10results about How to "Simple sample preparation" patented technology

The invention discloses a method for measuring the thickness of a battery pole piece, and belongs to the technical field of batteries. Comprising the following steps: pouring liquid resin glue into a container for the first time, and curing to form a first resin layer; placing a battery pole piece to be detected on the surface of the first resin layer in parallel, pouring the liquid resin sizing material into the container for the second time, and curing to form a second resin layer to obtain a resin sample; vertically cutting the sample along a direction vertical to the surface of the resin sample to obtain a section end of the to-be-detected pole piece; grinding, polishing and rectifying the tangent plane end until the error between the actual value and the theoretical value of the foil thickness is within a preset range to obtain a standard to-be-detected product; and measuring the thickness of the pole piece by adopting three-dimensional measuring equipment. The measuring method is convenient to operate, simple in sample preparation, short in measuring time, low in cost, high in measuring result accuracy and capable of measuring the single-face thickness of the pole piece.

The invention relates to the technical field of semiconductor manufacturing, in particular to a pore sample with large depth, and provides a method for observing a bottom structure by preparing the pore sample through a focused ion beam (FIB). According to the method, by means of filling special resin for ion thinning into pores, introducing an improved back-cutting technology and the like, the problems of pore structure deformation and large damage of focused ion beams to the interiors of the pores during sample preparation in the prior art are solved; the method has the technical effects that the stability of the bottom structure of the pore sample can be improved, and damage to the pore structure in the thinning process is avoided.

The invention belongs to the technical field of spectral analysis, and discloses a method and a device for correcting a rotating matrix effect of a surface-enhanced laser-induced breakdown spectroscopy technology. The method comprises the following steps: 1, preparing a sample by a standard addition method; step 2, performing Youden calibration and sample preparation; step 3, performing SENLIBS sample preparation and spectrum acquisition; respectively carrying out SENLIBS sample preparation and spectrum collection on the sample solutions obtained in the step 1 and the step 2 to obtain corresponding absolute spectrum intensities of the two layers to be analyzed; step 4, establishing a calibration curve of the SENLIBS technology assisted by the standard addition method; step 5, obtaining a constant error through Youden calibration; step 6, constant error correction is carried out; and calculating the element concentration in the corrected solution to be detected. According to the invention, the constant error introduced by converting the carrier from a liquid phase to a metal carrier can be corrected, and the quantitative analysis accuracy of the SENLIBS technology is improved.

The invention provides a method for measuring the water hardness of a seawater desalination project, which comprises the following steps: calibrating an electrode by using standard solutions with different calcium and magnesium ion concentrations to obtain standard curves in different concentration ranges, with potential values in the standard curves as ordinates and concentrations as abscissas; and inserting the calibrated water hardness composite electrode into a to-be-detected seawater desalination engineering water quality sample, and calculating the hardness concentration of the to-be-detected seawater desalination engineering water quality sample through the potential value. The hardness concentration of the water quality sample of the seawater desalination project to be measured is measured by using the water hardness composite electrode, so that the problem of hidden dangers in the aspects of safety, quality and environmental protection existing in measurement of the water quality hardness of the seawater desalination project by using an existing chrome black T method and an acid chrome blue K method is solved.

The invention provides a method, a system and a terminal for acquiring the rotation degree of a crystal face in an alloy material. The method comprises the following steps: acquiring two-dimensional synchrotron radiation diffraction data of a to-be-detected alloy material; carrying out integration on the two-dimensional synchrotron radiation diffraction data, including dividing multiple fan-shaped region integration and whole diffraction data integration, and respectively obtaining corresponding peak position-peak intensity curves; performing diffraction peak calibration on the peak position-peak intensity curve to obtain each corresponding diffraction peak; performing normalization processing on the peak area of each diffraction peak, and adding the diffraction peak areas after normalization processing in the same phase to obtain the sum of the normalized diffraction peak areas of the specific phase of each fan-shaped region of the alloy material to be detected at a certain moment; and comparing the sum of the normalized diffraction peak areas of the alloy material to be detected in each sector region at each moment to obtain quantitative expression of rotation of a certain phase crystal face in the alloy material to be detected at each moment. The method is high in precision, simple in sample preparation and nondestructive in measurement.

This invention provides a method, replica film, and application for directly detecting silicon nitride grain boundary phases. The method includes the following steps: S1, etching a polished silicon nitride ceramic sample with hydrofluoric acid solution; S2, replicating the etched polished surface with a first solvent and a cellulose acetate film to obtain a primary replica; S3, vacuum-depositing a carbon film onto the primary replica to obtain a secondary replica; S4, cutting and attaching the secondary replica film to low-temperature paraffin wax, then dissolving the cellulose acetate in a second solvent; S5, transferring the dissolved secondary replica film to a third solvent, and after the secondary replica film has fully expanded, retrieving it with a copper mesh, drying it, and observing it under an electron microscope. The method provided by this invention can separate the grain boundary phase from the silicon nitride main phase, obtaining the solid grain boundary phase while retaining the morphological outline of the silicon nitride main phase. This method is simple to operate, low in cost, and provides great convenience for studying the influence of grain boundary phases on the mechanical and optical properties of silicon nitride separately.

The invention discloses an X-ray fluorescence determination method for a glass fiber batch. The method comprises the following steps: manufacturing a sample piece to be detected, preparing a calibration sample, manufacturing a calibration sample piece, establishing a working curve of an X-ray fluorescence spectrometer for detecting the glass fiber batch, analyzing the sample piece to be detected, and calculating the mass percent of a glass fiber component. According to the method, a wavelength dispersion X-ray fluorescence spectrometer is adopted for determining the chemical components such as fluorine, boron, sulfur, carbon, silicon and aluminum and the COD content in the glass fiber batch with different formulas, operation is easy and convenient, the analysis speed is high, the measurement accuracy and precision are good, pollution of chemical waste liquid is greatly reduced, and the method is suitable for industrial production. The components of the glass fiber and the sulfur and chemical oxygen demand (COD) in the glass fiber batch are predicted in advance.

The invention discloses a high-sensitivity method for evaluating the absorption and precipitation of a POE (Polyolefin Elastomer) resin particle aid, which comprises the following steps: (a) a sample preparation stage: mixing POE resin particles with an aid, and curing to obtain test sample particles; (b) pretreatment: putting the test sample into a self-sealing bag, carrying out natural placement aging or accelerated aging for a period of time, and then taking out the test sample to obtain pretreated sample particles; (c) a test stage: respectively testing the characteristic relaxation time of the test sample and the pretreatment sample at 190 DEG C under the condition of a shear rate of 0.1 rad / s to 500 rad / s to obtain lambda0 and lambda1; the characteristic relaxation time change rate K is obtained through calculation, K = (lambda0-lambda1) / lambda0 * 100%, and the larger the K value is, the more serious the precipitation of the auxiliary agent is, and the poorer the absorption condition of the corresponding auxiliary agent is. The method not only can simply and effectively evaluate the precipitation performance of different assistants, but also can reflect the absorption condition of resin particles to the assistants from the side.

The invention provides a method for testing the cutting damage depth of III-V family single crystals, which is characterized by comprising the following steps: S1, cleaning the surface of a wafer, S2, measuring the initial thickness of the wafer, S3, pasting a protective film, S4, carrying out step-by-step corrosion to obtain a step table surface, S5, carrying out preferential corrosion liquid to enable the cutting damage to appear, S6, observing and testing the surface of the step of the wafer, and S7, testing the cutting damage depth of the III-V family single crystals. And obtaining the cutting damage depth of the III-V family single crystal. The method is high in test precision, can detect sub-damage defects which cannot be detected by an existing test method, is simple and time-saving in sample preparation and operation, and is high in test efficiency. By adopting the method disclosed by the invention, the damage caused by the cutting process of the III-V family single crystal can be quantitatively evaluated so as to guide the improvement of the cutting process, and meanwhile, quantitative guidance can be provided for the removal amount of the III-V family wafer surface treatment process.

The invention relates to the technical field of diaphragm testing, and provides a diaphragm through hole diameter testing method which comprises the following steps: preparing a diaphragm sample with a preset size; wetting the diaphragm sample to a saturated state through wetting liquid, and pressing the diaphragm sample into the sample groove; the diaphragm sample placed in the sample groove is tested through the lithium ion battery diaphragm aperture analyzer according to preset parameters, and the wetting test result of the diaphragm sample is obtained. According to the diaphragm through hole diameter testing method, high-value equipment such as a scanning electron microscope and a section polishing instrument does not need to be purchased, sample preparation is simple, the testing period is short, the labor hour and the testing cost are reduced, the pressure needed by testing is small, the testing precision is high, the good testing effect is achieved, and diaphragm research and development and production quality control are facilitated.