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A kind of range matching cam unit circuit and rcam memory composed of it

A unit circuit and memory technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of poor circuit anti-noise ability and limited circuit speed, so as to enhance anti-noise ability and improve gate voltage swing. the effect of

Active Publication Date: 2017-07-21
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The circuit significantly reduces the problem of leakage current in the matching unit, but the circuit’s anti-noise ability is not good due to the voltage drop of the threshold voltage in the internal nodes of the matching unit. limit

Method used

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  • A kind of range matching cam unit circuit and rcam memory composed of it
  • A kind of range matching cam unit circuit and rcam memory composed of it
  • A kind of range matching cam unit circuit and rcam memory composed of it

Examples

Experimental program
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Effect test

Embodiment Construction

[0039] The present invention will be further described below in conjunction with accompanying drawing.

[0040] like figure 1 As shown, the drain of the third NMOS transistor MN3 in the greater than interval matching unit GERMC circuit is connected to the second input GE path, and its gate is connected to the D# terminal, and the D# terminal is the logical inversion of the D terminal. The third NMOS The source of the transistor MN3 is connected to the drain of the fourth NMOS transistor MN4, its source is grounded, and its gate is connected to the third input SL.

[0041] like figure 2 As shown, the drain of the third NMOS transistor MN3 in the LERMC circuit is connected to the second input GE path, its gate is connected to the D terminal, and the source of the third NMOS transistor MN3 is connected to the fourth The drain of the NMOS transistor MN4 is connected to the ground, the gate is connected to the fourth input SL#, and the SL# is the logical negation of SL.

[0042...

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PUM

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Abstract

The invention relates to the technical field of manufacturing of integrated circuits and provides a range matching CAM (Content Addressable Memory) unit circuit and an RCAM (Range Content Addressable Memory) composed of the range matching CAM unit circuit. According to the range matching CAM unit circuit, high-voltage swing is greater than a GERMC circuit in a range matching unit; a fifth NMOS (N-channel Metal Oxide Semiconductor) tube is in complementary combination with an MP1 of a first PMOS (P-channel Metal Oxide Semiconductor) tube; a grid electrode of the MP1 is connected with a D# end; a source electrode of the MP1 is connected with a third input SL; an MN6 of a sixth NMOS tube is in the complementary combination with an MP2 of a second PMOS tube; a grid electrode of the MP2 is connected with a D end; a source electrode of the MP2 is connected with a fourth input SL#; a node connected between the two combined tubes which are mutually connected in series is connected with the grid electrodes of an MN1 and an MN2 of a first NMOS tube and a second NMOS tube; a drain electrode of an MN3 of a third NMOS tube is connected with a second input GE path, and the grid electrode of the MN3 of the third NMOS tube is connected with the D# end. According to the range matching CAM unit circuit and the RCAM, the two PMOS tubes are introduced to change transmission tubes MN5 and MN6 into transmission gates so that the P-point voltage swing is improved and the voltage drain drain VDD can be reached, so that the transmission speeds of signals equal to a chain or greater than the chain are increased and the circuit speed is increased; meanwhile, the robustness of the unit circuit is also improved and the anti-noise capability is improved.

Description

technical field [0001] The present invention relates to the technical field of integrated circuit manufacturing, and more specifically, relates to a range matching CAM (Content Addressable Memory, Content Addressable Memory) unit circuit and an RCAM (Range Content Addressable Memory, Range Matching Content Addressable Memory) composed of the same memory. Background technique [0002] With the rapid development of Internet technology, network traffic continues to increase and network speed continues to increase, which requires Internet hardware equipment to be continuously updated to meet the needs of rapid network development. For an IPV4 data packet, the port lookup operation is usually completed by using an RCAM circuit, which puts forward higher requirements on performance such as speed and power consumption of the RCAM circuit. The design of high-performance RCAM circuit is of great significance to the support of high-speed network. Research on RCAM at home and abroad ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C15/04
Inventor 张建伟殷存禄吴国强郑善兴丁秋红潘阿成李中洲吕文欢王建陈晓明苗延楠
Owner DALIAN UNIV OF TECH
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