Semiconductor device and method for manufacturing the same, and electric device
Patent Information
- Authority / Receiving Office
- US ยท United States
- Patent Type
- Applications(United States)
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Publication Date
- 2009-03-19
- Estimated Expiration
- Not applicable ยท inactive patent
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Abstract
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a semiconductor device having a circuit including a thin film transistor (hereinafter, referred to as a TFT) and to a manufacturing method thereof. Specifically, the present invention relates to a semiconductor device having a circuit including a field effect transistor (hereinafter, referred to as an FET). For example, the present invention relates to an electronic device incorporating, as part thereof, a large-scale integrated circuit (LSI), an electro-optic device typified by a liquid crystal display panel, a light-emitting display device having an organic light-emitting element, a sensor device such as a line sensor, or a memory device such as an SRAM or a DRAM, for example.
[0003] 2. Description of the Related Art
[0004] Note that a semiconductor device in this specification means general devices and apparatuses that can function with the use of semiconductor characteristics; for exampl...