Preparation method for flexible carbon-nanotube field effect transistor

Abstract

The invention discloses a preparation method for a flexible carbon-nanotube field effect transistor, and belongs to the field of semiconductor manufacture. A silicon substrate is provided, and carbon nanotubes are prepared on the silicon substrate; a field effect transistor taking the carbon nanotube as channel materials is prepared; trenches are formed in the periphery of the carbon-nanotube field effect transistor, and bridging of preset size is reserved in the adjacent end points of the trenches; the silicon substrate is etched horizontally, so that the bottom of the carbon-nanotube field effect transistor is suspended; and a PDMS stamping technology is used to transfer the carbon-nanotube field effect transistor to a flexible substrate to form the flexible carbon-nanotube field effect transistor. Mainstream preparation technologies of the high-performance carbon-nanotube transistor are combined, large-scale production of the flexible carbon-nanotube field effect transistors is realized by integrating the flexible packaging technology, and the market and application values of the method are high.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and relates to a method for preparing a flexible carbon nanotube field effect transistor. Background technique [0002] In recent years, with the rapid development of flexible display technology and smart wearable products, flexible electronics has received more and more attention, and research on flexible field effect transistors (Field Effect Transistor, FET) has gradually become a hot topic. The fabrication process of flexible transistors is mainly based on organic semiconductor materials, or low-temperature polysilicon process. Although organic semiconductor materials have good flexibility and low process cost, their low carrier mobility greatly limits the improvement of device performance. At the same time, organic semiconductor materials are also extremely vulnerable to oxygen and humidity. , which leads to serious problems in the reliability of the device. In addition...

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Problems solved by technology

However, due to limited process conditions and manufacturing capabilities, the preparation cost of flexible carbon nanotube field effect transistors is high and the output is low. In order to obtain large-scale practical applications of flexible carbon nanotube field effect transistors, it is necessary to develop low-cost mass production technology

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