrum is between 580-660nm; ultraviolet lights in solar radiation can be absorbed and transformed into red orange lights with large emission brightness and good colour purity; and the light conversion rate reaches 98%.

The invention belongs to the field of a rare earth-polymer composite luminescent material, and specifically relates to a luminescent material of naphthoic acid functionalized polymer and rare earth complex and a preparation method of the luminescent material. In the preparation method, a naphthalene acid ligand with coordination and sensitization dual-function roles on rare earth ions is introduced into a polymer side group; and the ligand not only can form stable polymer-rare earth complex together with the rare earth ions, but also has a large conjugate rigid plane, can greatly enhance energy transfer action of the polymer ligand on the rare earth ions, and enhances the luminescence property. The method disclosed by the invention not only is easy to achieve, but also solves the problems that the rare earth complex in the prior art has dispersion inequality and poor polymer substrate performance.

The invention discloses thallium-doped cesium iodide composite film and a preparation method thereof. The composite film is formed by sequentially coating a copper film layer, a thallium-doped cesium iodide film layer and a moistureproof protecting film layer on a base material from the upper part to the lower part; the preparation of the composite film can adopt the existing film coating technology to sequentially coating the copper film layer, the thallium-doped cesium iodide film layer and the moisture protecting film layer on the base material. Research shows that the composite film has the advantages that as a metal Cu film and a CsI:Tl film have efficient metal plasma enhanced luminescence effect, compared with a film, without an added metal Cu film layer, the luminescent intensity of the composite film is furthest increased by more than 85 times in a 400 to 450 nm blue band, and the composite film has strong blue-light emitting feature, and is expected to be applied to photoelectron fields, such as LED and the like.

The present invention discloses one kind of multiple quantum well blue light GaN-base LED. The multiple quantum well structure of the LED includes: p-type doped AlGaN layer, n-type doped AlGaN layer, and N quantum wells comprising un-doped GaN layer and un-doped InGaN between the two A1GaN layers, as well as isolating un-doped GaN layer between the P-type doped A1GaN layer and the N quantum wells and isolating un-doped GaN layer between the n-type doped A1GaN layer and the N quantum wells. Regulating the thickness of the isolating un-doped GaN layers can regulate the position of p-n junction to the multiple quantum well region effectively and raise the light emitting strengt of the LED effectively.

A photoluminescent thermoplastic multi-component fiber comprising a pigmented component and processing enhanced luminescence and mechanical properties. Most suitably, the pigmented component comprises between 5% and 30% by weight of photoluminescent pigment and the pigmented component is between 20% and 50% by weight of the multi-component fiber. The multi-component fiber can be formed from either POY or FDY, and the multi-component fiber can have many different cross section shapes including sheath / core. These single component or multi-component fibers can be made into a variety of fabrics. Additionally, single component or multi-component fibers can also be formed into single or multi-component meltblown and spunbonded fabrics.

The invention is directed to a resolution-enhanced luminescence microscopy method in which a sample is excited to the emission of luminescence radiation through irradiation by excitation radiation, and an image of the luminescing sample is acquired. A first partial volume of the sample is irradiated by a first laser radiation field of the excitation radiation, and a second partial volume of the sample is irradiated by a second laser radiation field of the excitation radiation. The first partial volume of the sample and the second partial volume of the sample overlap one another partially but not completely. Only the first laser radiation field is modulated with a first frequency, and luminescence radiation is detected from the first partial volume of the sample with modulation filtering so that luminescence radiation from the second partial volume of the sample is suppressed.

There is provided a light-emitting device with enhanced luminescence efficiency, which simultaneously exhibits excitation enhancement and emission enhancement of a light-emitting material by controlling two or multiple surface plasmon resonance bands of anisotropic metal nanoparticles to be formed in a near ultraviolet light range and a visible light range and optimizing overlapping of a wavelength of a near ultraviolet or blue light source with an absorption wavelength and an emission wavelength of the light-emitting material. There is also provided a light-emitting device with improved color gamut and luminance, which simultaneously exhibit emission enhancement of different types of light-emitting materials by controlling two or multiple surfaces plasmon resonance bands of anisotropic metal nanoparticles to be overlapped with absorption and emission wavelengths of two or more light-emitting materials having different emission wavelengths from one another.

The invention is directed to a resolution-enhanced luminescence microscopy method in which a sample is excited to the emission of luminescence radiation through irradiation by excitation radiation, and an image of the luminescing sample is acquired. A first partial volume of the sample is irradiated by a first laser radiation field of the excitation radiation, and a second partial volume of the sample is irradiated by a second laser radiation field of the excitation radiation. The first partial volume of the sample and the second partial volume of the sample overlap one another partially but not completely. Only the first laser radiation field is modulated with a first frequency, and luminescence radiation is detected from the first partial volume of the sample with modulation filtering so that luminescence radiation from the second partial volume of the sample is suppressed.

A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.

The invention relates to a manufacturing method of a thin film electroluminescence device with doped semiconductor quantum dots being cladded with silica gel. The thin film electroluminescence device comprises an ITO (Indium Tin Oxide) conductive glass layer, a first insulating layer, a light emitting layer, a second insulating layer and a metal Al electrode which are arranged in sequence. The light emitting layer is formed by cladding doped semiconductor quantum dots with SiO2 gel; because the light emitting layer is prepared by cladding the doped semiconductor quantum dots with the silica gel, the compact degree of the light emitting layer can be improved, the breakdown resistance capability of the light emitting layer is effectively enhanced, the service life of the thin film electroluminescence device is prolonged, and the light emitting efficiency is improved. Meanwhile, in the thin film electroluminescence device of which the light emitting layer is prepared by cladding the doped semiconductor quantum dots with the silica gel, the thickness of the light emitting layer can be controlled relatively easily. Meanwhile, the manufacturing method disclosed by the invention can realize thin film electroluminescence devices with different light emitting intensities. The invention further provides the manufacturing method of the thin film electroluminescence device.

The invention provides a red light enhanced core-shell upconversion luminescent nano-carrier and a preparation method therefor. The material has the chemical expression of NaGdF4:Yb,Er,Mn@NaGdF4:Yb@gel, wherein @ represents coating, and gel represents gelatin. The material provided by the invention is technically characterized in that homogeneous and monodisperse nanocrystals are produced by adopting a high-temperature pyrolysis method, which is environment-friendly and is easy and feasible in operation, and hydrophobic surfaces of nanoparticles are coated with gelatin by adopting a self-assembly method, so as to form NaGdF4:Yb,Er,Mn@NaGdF4:Yb@gel, of which the surface is hydrophilic and has a large number of active groups. The nano composite material prepared by the scheme has a red light enhanced luminescence property, maintains relatively strong luminescence total intensity and has a hydrophilic surface with a large number of active groups. The nano-carrier has enhanced red light emission and relatively strong fluorescence intensity and meanwhile has a hydrophilic active surface, thereby being capable of serving as an excellent photosensitizer carrier.

Described is a method for the high spatial resolution luminescence microscopy of a sample which is marked with marking molecules which can be activated by way of a switch-over signal such that only then can they be stimulated to emit luminescent radiation, wherein the method has the following steps a) introducing the switch-over signal onto the sample such that only a partial amount of the marking molecules present in the sample are activated, wherein, partial regions exist in the sample, in which partial regions only exactly one molecule, which is activated by the switch-over signal, is located inside a volume which is delimited by a diffraction-limited maximum resolution of a detection of luminescent radiation, b) stimulating the activated molecules to emit luminescent radiation, c) detecting the luminescent radiation with diffraction-limited resolution and d) generating image data from the luminescent radiation recorded in step c), wherein the marking molecules, which emit the geometric locations of the luminescent radiation, indicate with a spatial resolution which is increased to above the diffraction limit, wherein e) the detection of the luminescent radiation in step c) or the generation of the image data in step d) comprises a non-linear increase, which prefers higher intensities, of recorded luminescent radiation in order to enhance the spatial resolution to above the diffraction-limited resolution.

The invention discloses a rare-earth carbon nanoparticle, a preparation method of the rare-earth carbon nanoparticle and application for determining a pH value based on a fluorescence color scale. Therare-earth carbon nanoparticle disclosed by the invention is a fluorescent nanoparticle formed by carrying out a one-pot hydrothermal reaction among rare-earth europium ion, terbium ion as well as 2,6-dipicolinic acid and polyethylene glycol 400. The fluorescence color scale principle of the rare-earth ions is changed to indicate the pH value by utilizing the enhanced luminescence effect of carbon dots and protonation of the 2,6-dipicolinic acid. The rare-earth carbon nanoparticle disclosed by the invention can give out light to indicate the pH value in the aqueous solution and / or cells, hasexcellent fluorescence in the aqueous solution, high pH determination sensitivity and fast pH response, and have advantages to determination of the pH value of a biological sample with excellent fluorescence background. Compared with the general visual colorimetry according to the fluorescence color scale, the method for determining the pH value based on the fluorescence color scale is accurate.

The invention provides a stable red fluorescent material, its preparation method and a method for enhancing luminous efficiency. The stable red fluorescent material is a novel borate red fluorescent material used for white light LEDs, the chemical composition of the stable red fluorescent material is Na3Ca1-2xB5O10 : xEu<3+>, xM<+>, wherein the Na3Ca1-2xB5O10 is taken as a matrix, Eu<3+> is takenas a doped rare earth ion, M<+> is a charge compensation ion and is one or more of alkali metal ions Li<+>, Na<+>, K<+>, wherein 0.05<=x<=0.3. According to the invention, the borate red fluorescent material Na3Ca1-2xB5O10: xEu<3+>, xM<+> is synthesized by a two-step calcining method, the prepared borate red fluorescent material is capable of being excited by purple light LEDs or blue light LEDs of 200 to 470 nm, and the stable red light with high strengths ranged from 580 to 630 nm is emitted. The borate red fluorescent material is used for white light LEDs excited by blue light, ultraviolet light or near ultraviolet light.

Metal enhanced luminescence using alloy nanoparticles offers additional degrees of freedom for tuning their optical properties by altering atomic composition and atomic arrangement when compared to pure metal nanoparticles such as gold and silver. Surface plasmon resonance wavelengths of silver-copper nanoparticles were tuned in the visible and near infrared region by changing annealing temperature. Strong emission enhancement of luminophores at the vicinity of the Ag—Cu nanoparticles was shown when the SPR spectrum was tuned to produce maximum spectral overlap. As the SPR spectrum can be easily tailored, this platform can be effectively used to enhance luminescence of different luminophores.

The invention discloses a QLED (quantum dot light emitting diode) and a preparation method thereof. The preparation method comprises the following steps: A, sequentially depositing a hole injection layer and a hole transmission layer on the surface of a substrate; B, depositing a quantum dot light emitting layer on the surface of the hole transmission layer; C, sequentially depositing an electron transmission layer and an electron injection layer on the surface of the quantum dot light emitting layer; and D, manufacturing an anode on the substrate on which various functional layers are deposited, wherein the anode comprises an interface modification layer for amplifying functions. According to the preparation method, the interface modification layer is increased in the anode, so that the work function of the electrode is increased, the injection barrier is increased, the electron hole can be well balanced in the quantum dot light emitting layer, the effective recombination probability can be improved, and the QLED light emitting performance can be enhanced.

The invention discloses a method for improving the luminous intensity of light-cumulating luminous slurry. In the method, a reflecting layer and a substrate are adopted to reflect light emitted by a luminous material again so as to improve the luminous intensity. The method comprises the following operating steps: 1, printing prepared TiO2 slurry on a substrate by a 100 to 150 mesh silk screen and drying the substrate at 90 to 130 DEG C; 2, printing glass microsphere reflecting layer slurry onto the dried substrate printed with the TiO2 by using a 100 to 120 mesh silk screen, and after the printing is finished, drying the substrate at 90 to 130 DEG C; 3, finally, on the basis of the reflecting layer, printing the luminous slurry by using a 80 to 120 mesh silk screen, and after the printing is finished, drying the substrate at 110 to 150 DEG C. When the method of the invention is used, the luminous intensity and efficiency of long afterglow luminous slurry are improved greatly.

The present invention makes possible video expressions with increased feeling of brightness and increased contrast feeling and to be able to prevent the feeling of brightness and the contrast feeling from becoming unnatural during execution of the multi display. This video display device comprises: a control portion (a signal processing portion (1); an area-active-control / luminance-stretch-portion (4)) that controls a displaying portion (8) and a backlight portion (6); and a display instruction detection portion (13a) that detects display instructions of first and second input video signals. The control portion stretches and increases the luminance of the backlight portion (6), and also controls a light emitting portion enhancement processing according to a result of the detection. In the light emitting portion enhancement processing, the display luminance of a light emitting portion is enhanced by producing a histogram by integrating number of pixels for a predetermined feature amount relating to the brightness of the input video signal, detecting an upper region of a predetermined range of the histogram as the light emitting portion, and reducing luminance of a video signal of non-light emitting portion except the light emitting portion of the input video signal.

An electroluminescence device having enhanced overall luminescence or brightness resulting from a plurality of luminescence groups arranged in a stacked configuration, such that the luminescence output from one luminescent group is caused to blend with the luminescent output from one or more additional luminescent groups to provide an improved luminescence output that enhances the intensity of the overall luminescence generated by the device as compared to a device with a single luminescent group, or electrode assembly containing such. In some aspects, the improvement or increase may be at least additive, and in some cases synergistic. The device can include a multi-layer diamond electroluminescence device configured to provide enhanced luminescence intensity, wherein the device comprises a plurality of operating pairs of electrode layers; at least one diamond-like carbon layer disposed between each of the operating pairs of electrode layers, and electrically coupled to an electrode layer within a respective pair of electrode layers; and at least one luminescent layer disposed between each of the operating pairs of electrode layers, and electrically coupled to the diamond-like carbon layer and the respective pair of electrode layers, such that upon receiving electrons from the diamond-like carbon layer the luminescent layer illuminates.

Provided herein are isolated polynucleotide encoding modified click beetle luciferase polypeptides that have enhanced luminescence and longer wavelength near-infrared signals. The disclosure also relates to near-infrared bioluminescence systems that include said modified click beetle luciferase polypeptides and novel luciferin derivatives, as well as methods of using said modified click beetle luciferase polypeptides and bioluminescence systems.

An improved method for the preparation of a dispersion of ZnS particles doped with copper is disclosed. The method comprises the step of performing a precipitation by mixing together a zinc salt, a sulfide, and a citrate or EDTA complex of copper ions, dissolved in several aqueous solutions. Enhanced luminescence is obtained.

There is provided a light-emitting device with enhanced luminescence efficiency, which simultaneously exhibits excitation enhancement and emission enhancement of a light-emitting material by controlling two or multiple surface plasmon resonance bands of anisotropic metal nanoparticles to be formed in a near ultraviolet light range and a visible light range and optimizing overlapping of a wavelength of a near ultraviolet or blue light source with an absorption wavelength and an emission wavelength of the light-emitting material. There is also provided a light-emitting device with improved color gamut and luminance, which simultaneously exhibit emission enhancement of different types of light-emitting materials by controlling two or multiple surfaces plasmon resonance bands of anisotropic metal nanoparticles to be overlapped with absorption and emission wavelengths of two or more light-emitting materials having different emission wavelengths from one another.

The invention discloses an LED epitaxial growth method, which sequentially comprises the steps of processing a substrate, growing a low-temperature nucleation layer GaN, growing a high-temperature GaNbuffer layer, growing an undoped u-GaN layer, growing an N2 and H2 mixed atmosphere low-temperature AlInGaN:Zn layer, growing an H2 atmosphere medium-temperature InGaN:Si layer, growing an N2 atmosphere high-temperature GaN:Mg layer, growing a light-emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer, growing a P-type GaN contact layer and cooling. Through introducing the structure of the N2 and H2 mixed atmosphere low-temperature AlInGaN:Zn layer, the H2 atmosphere medium-temperature InGaN:Si layer and the N2 atmosphere high-temperature GaN:Mg layer, the method disclosedby the invention improves the electron hole pairs in a light-emitting area of a quantum well, enhances the light-emitting radiation efficiency, improves the light-emitting efficiency of the LED and reduces the warpage of the epitaxial wafer.