A kind of range matching cam unit circuit and rcam memory composed of it
A unit circuit and memory technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of poor circuit anti-noise ability and limited circuit speed, so as to enhance anti-noise ability and improve gate voltage swing. the effect of
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[0039] The present invention will be further described below in conjunction with accompanying drawing.
[0040] like figure 1 As shown, the drain of the third NMOS transistor MN3 in the greater than interval matching unit GERMC circuit is connected to the second input GE path, and its gate is connected to the D# terminal, and the D# terminal is the logical inversion of the D terminal. The third NMOS The source of the transistor MN3 is connected to the drain of the fourth NMOS transistor MN4, its source is grounded, and its gate is connected to the third input SL.
[0041] like figure 2 As shown, the drain of the third NMOS transistor MN3 in the LERMC circuit is connected to the second input GE path, its gate is connected to the D terminal, and the source of the third NMOS transistor MN3 is connected to the fourth The drain of the NMOS transistor MN4 is connected to the ground, the gate is connected to the fourth input SL#, and the SL# is the logical negation of SL.
[0042...
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