The invention discloses a three-valued static random access memory cell realized by the utilization of a carbon nanotube field effect transistor. The three-valued static random access memory cell comprises a first CNFET tube, a second CNFET tube, a third CNFET tube, a fourth CNFET tube, a fifth CNFET tube, a sixth CNFET tube, a seventh CNFET tube, a eighth CNFET tube, a ninth CNFET tube, a tenth CNFET tube, a eleventh CNFET tube and a twelfth CNFET tube. The first CNFET tube, the second CNFET tube, the fourth CNFET tube, the fifth CNFET tube, the seventh CNFET tube, the ninth CNFET tube, the tenth CNFET tube and the eleventh CNFET tube are N-type CNFET tubes. The third CNFET tube, the sixth CNFET tube, the eighth CNFET tube and the twelfth CNFET tube are P-type CNFET tubes. The three-valued static random access memory cell has advantages of fast read-write speed, high stability of read data, small wiring area, low power consumption and large memory capacity.