Method of etching surface topography of polydimethylsiloxane (PDMS) by oxygen plasmas

Abstract

The invention provides a method of etching the surface topography of polydimethylsiloxane (PDMS) by oxygen plasmas. The method comprises the steps of placing a prepared PDMS stamp in an oxygen plasma atmosphere, and etching the PDMS stamp to obtain a surface microstructure. Moreover, a method of preparing a CD surface microstructure with a regular microstructure is introduced in details. According to the method provided by the invention, the oxygen plasmas are used for etching the PDMS stamp with the surface microstructure, which is obtained by a replica moulding technology, and the height of the microstructure of the PDMS stamp is accurately regulated and controlled by changing the etching time of the oxygen plasmas. The technology is low in cost, high in accuracy, simple and convenient to operate, and wide in application range; the topography height of the PDMS stamp is regulated and controlled by the oxygen plasmas under a condition of no change on the topography of the PDMS stamp; the microstructure prepared by the method provided by the invention has wide application prospects in many fields of optics, microelectronics, sensors, biomedicine and the like.

Description

technical field [0001] The invention relates to an etching processing technology for the surface of a polymer elastic body, in particular to an oxygen plasma etching process for the surface topography of PDMS. Especially the method of oxygen plasma etching the surface topography of polydimethylsiloxane. Background technique [0002] Etching technology is a very important step in the microelectronics manufacturing process and micro-nano manufacturing process, and is a major process of patterning processing associated with lithography. Polydimethylsiloxane (PDMS) is a commonly used microelectronic chip material; it has the general characteristics of polymer materials, in addition to high optical transparency and good biocompatibility, non-toxic, micro Strong replication ability. There are two types of etching methods commonly used at present: dry etching and wet etching. For ultra-large-scale integrated circuits with micron-scale and sub-micron linewidths, the etching metho...

AI Technical Summary

Problems solved by technology

For ultra-large-scale integrated circuits with micron-scale and sub-micron-scale line widths, the etching method must have high anisotropy characteristics to ensure the accuracy of the pattern, but wet etching cannot meet this requirement

The photolithography technology commonly used in dry etching usually requires complex equipment and processes due to its accuracy, stability and other requirements. There are many factors to be considered and controlled, high cost and cumbersome process, so it is not suitable for mass production.

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