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Passivation method for back surface of antimony selenide thin film solar cell

A solar cell and processing method technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of small photoelectric current, low photoelectric conversion efficiency, low filling factor, etc., and achieves reduction of contact potential, passivation The treatment method is simple and easy Line and photoelectric conversion efficiency improvement effect

Active Publication Date: 2017-09-22
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the existing antimony selenide battery preparation technology and improvement requirements, the present invention provides a passivation treatment method for the back surface of the antimony selenide thin film solar cell, by using ErCl 3 Passivate the back surface of the aqueous solution to reduce the contact resistance of the back electrode, promote the collection of photogenerated carriers, increase the fill factor, improve the collection efficiency of the back electrode of the antimony selenide thin film solar cell, and then improve the photoelectric conversion of the cell Efficiency, thereby solving the technical problems of low photoelectric current, low fill factor and low photoelectric conversion efficiency in the prior art antimony selenide thin film cells

Method used

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  • Passivation method for back surface of antimony selenide thin film solar cell

Examples

Experimental program
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Effect test

Embodiment 1

[0031] (1) The antimony selenide thin film battery is placed on a hot stage with a temperature of 60°C;

[0032] (2) Then 0.5M ErCl 3 The aqueous solution is dripped onto the back surface of the antimony selenide battery, and made to cover the back surface, and allowed to stand for 30 minutes;

[0033] (3) The battery device is placed on a film coating machine, cleaned with deionized water, and dried;

[0034] (4) Electrodes were evaporated on the back side to obtain antimony selenide thin film solar cells, and the current-voltage test was carried out under standard sunlight.

Embodiment 2

[0036] (1) The antimony selenide thin film battery is placed on a hot stage with a temperature of 120°C;

[0037] (2) Then 0.2M ErCl 3 The aqueous solution was dripped onto the back surface of the antimony selenide battery, and made to cover the back surface, and stood for 20 minutes;

[0038] (3) The battery device is placed on a film coating machine, cleaned with deionized water, and dried;

[0039] (4) Electrodes were evaporated on the back side to obtain antimony selenide thin film solar cells, and the current-voltage test was carried out under standard sunlight.

Embodiment 3

[0041] (1) The antimony selenide thin film battery is placed on a hot stage with a temperature of 160°C;

[0042] (2) Then 0.05M ErCl 3 Drop the aqueous solution onto the back surface of the antimony selenide battery, and make it cover the back surface, and let it stand for 10 minutes;

[0043] (3) The battery device is placed on a film coating machine, cleaned with deionized water, and dried;

[0044] (4) Then the electrode was vapor-deposited on the back side to obtain the antimony selenide thin film solar cell, and the surface potential and the current-voltage test under standard sunlight were carried out on it.

[0045] The Kelvin probe potential mapping diagram is as follows figure 1 as shown, figure 1 (a) is the test result before treatment, figure 1 (b) is ErCl 3 The test results after the solution treatment, the results show that the potential of the antimony selenide surface becomes higher after treatment, thereby reducing the contact barrier between the antimony...

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Abstract

The invention discloses a method for treating the back surface of an antimony selenide thin film solar cell. The method comprises the steps of putting an antimony selenide thin film cell on a hot stage; then dripping an ErCl3 solution onto the back surface of the antimony selenide cell to cover the back surface, and standing the cell for a period of time; and finally, putting the cell on a coating machine, cleaning the cell with deionized water, and spin-drying the cell, thus obtaining an antimony selenide thin film solar cell having the back surface treated. The method can effectively reduce the contact resistance of a back electrode, promote the collection of photon-generated carriers, improve the fill factor and further improve the photoelectric conversion efficiency of the antimony selenide thin film solar cell. The method simply and effectively improves the back contact characteristic of the antimony selenide cell, thus improving the photoelectric conversion performance of the cell and providing a technical support for the development of thin film cells.

Description

technical field [0001] The invention relates to the technical field of photovoltaic device design and preparation, in particular to a passivation treatment method for the back surface of an antimony selenide thin-film solar cell, and belongs to the technical field of solar cells. Background technique [0002] Solar photovoltaic power generation belongs to the green power generation energy project that the state encourages the most. The "Thirteenth Five-Year" photovoltaic plan pointed out that it will continue to maintain rapid development, focusing on the development of high-efficiency, low-cost, lightweight, and highly industrially competitive solar cells. Recently, research on new thin-film solar cells that are green, non-toxic, simple in preparation process, low in cost and high in efficiency has become a hot topic. V-VI compound antimony selenide (Sb 2 Se 3 ) material has a suitable band gap (~1.17eV, close to silicon 1.12eV, theoretical single-section Sb 2 Se 3 The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1868Y02E10/50Y02P70/50
Inventor 唐江文西兴牛广达胡青松陈超李康华陈文浩
Owner HUAZHONG UNIV OF SCI & TECH
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