Method and corrosive liquid for making texture surface of monocrystalline silicon

A technology of etching liquid and monocrystalline silicon, which is applied in chemical instruments and methods, crystal growth, and final product manufacturing, etc., can solve the problems of single crystal silicon texture reduction, use limitation, unsatisfactory short-circuit current, etc., and achieve high photoelectric conversion Efficiency, effect of high short-circuit current

Active Publication Date: 2011-09-14
JETION SOLAR HLDG
View PDF5 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The experimental results show that the monocrystalline silicon textured surface prepared by using sodium silicate as an additive corrosion solution is not ideal for reducing the reflectivity of s

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and corrosive liquid for making texture surface of monocrystalline silicon
  • Method and corrosive liquid for making texture surface of monocrystalline silicon
  • Method and corrosive liquid for making texture surface of monocrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0045] Example 1

[0046] The corrosion solution used in this embodiment includes, by mass concentration, 0.1% NaOH, 8% isopropanol, 0.3% sodium lactate, 1% urea, and the balance water.

[0047] The operation steps are as follows:

[0048] 1) Throwing the monocrystalline silicon wafer into a NaOH solution with a temperature of 65° C. and a concentration of 10% for rough polishing to remove the mechanically damaged layer. The time for rough polishing is 1.5 minutes;

[0049]2) Rinse the roughly polished monocrystalline silicon with pure water to remove surface residues;

[0050] 3) Throwing monocrystalline silicon into an etching solution at a temperature of 78°C to make a suede surface, and the etching time is 20 minutes;

[0051] 4) Rinse the corroded monocrystalline silicon with pure water to remove surface residues;

[0052] 5) Spin the monocrystalline silicon wafer to dry in a spin dryer.

[0053] Observe the surface morphology of single crystal silicon with SEM, such ...

Example Embodiment

[0055] Example 2

[0056] The corrosion solution used in this embodiment includes, by mass concentration, 0.5% NaOH, 5% isopropanol, 0.5% sodium lactate, 2% urea, and the balance water.

[0057] Operation steps are identical with embodiment 1.

[0058] The monocrystalline silicon wafers were assembled into batteries, and the measured electrical properties are listed in Table 1.

Example Embodiment

[0059] Example 3

[0060] The corrosion solution used in this embodiment includes, in terms of mass concentration: 0.2% NaOH, 6% isopropanol, 0.25% sodium lactate, 1% urea, and the balance water.

[0061] Operation steps are identical with embodiment 1.

[0062] The monocrystalline silicon wafers were assembled into batteries, and the measured electrical properties are listed in Table 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a corrosive liquid for making the texture surface of monocrystalline silicon. The corrosive liquid comprises the following components based on mass concentration: 0.1 to 0.5 percent of NaOH and/or KOH, 5 to 8 percent of isopropyl alcohol and/or ethanol, 0.3 to 0.5 percent of sodium lactate, 1 to 2 percent of urea and the balance of water; and the sodium lactate and the urea are selected as additives and are matched with an alkali solution and an alcoholic solution to prepare the corrosive liquid. Compared with the prior art, the invention has the advantages that: experimental results show that the reflectivity of solar light can be reduced to between 6 and 8 percent by adopting the texture surface of the monocrystalline silicon prepared by the corrosive liquid. Moreover, the texture surface of the monocrystalline silicon has higher short-circuit current and higher photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon used for preparing solar cells, in particular to a method for making a single crystal silicon textured surface and an etching solution. Background technique [0002] Solar photovoltaic cells, referred to as photovoltaic cells, are used to directly convert the sun's light energy into electrical energy. Compared with conventional energy sources, photovoltaic cells are a renewable and clean energy source, which is beneficial to environmental protection and can save expensive transmission lines, so photovoltaic cells have broad application prospects. Monocrystalline silicon wafer or polycrystalline silicon wafer is the main component of making photovoltaic cells. When sunlight shines on single crystal silicon wafer or polycrystalline silicon wafer, light energy can be converted into electrical energy. [0003] When sunlight irradiates on the surface of a silicon wafer, more than 40% of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B33/10C23F1/40
CPCY02P70/50
Inventor 李建飞汪琴霞黄镇郭建东樊选东
Owner JETION SOLAR HLDG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap