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Zirconium-doped tin oxide transparent conductive film and preparation method thereof

A technology of transparent conductive film and tin oxide, which is applied in the direction of oxide conductors, cable/conductor manufacturing, conductive layers on insulating carriers, etc., can solve the problems of ITO application limitations, large band gap, low resistivity, etc., and achieve green The effect of environmental protection and non-toxic cost

Inactive Publication Date: 2019-05-07
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the transparent conductive film is mainly ITO (tin-doped indium trioxide), which has a large band gap and low resistivity.
Although ITO is widely used, there are insurmountable shortcomings such as high cost of raw materials, high deposition temperature, and poor stability in reducing atmospheres, which limit the further application of ITO.

Method used

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  • Zirconium-doped tin oxide transparent conductive film and preparation method thereof
  • Zirconium-doped tin oxide transparent conductive film and preparation method thereof
  • Zirconium-doped tin oxide transparent conductive film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A zirconium-doped tin oxide transparent conductive film, prepared by the following steps:

[0027] (1) With absolute ethanol as solvent, SnCl 2 2H 2 O is used as a solute, zirconium acetate solution (concentration is 0.3mol / L) is used as a dopant, and is prepared into a precursor solution, wherein SnCl 2 2H 2 The concentration of O in the precursor solution is 0.3mol / L, and the Zr:Sn atomic number ratio in the precursor solution is 1at%;

[0028] (2) The glass substrate is subjected to oxygen plasma treatment, the time of the plasma treatment is 15min, and the power ratio of the plasma treatment is 70%;

[0029] (3) Spin-coat the precursor solution prepared in step (1) on the substrate to prepare a film, and pre-cure and anneal the film. The spin-coating process is: first spin-coat at 500rpm for 6s, then spin-coat at 4000rpm 20s; the annealing process is: heating at 500°C for 1h.

Embodiment 2

[0031] A zirconium-doped tin oxide transparent conductive film, the preparation method of which is compared with Embodiment 1, the only difference is that the atomic number ratio of Zr:Sn in the precursor solution is 3 at%.

Embodiment 3

[0033] A zirconium-doped tin oxide transparent conductive film, the preparation method of which is compared with Embodiment 1, the only difference is that the atomic number ratio of Zr:Sn in the precursor solution is 5 at%.

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Abstract

The invention belongs to the technical field of electronic device material preparation, and discloses a zirconium-doped tin oxide transparent conductive film and a preparation method thereof. The method comprises the following steps of: (1) preparing a zirconium-doped tin oxide precursor solution; (2) performing plasma treatment on a clean glass substrate; (3) performing spin-coating on a plasma-treated glass substrate to prepare a zirconium-doped tin oxide film; and (4) performing pre-curing of the prepared film on a hot stage, and performing annealing. The zirconium-doped tin oxide transparent conductive film is high in transmittance, low in resistivity, simple in process and low in cost.

Description

technical field [0001] The invention belongs to the technical field of electronic device material preparation, and in particular relates to a zirconium-doped tin oxide transparent conductive film and a preparation method thereof. Background technique [0002] Transparent conductive films are widely used in various fields such as electronics, electricity, information, and optics. They have been used in electrodes of flat panel displays, anti-condensation heating films for window glass, energy-saving infrared reflective films, electrodes of solar cells, and solar collectors. Selective transmission film, etc. At present, the transparent conductive film is mainly ITO (tin-doped indium trioxide), which has a large band gap and low resistivity. Although ITO is widely used, there are insurmountable shortcomings such as high cost of raw materials, high deposition temperature, and poor stability in reducing atmospheres, which limit the further application of ITO. Therefore, it is v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14H01B13/00H01B1/08H01B1/02
Inventor 宁洪龙刘贤哲姚日晖张旭袁炜健张观广梁志豪梁宏富张啸尘彭俊彪
Owner SOUTH CHINA UNIV OF TECH
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