Self-aligned T-gate carbon nanotube field effect transistor devices and method for forming the same

Abstract

A method is provided for forming a self-aligned carbon nanotube (CNT) field effect transistor (FET). According to one feature, a self-aligned source-gate-drain (S-G-D) structure is formed that allows for the shrinking of the gate length to arbitrarily small values, thereby enabling ultra-high performance CNT FETs. In accordance with another feature, an improved design of the gate to possess a ''T''-shape, referred to as the ''T-Gate,'' thereby enabling a reduction in gate resistance and further providing an increased power gain. The self-aligned T-gate CNT FET is formed using simple fabrication steps to ensure a low cost, high yield process.

Description

[0001] This application claims the benefit of and priority to US Provisional Application Serial No. 60 / 952,966, filed July 31, 2007, the contents of which are incorporated herein by reference in their entirety. technical field [0002] The present invention relates to nanotube (NT) field effect transistors (FETs), and more particularly, to self-aligned T-gate carbon nanotube field effect transistors (CNT FETs). Background technique [0003] One of the challenges facing the widespread commercialization of nanotube technology is the lack of a clear path for integrating carbon nanotubes (CNTs) with field effect transistors. As the process geometries for FETs continue to decrease, it becomes increasingly more difficult to manufacture FETs at scale, to have consistent and uniform characteristics across all FETs, and to even integrate CNTs into FETs of this reduced scale It is also increasingly difficult. Contents of the invention [0004] According to one or more embodiments, ...

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As the process geometries for FETs continue to decrease, it becomes increasingly more difficult to manufacture FETs at scale, to have consis

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