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Preparation method of flexible semiconductor device

A semiconductor and inorganic semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low yield and high production cost of flexible semiconductor devices, achieve important application value, and achieve the effect of mass production

Inactive Publication Date: 2016-02-24
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to limited process conditions and manufacturing capabilities, the manufacturing cost of flexible semiconductor devices is high and the output is low. In order to obtain large-scale practical applications of flexible semiconductor devices, it is necessary to develop low-cost mass production process technology.

Method used

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  • Preparation method of flexible semiconductor device
  • Preparation method of flexible semiconductor device
  • Preparation method of flexible semiconductor device

Examples

Experimental program
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Effect test

Embodiment 1

[0037] Such as figure 1 As shown, the present invention provides a method for manufacturing a flexible semiconductor device, including the following steps:

[0038] In step S01, an inorganic semiconductor substrate 100 is provided.

[0039] See Figure 2a In the present invention, the inorganic semiconductor substrate 100 can be used in an epitaxial growth process. The inorganic semiconductor substrate 100 is preferably a silicon substrate, a germanium substrate, a gallium arsenide substrate, a gallium nitride substrate or a III-V semiconductor substrate One of them. In this embodiment, the crystal orientation of the inorganic semiconductor substrate 100 is Silicon substrate.

[0040] In step S02, an inorganic semiconductor thin film 200 is grown on the inorganic semiconductor substrate 100 using a heteroepitaxial growth process.

[0041] Please keep reading Figure 2a In the present invention, the inorganic semiconductor thin film 200 can be selected from any heterogeneous semicond...

Embodiment 2

[0055] In order to make the lateral etching process in the present invention easier to implement, the present invention also provides a method for manufacturing a flexible semiconductor device, which specifically includes the following steps:

[0056] First, an inorganic semiconductor substrate 100 is provided, an isolation dielectric layer 300 is deposited on the inorganic semiconductor substrate 100, and the region to be prepared of the semiconductor device 400 is defined by photolithography and etching processes; then, a heteroepitaxial growth process is used in the semiconductor In the region to be prepared, an intermediate semiconductor layer (not shown in the figure) and an inorganic semiconductor thin film 200 are sequentially grown; next, a semiconductor device 400 based on the inorganic semiconductor thin film 200 is prepared; and then, photolithography and etching processes are used in the semiconductor device 400 A trench 500 is formed all around, and a bridge of a pres...

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PUM

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Abstract

The invention belongs to the field of semiconductor manufacture, and discloses a preparation method of a flexible semiconductor device. The method includes: firstly, an inorganic semiconductor film is grown on an inorganic semiconductor substrate, then a semiconductor device based on the inorganic semiconductor film and an isolation medium layer are prepared, a groove is then etched so that the bottom of the semiconductor device maintains suspended, and finally the semiconductor device is transferred to a flexible substrate via a PDMS seal technology. The method is completely compatible with the current mainstream microelectronics technology, and the performance of the device can be effectively guaranteed via the semiconductor device prepared based on inorganic semiconductor materials; besides, the method can be widely applied to the preparation of flexible semiconductor devices of different kinds, such as light emitting diodes (LED) or field effect transistors (FET), the method can even be directly applied to the realization of flexible circuits, batch production of flexible circuit chips can be realized via the integration of the flexible packaging process, and the application values are very important.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor manufacturing and relates to a method for preparing a flexible semiconductor device. Background technique [0002] In recent years, with the rapid development of flexible display technology and smart wearable products, flexible electronics has received more and more attention, and flexible semiconductor devices as the core components of flexible electronics have also received more and more extensive exploration and research . Organic semiconductor materials have always been the basic materials for the research of flexible semiconductor devices because of their better flexibility and lower process costs, such as organic light-emitting diodes (OLED), organic thin film transistors (OTFT), etc., but organic semiconductor materials are relatively low The carrier mobility greatly limits the improvement of device performance. At the same time, organic semiconductor materials are also extremely suscepti...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L33/00
CPCH01L29/66477H01L33/0054H01L33/0062
Inventor 郭奥胡少坚周伟
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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