Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

QLED (quantum dot light emitting diode) and preparation method thereof

A cathode and hole transport layer technology, applied in the field of quantum dot luminescence, can solve the problems such as the performance of QLED needs to be improved, and achieve the effect of increasing the effective recombination probability, enhancing the luminescence performance, and increasing the injection barrier

Inactive Publication Date: 2016-11-23
TCL CORPORATION
View PDF2 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a QLED and its preparation method, aiming to solve the problem that the performance of the existing QLED needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • QLED (quantum dot light emitting diode) and preparation method thereof
  • QLED (quantum dot light emitting diode) and preparation method thereof
  • QLED (quantum dot light emitting diode) and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The present invention provides a QLED and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0026] see figure 1 , figure 1 It is a flowchart of a preferred embodiment of a QLED preparation method of the present invention, as shown in the figure, which includes:

[0027] Step S1, sequentially depositing a hole injection layer and a hole transport layer on the surface of the substrate;

[0028] Step S2, depositing a quantum dot luminescent layer on the surface of the hole transport layer;

[0029] Step S3, sequentially depositing an electron transport layer and an electron injection layer on the surface of the quantum dot light-emitting layer;

[0030] Step S4 , makin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a QLED (quantum dot light emitting diode) and a preparation method thereof. The preparation method comprises the following steps: A, sequentially depositing a hole injection layer and a hole transmission layer on the surface of a substrate; B, depositing a quantum dot light emitting layer on the surface of the hole transmission layer; C, sequentially depositing an electron transmission layer and an electron injection layer on the surface of the quantum dot light emitting layer; and D, manufacturing an anode on the substrate on which various functional layers are deposited, wherein the anode comprises an interface modification layer for amplifying functions. According to the preparation method, the interface modification layer is increased in the anode, so that the work function of the electrode is increased, the injection barrier is increased, the electron hole can be well balanced in the quantum dot light emitting layer, the effective recombination probability can be improved, and the QLED light emitting performance can be enhanced.

Description

technical field [0001] The invention relates to the technical field of quantum dot light emission, in particular to a QLED and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have size-tunable optoelectronic properties and have been widely used in light-emitting diodes, solar cells, and bioluminescent labels. After more than 20 years of development of quantum dot synthesis technology, people have been able to synthesize various high-quality nanomaterials, and their photoluminescence efficiency can reach more than 85%. Because quantum dots have the characteristics of size-tunable luminescence, narrow luminescence linewidth, high photoluminescence efficiency and thermal stability, quantum dot light-emitting diodes (QLEDs) with quantum dots as the light-emitting layer are a promising next-generation display and Solid state lighting source. Quantum dot light-emitting diodes (QLEDs) have received extensive attention and research in the fie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/82H10K71/00
Inventor 刘佳
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com