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Method for integrating garnet film on silicon at low temperature based on transfer printing

A technology for integrating garnets and garnets, which is applied in the field of low-temperature integration of garnet films on silicon based on transfer printing, can solve the problems of high thermal budget and incompatibility with semiconductor processes, and achieve the effect of reducing the degree of corrosion and cracking.

Active Publication Date: 2019-01-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above problems or deficiencies, in order to solve the problem of high thermal budget in the preparation of existing garnet films and the incompatibility with semiconductor processes; the present invention provides a method for low-temperature integration of garnet films on silicon based on transfer printing

Method used

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  • Method for integrating garnet film on silicon at low temperature based on transfer printing
  • Method for integrating garnet film on silicon at low temperature based on transfer printing
  • Method for integrating garnet film on silicon at low temperature based on transfer printing

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Experimental program
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Embodiment

[0025] Step 1: Using chemical self-assembly method on SiO 2 PS spheres with a diameter of 1 μm are arranged in a hexagonal close-packed form on the / Si substrate.

[0026] Step 2: Place the hexagonal close-packed PS pellets in step 1 on a heating plate, heat the PS pellets at 104°C for 20s, and dry the PS pellets; then bombard the pellets in step 2 with oxygen plasma to make the pellets The diameter is reduced to 0.5 μm.

[0027] Step 3: Deposit a YIG film with a thickness of 80 nm at room temperature on the PS pellets finally prepared in Step 2 by pulsed laser deposition (PLD), with a target-base distance of 5.5 cm, a laser frequency of 10 Hz, and an oxygen partial pressure of 0.67 Pa.

[0028] Step 4: Use toluene, alcohol, and deionized water to ultrasonically clean the sample obtained in step 3 in order to remove the PS pellets, and the SiO 2 / Si substrate to obtain hole structure YIG film.

[0029] Step 5: Place the YIG film with a porous structure obtained in step 4 in...

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Abstract

The invention belongs to the field of integrated optics, and in particular relates to a method for integrating a garnet film on silicon at low temperature based on transfer printing. In the method provided by the invention, closely arranging PS globules at six corners of a SiO2 / Si substrate by using a chemical self-assembly method, the PS globules are bombarded by oxygen plasma to reduce the diameter, the magneto-optical garnet film is deposited on the PS globules that are bombarded by the oxygen plasma at room temperature by using a pulse laser deposition method, the PS globules are cleaned with methylbenzene to remove the PS globules and the garnet film on the PS globules, so that the garnet film with holes are reserved on the SiO2 / Si substrate, and finally the etching speed is greatly improved, and the HF corrosion degree of the garnet film is reduced. After etching is completed, the suspended garnet film is taken down by using a PDMS seal, and then printed on the silicon substrate,and thus the low-temperature integration of the garnet film on the silicon substrate is achieved.

Description

technical field [0001] The invention belongs to the field of integrated optics, in particular to a method for low-temperature integration of garnet films on silicon based on transfer printing. Background technique [0002] Magnetic non-reciprocal optical devices, such as optical isolators, are important devices to realize one-way transmission of light and avoid laser frequency and intensity noise. device. Commercial isolators work based on the Faraday rotation effect of bulk materials. The technology is very mature, but they are bulky and costly, and cannot be compatible with other semiconductor integrated optical devices. Therefore, the research on on-chip integrated magneto-optical isolation devices has become extremely important. Magneto-optical isolators use the nonreciprocity of magneto-optical materials to break the time-reversal symmetry of light propagation, and the properties of magneto-optical materials play a crucial role in the development of on-chip integrated...

Claims

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Application Information

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IPC IPC(8): G02F1/09C23C14/28C23C14/08
CPCC23C14/0005C23C14/08C23C14/28G02F1/093
Inventor 毕磊肖敏王会丽夏爽康同同邓龙江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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