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Electronic device based on SOI CMOS, preparation method and peeling method thereof

A technology of electronic devices and substrate substrates, which is applied in the field of preparation and SOICMOS-based electronic devices, can solve the problems of complex manufacturing process, difficult manufacturing, and low yield rate, so as to reduce manufacturing cost, reduce manufacturing process difficulty, and improve yield rate Effect

Active Publication Date: 2018-12-07
NO 24 RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the prior art, such electronic devices have the problems of complex manufacturing process, difficult manufacturing, high cost and low yield

Method used

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  • Electronic device based on SOI CMOS, preparation method and peeling method thereof
  • Electronic device based on SOI CMOS, preparation method and peeling method thereof
  • Electronic device based on SOI CMOS, preparation method and peeling method thereof

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Embodiment Construction

[0060] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0061] see Figure 1 to Figure 10. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides an electronic device based on an SOI CMOS, a preparation method and a peeling method thereof. The electronic device based on the SOI CMOS is provided with a plurality of peelingtroughs. The peeling troughs penetrate through the electronic device based on the SOI CMOS. Not only is manufacture of the electronic device based on the SOI CMOS facilitated, but also a stress in bending is reduced. Damage of the electronic device based on SOI CMOS is prevented. Through arranging the peeling troughs and arranging the peeling troughs which are trough to an embedded oxide layer, and performing corrosion processing on the embedded oxide layer, corrosion of the embedded oxide layer is realized; and furthermore the electronic device based on the SOI CMOS is disengaged from a substrate. The electronic device based on the SOI CMOS forms a suspended structure through supporting by a support. Manufacturing process difficulty and manufacturing cost are reduced. The electronic device is peeled to a target substrate through a PDMS stamp.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an electronic device based on SOI CMOS, a preparation method and a stripping method. Background technique [0002] With the development of semiconductor manufacturing technology, electronic devices capable of conforming to the three-dimensional (3D) topography of biological surfaces have unique physical properties and are therefore favored by academia and industry. First of all, such electronic devices have ultra-thin properties in physical structure, so that such electronic devices are flexible and even bendable, so they have great application prospects in the fields of wearable electronics and medical diagnosis; moreover, such electronic devices When the device is stimulated by the external stress field, it will undergo geometric deformation, and this geometric deformation will be coupled into the electrical transport characteristics of the electronic device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L27/06H01L21/84H01L21/683
CPCH01L21/6835H01L21/84H01L27/0688H01L27/1203
Inventor 张培健王鹏飞陈文锁袁浚朱坤峰陈仙徐代果
Owner NO 24 RES INST OF CETC
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