Method for transferring graphene with atomic cleanness

A transfer method, graphene technology, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., to achieve the effect of reducing PMMA residues, retaining initial properties, and improving residue problems

Inactive Publication Date: 2013-12-18
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this method, the residual problem caused by the easy repolymerization of PMMA has always been the bottleneck that limits the further development of this method.

Method used

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  • Method for transferring graphene with atomic cleanness
  • Method for transferring graphene with atomic cleanness
  • Method for transferring graphene with atomic cleanness

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Embodiment 1, CVD graphene is transferred to SiO with acetic acid as organic acid solution 2 Substrate surface

[0069] The preparation steps are as follows:

[0070] (1) Spin-coat a layer of PMMA solution (960PMMA A4, MicroChem) on the surface of copper foil with graphene (for the specific preparation method, refer to Nanotechnology,.2012, 23, 0957-4484.), and the spin-coating speed is 3000rpm. After the spin coating, the copper foil coated with PMMA was placed on a heating plate at 180°C for heating and curing.

[0071] (2) The sample PMMA faces up and floats at 0.1mol / L (NH 4 ) 2 S 2 o 8 The surface of the solution was corroded for 3 hours. After the copper foil is fully dissolved, transfer it to clean water and soak for 60 minutes.

[0072] (3) After cleaning the residual ions on the graphene surface, select a piece of clean SiO 2 The substrate scoops up thin layers of graphene and PMMA. Transfer the sample to the heating table and heat at 180°C for 1h to m...

Embodiment 2

[0077] Embodiment 2, CVD graphene is transferred mica substrate surface with acetic acid as organic acid solution

[0078] Use organic acid as a solvent to transfer CVD graphene to the surface of mica substrate, except that the target substrate is made of SiO in step (3). 2 Except changing to mica, all the other operations are the same as in Example 1.

Embodiment 3

[0079] Embodiment 3, using the graphene obtained in Embodiment 2 as a substrate, constructing a self-assembled layer of 8-octyloxyphthalocyanine copper molecules on its surface.

[0080] Taking the graphene obtained in embodiment 2 as the substrate, the concentration of dripping on its surface is about 10 -5 mol / L toluene solution of 8-octyloxycopper phthalocyanine, after the solvent evaporates, a self-assembled layer of 8-octyloxycopper phthalocyanine on the graphene surface can be obtained.

[0081] Compared image 3 with Figure 4 It can be found that although the conventional solvent acetone can dissolve most of the PMMA coating, the residue of partially overpolymerized PMMA is still very serious. Using acetic acid as a solvent can greatly improve the problem of PMMA residue on the graphene surface. In the atomic force microscope scanning image, the PMMA residue on the graphene surface treated with organic acid as solvent is significantly less than the graphene surface t...

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PUM

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Abstract

The invention discloses a method for efficiently transferring CVD (Chemical Vapor Deposition) graphene and acquiring atomically clean surfaces. The method comprises the following steps: spin-coating a layer of PMMA (polymethyl methacrylate) solution on the surface of a graphene/metal substrate, removing the metal substrate through corrosion of an (NH4)2S2O8 solution after being cured, cleaning graphene/PMMA, fishing out through a target substrate and then drying, then dissolving the PMMA layer through an organic acid solvent, and finally further removing the residual PMMA on the surface of the graphene through a high-temperature annealing manner, thus acquiring the atomically clean graphene surfaces. The graphene surface is large in area, complete in structure and little in defects and residual PMMA. According to the method, the residual PMMA is little, and the atomically clean surfaces can be more easily acquired. The graphene acquired through adopting the method is applicable to constructing electronic devices such as a field effect transistor, a light-emitting diode and a transparent electrode, and also can be used for theoretical research of surface interfaces.

Description

technical field [0001] The invention relates to a method for atomically clean transfer of graphene, in particular to a method for efficiently transferring CVD graphene and obtaining an atomically clean surface, belonging to the field of nanomaterials and technologies. Background technique [0002] Graphene has a series of excellent properties, such as ultra-high carrier mobility, thermal conductivity, mechanical strength, etc. Since its discovery in 2004, it has been a research hotspot in many frontier fields such as physics, materials science, and surface and interface science. . The main ways to obtain graphene are mechanical / solution exfoliation method, SiC epitaxial growth method, reduced graphene oxide method and chemical vapor deposition method (CVD method). Among them, the CVD method has shown potential application prospects in the fields of touch screen devices and transparent electrodes due to its advantages such as controllable layer number and easy enlargement of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/194
Inventor 王栋李景万立骏
Owner INST OF CHEM CHINESE ACAD OF SCI
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