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Ultra-high-density single-walled carbon nanotube horizontal array and controllable preparation method thereof

A single-walled carbon nanotube, ultra-high density technology, applied in the direction of single-walled carbon nanotubes, carbon nanotubes, oriented carbon nanotubes, etc. The density does not meet the requirements and other problems, to achieve the effect of controllable preparation, simple sample preparation and low cost

Active Publication Date: 2016-05-11
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the direct growth method, the reported density still does not meet the requirements; for the post-processing method, the length, surface cleanliness and flatness of parallel arrangement of carbon nanotubes are still slightly insufficient

Method used

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  • Ultra-high-density single-walled carbon nanotube horizontal array and controllable preparation method thereof
  • Ultra-high-density single-walled carbon nanotube horizontal array and controllable preparation method thereof
  • Ultra-high-density single-walled carbon nanotube horizontal array and controllable preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Example 1, Growth of ultra-high-density single-walled carbon nanotube horizontal arrays

[0053] 1) Pretreatment of single crystal growth substrate;

[0054] Select the a-face α-alumina single crystal substrate as the substrate for carbon nanotube growth, cut it into a size of 4 mm × 6 mm, the side with a length of 4 mm is parallel to the [0001] direction, and the side with a length of 6 mm is parallel to the [1-100] direction. This substrate is pretreated as follows:

[0055] Sequentially ultrasonic cleaning in secondary water, acetone, ethanol and secondary water for 10 minutes, and then drying with high-purity nitrogen, the surface morphology is as follows: figure 2 a) as shown.

[0056] Put the cleaned substrate into the muffle furnace, raise the temperature from room temperature to 1100°C within 2 hours, keep the temperature at 1100°C for 8 hours, then cool down to 300°C within 10 hours, and then naturally cool down to room temperature to obtain the pretreated ...

Embodiment 2

[0068] Embodiment 2, growing ultra-high-density single-walled carbon nanotube horizontal arrays;

[0069] Step 1) is the same as embodiment 1 step 1;

[0070] Step 2) and 3) Fe(OH) used in embodiment 1 3 / EtOH solution was replaced by (NH 4 ) 6 Mo 7 o 4 The concentration is 0.01mmol / L (NH 4 ) 6 Mo 7 o 4 / EtOH solution, and then according to step 3) of Example 1, spin-coat on the a-face α-alumina single crystal substrate, that is, the surface of the a-face α-alumina single-crystal substrate is loaded with a Mo-containing catalyst.

[0071] 4) Annealing

[0072] Place the substrate in a muffle furnace, anneal at high temperature in air, rise from room temperature to 1000°C within 1.5 hours, keep the temperature at 1000°C for 16 hours, then cool down to 300°C within 10 hours, and then naturally cool down to room temperature to complete the annealing step;

[0073] 5) Directional growth of single-walled carbon nanotubes by chemical vapor deposition:

[0074] Place the ...

Embodiment 3

[0076] Embodiment 3, the mechanism analysis of the preparation method of ultra-high-density single-walled carbon nanotube horizontal array;

[0077] 1) Analysis and verification of the fusion mechanism in the preparation method of ultra-high-density single-walled carbon nanotube horizontal arrays;

[0078] The single crystal growth substrate after the annealing of step 4) in embodiment 1 is carried out XPS depth analysis, as Figure 5 As shown, there is Fe element found on the surface of the alumina single crystal substrate. Obviously, the Fe catalyst can indeed enter the alumina single crystal substrate and store it through the above annealing method.

[0079] 2) Analysis and verification of the release mechanism in the preparation method of ultra-high-density single-walled carbon nanotube horizontal arrays;

[0080] The single crystal growth substrate obtained in step 4) of Example 1 was placed in a tube furnace for hydrogen annealing treatment, the hydrogen flow rate was 1...

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Abstract

The invention discloses an ultra-high-density single-walled carbon nanotube horizontal array and a controllable preparation method thereof. The method comprises the following steps: loading a catalyst on a single crystal growth substrate, annealing, introducing hydrogen in a chemical vapor deposition system, carrying out reduction reaction of the catalyst, maintaining introduction of hydrogen, and performing orientated growth of single-walled carbon nanotubes, thereby obtaining the horizontal array. The ultra-high-density single-walled carbon nanotube horizontal array prepared by the method has the density exceeding 130 nanotubes per micron and a single-walled carbon nanotube horizontal array with the highest direct growth density reported in the world at present. According to the test of electrical properties of the ultra-high-density single-walled carbon nanotube horizontal array prepared by the method, the horizontal array has the drain current density of 380 [mu]A / [mu]m and has the transconductance of 102.5 [mu]S / [mu]m, which are the highest level in carbon nanotube field effect transistors in the world at present.

Description

technical field [0001] The invention belongs to the field of semiconductors, and relates to a horizontal array of ultra-high-density single-wall carbon nanotubes and a controllable preparation method thereof. Background technique [0002] Single-walled carbon nanotubes (SWNTs) have attracted great attention of nanotechnology workers since their discovery in 1993 due to their special structure and excellent performance. It has high toughness, strong conductivity, excellent field emission performance, both metallic and semiconductor properties, known as "super fiber", and is considered to be one of the main materials in nanoelectronic devices in the post-Moore era. Currently, the potential applications of SWNTs are extensively studied, including quantum wires, electronic devices, composite materials, electroluminescence, photoluminescence, chemical sensors and nanoparticle carriers, etc. [0003] For the chip industry, traditional transistors are based on silicon. However, wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02B82Y30/00H10K99/00
CPCC01B2202/08C01B2202/22C01B32/162B82Y10/00C30B29/60B82Y30/00B82Y40/00C01B2202/02C30B25/186C30B29/02Y10S977/75Y10S977/843Y10S977/938H10K85/221H10K10/484H10K10/464H10K10/488H10K71/10B05D1/005B05D1/60B05D3/007B05D3/0406B05D3/0453C23C16/0272C23C16/26C23C16/45512C30B29/20C30B31/04
Inventor 张锦胡悦康黎星赵秋辰张树辰
Owner PEKING UNIV
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