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Method for preparing pile face doped zinc oxide transparent conductive film

A transparent conductive film, aluminum-doped zinc oxide technology, used in cable/conductor manufacturing, conductive layers on insulating carriers, circuits, etc., can solve the problem that surface structure cannot be obtained, light trapping effect cannot be achieved, and it is difficult to etch into inverted Pyramid-shaped suede and other problems, to achieve the effect of improving photoelectric conversion efficiency, improving efficiency, and increasing short-circuit current

Inactive Publication Date: 2010-04-07
EAST CHINA NORMAL UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

For industrial production, the high-power rapid deposition of ZnO:Al transparent conductive film is a necessary choice, but the ZnO:Al transparent conductive film obtained under high-power rapid deposition cannot be well etched after wet chemical etching. surface structure, it is difficult to be etched into inverted pyramid-like suede
After etching, only sparse and very shallow inverted pyramid pits are distributed on the surface of the ZnO:Al film, which cannot achieve a good light trapping effect.

Method used

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  • Method for preparing pile face doped zinc oxide transparent conductive film
  • Method for preparing pile face doped zinc oxide transparent conductive film
  • Method for preparing pile face doped zinc oxide transparent conductive film

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Embodiment 1

[0053] Deposition of ZnO:Al film as a mask layer by sputtering at low rate

[0054] First prepare the ZnO:Al transparent conductive film deposited at a high rate: the specific steps include:

[0055] (1) Clean the glass substrate (30cm×30cm or 10cm×10cm). The glass substrate is ultrasonically cleaned with acetone and alcohol for 60 minutes, cleaned with deionized water, and then dried with pure nitrogen or ultrasonically cleaned with acetone and alcohol. The cleaned glass substrate is placed in a spin dryer to dry;

[0056] (2), put the cleaned glass substrate into the sample loading chamber of the sputtering system to vacuumize, and heat the substrate. For a target material with a doping concentration of 2wt%, the heated substrate temperature needs to be Above 250°C, and for the doping concentration of 1wt%, the heated substrate temperature needs to be above 300°C, and for the doping concentration of 0.5wt%, the heated substrate temperature needs to be above 350°C, and for ...

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Abstract

The invention discloses a method for preparing a pile face doped zinc oxide transparent conductive film. The method comprises magnetic control sputtering growth of an aluminum doped zinc oxide(ZnO:Al) transparent conductive film, preparation of a masking layer nanometer film and formation of a pile face structure by the wet method chemical etching treatment of the deposited transparent conductive film at a later stage. The ZnO:Al transparent conductive film is prepared by the non-reaction magnetic control sputtering deposition, and the target materials used in the magnetic control sputtering are ZnO:Al203 ceramic target materials at doping concentrations; and the pyramid-inversed pile face ZnO:Al transparent conductive film is prepared by designing a masking layer for the ZnO:Al transparent conductive film and adopting the wet method chemical etching. The method has the advantages that: the process is simplified; the cost is reduced; and the conductive film prepared by the method has good light trapping effect and can be widely used in various highly efficient photoelectric devices, flat panel displayers and film solar cells to improve efficiency of the devices, in particular in the preparation of the silicon film solar cells to improve the photoelectric conversion efficiency of the solar cells.

Description

technical field [0001] The invention relates to the technical field of solar cell preparation, in particular to a method for preparing an inverted pyramid-shaped suede doped zinc oxide transparent conductive film with low cost and high deposition rate. Background technique [0002] As human beings enter the 21st century, environmental pollution and energy shortages have increasingly restricted the sustainable development of society, and the energy transmitted by solar energy shining on the earth for one hour can meet the electricity demand of all human beings for one year. As the most ideal feature of sustainable development, solar photovoltaic power generation will enter the human energy structure and become an important part of basic energy. my country has included it in the national medium and long-term science and technology development plan as an important basic condition for building a harmonious and sustainable new society. In the cost structure of the photovoltaic p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14H01L31/18H01L31/20H01L31/0224H01L31/0232
CPCY02P70/50
Inventor 黄素梅朱红兵孙卓
Owner EAST CHINA NORMAL UNIV
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