Electronic device based on SOI CMOS, preparation method and peeling method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NO 24 RES INST OF CETC
- Publication Date
- 2018-12-07
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Abstract
Description
technical field
[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an electronic device based on SOI CMOS, a preparation method and a stripping method. Background technique
[0002] With the development of semiconductor manufacturing technology, electronic devices capable of conforming to the three-dimensional (3D) topography of biological surfaces have unique physical properties and are therefore favored by academia and industry. First of all, such electronic devices have ultra-thin properties in physical structure, so that such electronic devices are flexible and even bendable, so they have great application prospects in the fields of wearable electronics and medical diagnosis; moreover, such electronic devices When the device is stimulated by the external stress field, it will undergo geometric deformation, and this geometric deformation will be coupled into the electrical transport characteristics of the electronic device...