Minisize nuclear battery

A nuclear battery and miniature technology, applied in the field of microelectronics, can solve the problems of reducing energy conversion efficiency, energy loss, etc., and achieve the effect of improving energy conversion efficiency, reducing blocking, and being easy to implement

Inactive Publication Date: 2008-12-17
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this PN structure, in order to prevent the ohmic contact electrode from blocking the incident particles, the ohmic electrode must be made at a corner of the device, which will cause the irradiated carriers far away from the ohmic electrode to be transported by surface defects. Recombination, and the incident particles must pass through the SiO2 passivation layer and part of the P-type layer on the surface, commonly known as the dead layer, causing energy loss and reducing energy conversion efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Step 1. Epitaxial low-doped epitaxial layer on SiC substrate, such as Figure 4 a.

[0048] An N-type highly doped 4H-SiC substrate is selected as the substrate 1. After cleaning, a 4H-SiC low-doped epitaxial layer 2 with a thickness of 10 μm is grown on the epitaxial surface by the low-pressure hot-wall chemical vapor deposition method. The epitaxial growth temperature is 1570° C., the pressure is 100 mbar; the reaction gas is silane and propane; the carrier gas is pure hydrogen.

[0049] Step 2. Form SiO on the epitaxial layer 2 passivation layer, such as Figure 4 b.

[0050] The epitaxy sample is subjected to dry oxygen oxidation for 2 hours at a temperature of 1100±50°C to form a passivation protective layer with a thickness of 25±3nm);

[0051] Step 3. Prepare ohmic contacts on the backside of the substrate, such as Figure 4 c.

[0052] 3.1, using the reactive ion etching method to etch a SiC layer with a thickness of 0.5 μm on the back side of the N-type h...

Embodiment 2

[0062] Steps 1~3 are identical with embodiment 1;

[0063] Step 4. Deposit Schottky contact layer and Schottky electrode, as Figure 4 d.

[0064] 4.1 Use buffered HF acid with a concentration of 5% to etch for 10 seconds, and the SiO 2 A Schottky contact window is etched out in the middle of the passivation layer 5;

[0065] 4.2 SiO on and around the etched window 2 Deposit Ni with a thickness of 20nm on the passivation layer,

[0066] 4.3 Form Schottky metal layers 4 on the windows by ultrasonic stripping, and the SiO around the windows 2 Schottky electrodes 6 are formed on the passivation layer;

[0067] Step 5 is the same as in Example 1.

Embodiment 3

[0069] Steps 1~3 are identical with embodiment 1;

[0070] Step 4. Deposit Schottky contact layer and Schottky electrode, as Figure 4 d.

[0071] 4.1 Use buffered HF acid with a concentration of 5% to etch for 10 seconds, and the SiO 2 A Schottky contact window is etched out in the middle of the passivation layer 5;

[0072] 4.2 SiO on and around the etched window 2 Deposit Ni with a thickness of 12nm on the passivation layer,

[0073] 4.3 Form Schottky metal layers 4 on the windows by ultrasonic stripping, and the SiO around the windows 2 Schottky electrodes 6 are formed on the passivation layer;

[0074] Step 5 is the same as in Example 1.

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Abstract

The invention discloses a minitype nuclear battery, which mainly solves the problem that the nuclear battery manufacturing is easier than the SiC technology realization. A low doping epitaxial layer (2) and an ohmic contact electrode (3) are respectively arranged at the upper part and the lower part of an N-type high doping SiC substrate (1), wherein, a circular schottky contact layer (4) is deposited on the upper surface of the low doping epitaxial layer (2), and a SiO2 passivating layer (5) and a bonding layer (7) are arranged on the circumference at the outer edge of the schottky contact layer. The schottky contact layer (4) and a schottky contact electrode (6) are formed by adopting an identical technology, that is, a schottky contact hole is etched by adopting wet process in the center position of the SiO2 passivating layer (5), and Ni, Pt or Au with the thickness being 5 to 20 nm deposited on the SiO2 passivating layer on the hole or at the periphery of the hole, and the schottky contact layer (4) and the schottky contact electrode (6) are respectively formed after the SiO2 passivating layer is peeled off. The minitype nuclear battery has the advantages of simple technology and high conversion efficiency, and is applicable in directly converting the nuclear energy radiated by isotopes into the electric energy.

Description

technical field [0001] The invention belongs to the technical field of microelectronics. Involves semiconductor diodes, especially miniature nuclear batteries, which can be used to convert nuclear energy emitted by isotopes directly into electrical energy. Background technique [0002] A micronuclear battery is a device that uses semiconductor diodes as an energy conversion structure to directly convert nuclear energy into electrical energy. It utilizes radioactive isotopes such as 63 Ni, 147 The ionization effect of the radiation particles emitted by Pm in the semiconductor material is used as an energy source, and the electron-hole pairs generated by the radiation particles in the semiconductor are collected to form a current and generate output power. Micronuclear batteries can be used as power sources for various memories and MEMS systems, as well as long-life, long-term maintenance-free mobile power sources in extreme cases such as aerospace. The IV characteristics ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G21H1/08
Inventor 张林郭辉张义门韩超张玉明
Owner XIDIAN UNIV
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