497 results about "Amorphous solid" patented technology

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.

An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON / OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18 / cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

A light conversion device and high-intensity, solid-state light source utilize wavelength conversion elements with a thermal conductivity greater than 1 watt per meter per degree Kelvin (W / m-K). Exemplary materials that have high thermal conductivity include monocrystalline solids, polycrystalline solids, substantially densified ceramic solids, amorphous solids or composite solids. The light conversion device and high-intensity, solid-state light source have at least one heat sink that is in direct thermal contact with the wavelength conversion element. The heat sink quickly dissipates heat generated within the wavelength conversion element in order to prevent the wavelength conversion element from overheating and undergoing thermal quenching of the wavelength conversion and light emission.

An acidic amorphous silica-amumina has a large specific surface area and a large pore volume. A carrier complex and a hydrotreating catalyst containing acidic amorphous silica-alumina, in particular a hydrocracking catalyst containing acidic amorphous silica-alumina in combination with a modified zeolite-Y, treats petroleum hydrocarbon materials to produce middle distillates. The amorphous silica-alumina has a SiO2 content of 10-50 wt. %, a specific surface area of 300-600 m2 / g, a pore volume of 0.8-1.5 ml / g and an IR acidity of 0.25-0.60 mmol / g. The catalyst shows a relatively high activity and mid-distillate selectivity and can be particularly used in hydrocracking process for producing mid-distillates with a higher yield.

An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.

An impregnated solid state composite cathode is provided. The cathode contains a sintered porous active material, in which pores of the porous material are impregnated with an inorganic ionically conductive amorphous solid electrolyte. A method for producing the impregnated solid state composite cathode involves forming a pellet containing an active intercalation cathode material; sintering the pellet to form a sintered porous cathode pellet; impregnating pores of the sintered porous cathode pellet with a liquid precursor of an inorganic amorphous ionically conductive solid electrolyte; and curing the impregnated pellet to yield the composite cathode.

The present invention features solid compositions comprising amorphous Compound I. A solid dispersion of the present invention also contains a pharmaceutically acceptable hydrophilic polymer and a pharmaceutically acceptable surfactant. Compound I may be formulated in an amorphous solid dispersion which comprises a pharmaceutically acceptable hydrophilic polymer and preferably a pharmaceutically acceptable surfactant.

A process for preparing the amorphous Si-Al material by the carbonizing method includes such steps as adding part of sodium silicate solution to sodium aluminate solution, introducing CO2 gas to it for a certain time, adding the rest of sodium silicate solution while reacting, stabilizing, filtering, washing and drying. It can be used as the carrier of catalyst.

The invention discloses a hydrocracking catalyst carrier and a preparation method thereof. The catalyst carrier comprises a modified Y-type molecular sieve, amorphous silica-alumina and alumina, wherein the modified Y-type molecular sieve is Y-type molecular sieve treated by mixed aqueous solution of an aluminum salt and an acid and by hydrothermal process. In the carrier, the modified Y-type molecular sieve has a high crystallinity, high silicon to aluminum ratio and proper total acidity and acid distribution and can form an acid component with the amorphous silica-alumina. Therefore, the carrier is particularly suitable for serving as a hydrocracking catalyst carrier to improve the activity of a hydrocracking catalyst and the selectivity of middle distillates.

A field effect transistor includes a channel layer 11, a source electrode 13, a drain electrode 14, a gate insulation layer 12 and a gate electrode 15 formed on a substrate 10. The channel layer is made of an amorphous oxide and that the gate insulation layer is made of an amorphous oxide containing Y.

A thin film field effect transistor that has on a substrate, at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein the active layer includes an amorphous oxide, a carrier concentration of the amorphous oxide decreases together with lowering of a temperature thereof from room temperature, and the amorphous oxide has an activation energy of from 0.04 eV to 0.10 eV is provided. A thin film field effect transistor having high mobility and a high ON-OFF ratio, and a high-gradation electroluminescence display using the same are provided.

An all-solid-state cell has a fired solid electrolyte body, a first electrode layer integrally formed on one surface of the fired solid electrolyte body by mixing and firing an electrode active material and a solid electrolyte, and a second electrode layer integrally formed on the other surface of the fired solid electrolyte body by mixing and firing an electrode active material and a solid electrolyte. The first and the second electrode layers are formed by mixing and firing the electrode active material and the amorphous solid electrolyte, which satisfy the relation Ty>Tz (wherein Ty is a temperature at which the capacity of the electrode active material is lowered by reaction between the electrode active material and the solid electrolyte material, and Tz is a temperature at which the solid electrolyte material is shrunk by firing).

In an inventive polymer electrolyte battery including a positive electrode, a negative electrode and a polymer electrolyte, at least one of the positive electrode and the negative electrode is formed with an inorganic amorphous solid electrolyte film at its interface with the polymer electrolyte.

A general purpose integrated circuit (IC) tester includes a set of channels, one for each input or output pin of an IC device under test (DUT). Each channel is programmed by a host computer to either supply a test signal to a DUT I / O pin or sample a DUT output signal appearing at the I / O pin and produce sample data representing its magnitude or logic state. The tester also includes an amorphous logic circuit (ALC) having a set of input and output terminals and a programmable logic circuit interconnecting the input and output terminals. Some of the ALC input and output terminals receive the sample data produced by each channel and other ALC terminals send control signals directly to each channel. Other ALC terminals transmit data to the host computer. When it programs the channels to perform a test, the host computer also programs the ALC to control various operations of the channels during the test, to perform a real-time analysis of the test data produced by the channels, and to communicate results of the analysis to the host.

The present invention is amorphous Adefuweichi ester solid matter and its preparation process. The amorphous Adefuweichi ester solid matter is solid powder obtained through solidifying oil amorphous Adefuweichi ester and has, X-ray test shows, at least 80% amorphous component. The amorphous Adefuweichi ester solid matter of the present invention is easy to filter and dry, has excellent flowability and bulk density performance, and the present invention makes it easy to produce medicine composite containing Adefuweichi ester and its suitable for industrial production.

The invention discloses a high-activity amorphous silica-alumina, a hydrocracking catalyst supported by amorphous silica-alumina, and preparation methods thereof. The preparation method of the amorphous silica-alumina supporter comprises the following steps: preparing a silicon source-aluminum source mixed water solution, mixing the mixed water solution with a precipitant solution, carrying out cocurrent flow coprecipitation to obtain a precipitated slurry, transferring the slurry into a closed vessel, aging, molding, and roasting. The invention also provides a preparation method of a hydrocracking catalyst by using the amorphous silica-alumina as the supporter. The preparation method of the hydrocracking catalyst is as follows: in the preparation method of the amorphous silica-alumina supporter, a nickel salt or nickel salt and metal aid M salt is / are added into the silicon source-aluminum source mixed water solution in the step (1), and the rest steps are the same as those in the preparation method of the amorphous silica-alumina supporter. The coprecipitation process is adopted in the preparation process, and the silicon source and aluminum source finally exist in the catalyst in the form of the amorphous silica-alumina, but the catalyst has much higher activity than the common amorphous silica-alumina catalyst.

A lithium microbattery comprises a substrate on which at least one stack is arranged successively comprising a cathode, an electrolyte containing lithium and an anode consisting of metallic lithium. A protective envelope comprising at least first and second distinct superposed layers covers the stack to protect the same against external contamination. The first layer, deposited on the whole of the anode, comprises at least one material that is chemically inert with regard to lithium, selected from the group consisting of a hydrogenated amorphous silicon carbide, a hydrogenated amorphous silicon oxycarbide, hydrogenated amorphous carbon, fluorinated amorphous carbon and hydrogenated amorphous silicon. The second layer comprises a material selected from the group consisting of a hydrogenated amorphous silicon carbonitride, a hydrogenated amorphous silicon nitride and a fluorinated amorphous carbon.

In accordance with one embodiment, the present invention is directed towards a process for forming an organic electroluminescent device comprising depositing on a substrate at least first and second electrode layers and an organic EL element comprising one or more organic material layers between the first and second electrode layers, wherein at least one organic material layer of the EL element is deposited by providing a continuous stream of amorphous solid particles of organic material suspended in at least one carrier gas, the solid particles having a volume-weighted mean particle diameter of less than 500 nm, and depositing particles of the organic material to form a thin uniform layer of the organic material on the substrate surface.

PCT No. PCT / EP96 / 03246 Sec. 371 Date Feb. 12, 1999 Sec. 102(e) Date Feb. 12, 1999 PCT Filed Jul. 20, 1996 PCT Pub. No. WO97 / 08250 PCT Pub. Date Mar. 6, 1997Wax coated silica matting agent wherein the silica is an amorphous silica having a pore volume of at least 1.5 cm3 / g, preferably at least 1.8 cm3 / g. The wax coating is present in the range from 6% to 15% by weight of the matting agent and comprises a synthetic polyethylene wax.

A toner having an amorphous resin, a crystalline resin, and a colorant, wherein the crystalline resin has a melting temperature of at least 70° C. and a recrystallization point of at least 47° C. exhibits improved document offset properties and improved heat cohesion. Annealing the toner further improves the heat cohesion and morphology of the toner.

Provided is a resistive memory device including an amorphous solid electrolyte layer in a storage node. The resistive memory device includes a switching device and a storage node connected to the switching device. The storage node includes upper and lower electrodes formed of a bivalent or multivalent metal, and an amorphous solid electrolyte layer and an ion source layer formed of a monovalent metal between the upper and lower electrodes.

The present invention features solid compositions comprising a selected HCV inhibitor in an amorphous form. In one embodiment, the selected HCV inhibitor is formulated in an amorphous solid dispersion which comprises a pharmaceutically acceptable hydrophilic polymer and preferably a pharmaceutically acceptable surfactant.

A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.

The present invention provides a method for producing a bulk amorphous alloy sheet with high quality at low production cost, by which an alloy melt can be directly transformed into a sheet form without using other additional processes. The method comprises preparing a melt containing alloy components; feeding the melt into a gap defined between two rolls, which rotate in opposite direction to each other, and each of which is provided with heat exchange means; and cooling the melt at a cooling rate higher than the critical cooling rate for transformation of the melt into an amorphous solid phase, when the melt passes through the gap defined between the two rolls. The present invention also provides an apparatus for producing a bulk amorphous alloy sheet with high quality at low production cost, and a bulk amorphous alloy sheet.