62 results about "Atomic battery" patented technology

The invention discloses a minitype nuclear battery, which mainly solves the problem that the nuclear battery manufacturing is easier than the SiC technology realization. A low doping epitaxial layer (2) and an ohmic contact electrode (3) are respectively arranged at the upper part and the lower part of an N-type high doping SiC substrate (1), wherein, a circular schottky contact layer (4) is deposited on the upper surface of the low doping epitaxial layer (2), and a SiO2 passivating layer (5) and a bonding layer (7) are arranged on the circumference at the outer edge of the schottky contact layer. The schottky contact layer (4) and a schottky contact electrode (6) are formed by adopting an identical technology, that is, a schottky contact hole is etched by adopting wet process in the center position of the SiO2 passivating layer (5), and Ni, Pt or Au with the thickness being 5 to 20 nm deposited on the SiO2 passivating layer on the hole or at the periphery of the hole, and the schottky contact layer (4) and the schottky contact electrode (6) are respectively formed after the SiO2 passivating layer is peeled off. The minitype nuclear battery has the advantages of simple technology and high conversion efficiency, and is applicable in directly converting the nuclear energy radiated by isotopes into the electric energy.

We introduce a new technology for Manufacturable, High Power Density, High Volume Utilization Nuclear Batteries. Betavoltaic batteries are an excellent choice for battery applications which require long life, high power density, or the ability to operate in harsh environments. In order to optimize the performance of betavoltaic batteries for these applications or any other application, it is desirable to maximize the efficiency of beta particle energy conversion into power, while at the same time increasing the power density of an overall device. The small (submicron) thickness of the active volume of both the isotope layer and the semiconductor device is due to the short absorption length of beta electrons. The absorption length determines the self absorption of the beta particles in the radioisotope layer as well as the range, or travel distance, of the betas in the semiconductor converter which is typically a semiconductor device comprising at least one PN junction. Various devices and methods to solve the current industry problems and limitations are presented here.

The invention discloses a PN junction or PIN junction type micro nuclear battery and a manufacturing method thereof, belonging to the fields of semiconductor, nuclear physics and micro energy source. The battery is provided with a protection ring 6 in the periphery ring-shaped region of a p+ type semiconductor layer 5 on the basis of traditional PN junction or PIN junction type micro nuclear battery; meanwhile a protection ring contact electrode 8 is arranged above the protection ring 6 for leading an electrical signal out; in addition, the manufacturing method of the nuclear battery is also disclosed. In the micro nuclear battery disclosed by the invention, the added protection ring inhibits surface leakage and influence of interface state current on radiation induced current, indirectly increases open circuit voltage, and also improves sensibility of elements on low-energy radioactive source, thus improving energy conversion efficiency of elements.

The invention discloses a fluorescent layer, a preparation method thereof, and an application of the fluorescent layer in nuclear batteries. A fluorescent powder layer is arranged on a glass substrate by a physical sedimentation method. The fluorescent layer is used in a nuclear battery structure and arranged between a radiation source and a photovoltaic semiconductor assembly. The fluorescent layer is used as an intermediate energy conversion medium from radiation energy to electric energy. Radiation damage of the radiation source to the photovoltaic semiconductor assembly is effectively isolated, the service life of the nuclear battery is prolonged, and the problem that a semiconductor in a radiation voltaic effect nuclear battery is easily damaged by radiation is solved. A Beta radiation source, the fluorescent layer and a photovoltaic assembly are combined into a whole by a laminated arrangement mode. The structure is compact. The effective action area can be increased. The output power of the battery can be improved. The nuclear battery has high mobility and good safety performance, and is applicable to electronic devices like monitors, signal receivers and micro controllers.

The magnetic fluid atomic battery uses the α particles emitted by the radioactive elements that release α to hit the nitrogen 14 nucleus, and the nitrogen 14 nucleus releases a proton. The energy of the α particles emitted by the radioactive elements is very low, so it needs to be accelerated by a small cyclotron accelerator to increase the α particles and The collision probability of the nitrogen 14 nucleus, and then use the proton released by the nitrogen 14 nucleus to hit the lithium 7 nucleus, and the lithium 7 nucleus will undergo a nuclear reaction with the incident proton to generate nuclear energy and become two alpha particles with greater energy, which will be accelerated by a linear particle accelerator Particles, the kinetic energy of α particles is converted into electric energy through the magnetic fluid power generation device, and the electrical appliances can be driven to work by connecting the voltage to the circuit with a wire. This is the summary of the manual.

The invention discloses a radiant scintillator type nuclear battery, and belongs to the technical field of nuclear energy utilization. The nuclear battery comprises a sealed shell, a radiant scintillator, a non-radiant scintillator, anti-reflection film and a semiconductor photovoltaic module. The radiant scintillator is surrounded by the non-radiant scintillator, and the anti-reflection film completely wraps the scintillators; the semiconductor photovoltaic module completely wraps the anti-reflection film, and the sealed shell is fixed to the outer wall of the semiconductor photovoltaic module. According to the radiant scintillator type nuclear battery, fluorescent materials and a radioactive source are integrated, the fluorescence yield is further increased, the damage caused by the external radioactive source to lattice structures of the scintillators is avoided, the size of the battery is reduced, the energy of the radioactive source is fully utilized, the output power of the battery is increased, and the battery is a novel way of the energy utilization of the radioactive source.

The invention discloses a PIN-type isotope nuclear battery. The PIN-type isotope nuclear battery comprises a radioactive isotope source layer 1, a SiO2 passivation layer 2, a SiO2 dense insulating layer 3, a p-type Ohmic contact electrode 4, a p-type SiC epitaxial layer 5, an n-type SiC epitaxial layer 6, an n-type SiC substrate 7 and an n-type Ohmic contact electrode 8. The PIN-type isotope nuclear battery is characterized in that the doping concentration of the p-type SiC epitaxial layer 5 is in the range from 1*10<19> cm<-3> to 5*10<19> cm<-3>, the doping concentration of the n-type SiC substrate 7 is in the range from 1*10<18> cm<-3> to 7*10<18> cm<-3>, and the n-type SiC epitaxial layer 6 is formed by injecting niobium ions having energy which is in the range from 2000KeV to 2500KeV and having a dosage which is in the range from 5*10<13> cm<-2> to 1*10<15> cm<-2>, wherein the doping concentration of the n-type SiC epitaxial layer 6 is in the range from 1*10<13> cm<-3> to 5*10<14> cm<-3>. According to the invention, the carrier concentration of the intrinsic layer can be reduced and the depletion region width can be increased, so the collection efficiency of generated electron hole pairs can be improved, so that the device open-circuit voltage and energy conversion efficiency can be improved.

The invention provides a thermonuclear cell which is low in cost, safe to operate and high in isotope irradiation conversion efficiency. The thermonuclear cell comprises at least one thermonuclear cell unit. Materials containing beta radiation sources are utilized by the thermonuclear cell unit to serve as an emitting electrode. Silicon wafers, alloy sheets, permanent magnetic pieces and capacitor plates are symmetrically arranged from near to far with the emitting electrode as the center. The silicon wafers with special structures are utilized by the thermonuclear cell, the contact area between the silicon wafers and energetic particles emitted by splitting of radioactive isotopes is increased, and the conversion efficiency is improved. The silicon wafers and the alloy sheets coated by special coating layers are utilized, the thermomagnetic properties of the silicon wafers and the alloy sheets are utilized to improve the utilization efficiency of heat energy, and the pyroelectricity capacity of the silicon wafers is integrated, so that the output electric energy is increased. It is confirmed by the experiments that the thermonuclear cell uses tritium as the radioactive source, the dimension of 160*87*23 mm is utilized, the discharge voltage reaches 3.7V to 4.2V, the mobile phone access current reaches 850 mA to 1000 mA, and the current is attenuated by 50% in twelve years, the thermonuclear cell can be used continuously for at least 6 years during the discharge, and the conversion efficiency of nuclear isotope reaches 25% to 30%.

The invention discloses a sandwiched parallel-connection PIN-type beta irradiation battery and a preparation method thereof. The invention mainly aims at solving problems of low energy conversion rate and low output power of current nuclear batteries. The battery comprises two PIN junctions connected in parallel and a beta radioactive source layer, wherein one PIN junction is positioned above the other. The lower PIN junction comprises, from bottom to top, an N-type ohmic contact electrode, an N-type highly doped 4H-SiC substrate, an N-type lowly doped epitaxial layer, a P-type highly doped epitaxial layer and a P-type ohmic contact electrode. The structural distribution of the upper PIN junction is opposite to that of the lower PIN junction. The beta radioactive source layer is sandwiched between the P-type ohmic contact electrodes of the upper and lower PIN junctions, such that full utilization upon high-energy beta particles can be realized. The irradiation battery provided by the invention has the advantages of large contact area between a radioactive source and a semiconductor, high nuclear raw material utilization rate, high energy collection rate, and large battery output voltage. The irradiation battery can perform long-lasting power supply for a small circuit, and can be used in power supply for occasions which need unmanned long-term powering, such as polar regions and deserts.

The invention discloses a parallel type PIN type beta irradiation battery and a preparing method thereof to mainly solve the problems that a current nuclear battery is low in energy converting ratio and output power. The parallel type PIN type beta irradiation battery comprises an upper PIN junction, a lower PIN junction and beta irradiation sources, wherein the upper PIN junction and the lower PIN junction are connected in parallel. The lower PIN junction comprises an N type ohmic contact electrode, an N type highly-doped 4H-SiC substrate, an N type lightly-doped epitaxial layer, a P type highly-doped epitaxial layer and a P type ohmic contact electrode from bottom to top in sequence, the top-to-bottom structural distribution of the PIN junction is the same as the bottom-to-top structural distribution of the lower PIN junction, a plurality of grooves are formed in each PIN junction, and the beta irradiation sources are placed in the grooves respectively. The two PIN junctions make contact with each other through the P type ohmic contact electrode, and the upper groove and the lower groove are in mirror symmetry and are communicated with each other. The parallel type PIN type beta irradiation battery has the advantages that the contact area between the irradiation sources and a semiconductor is large, the nuclear raw material utilization rate and the energy collection rate are high, and the output voltage of the battery is large, and the battery can provide power for a miniature circuit continuously or can provide power for polar regions, deserts and other areas.

The invention discloses a silicon carbide (SIC) transverse Schottky junction type mini-sized nuclear battery and a manufacturing method thereof. The nuclear battery comprises a substrate and an N type SIC outer epitaxial layer arranged on the upper portion of the substrate. The N type SIC outer epitaxial layer is provided with an N type SIC ohmic contact doped region. An ohmic contact electrode is arranged on the upper portion of N type SIC ohmic contact doped region. The upper portion of the N type SIC outer epitaxial layer is provided with a Schottky contact electrode. A silicon dioxide layer is arranged on the upper portion, except the areas of the ohmic contact electrode and the Schottky contact electrode, of the N type SIC outer epitaxial layer. The manufacturing method of the nuclear battery comprises the steps of providing the substrate; forming the N type SIC outer epitaxial layer on the substrate in an epitaxial growth mode; forming the N type SIC ohmic contact doped region; forming the silicon dioxide layer; forming the ohmic contact electrode; and forming the Schottky contact electrode; The SIC transverse Schottky junction type mini-sized nuclear battery is reasonable in design, favorable to improving energy converting efficiency and packaging density of mini-sized nuclear batteries, favorable to integration, strong in practicality, and high in popularization and utilization value.

The invention discloses a sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery and a manufacturing method thereof. The sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery and the manufacturing method thereof mainly solve the problems that an existing nuclear battery is low in energy transformation ratio and output power. The sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery comprises an upper PIN junction, a lower PIN junction and an alpha radioactive source layer, wherein the upper PIN junction and the lower PIN junction are connected in parallel. The lower PIN junction sequentially comprises a P-type ohmic contact electrode, a P-type highly-doped GaN epitaxial layer, an N-type highly-doped 4H-SiC substrate, an N-type low-doped SiC epitaxial layer and an N-type ohmic contact electrode from top to bottom, and the bottom-to-top structure of the upper PIN junction is identical to the top-to-bottom structure of the lower PIN junction. The alpha radioactive source layer is clamped between the P-type ohmic contact electrode of the upper PIN junction and the P-type ohmic contact electrode of the lower PIN junction, so that high-energy beta particles are fully utilized. The sandwich parallel-type epitaxial GaN PIN-type alpha irradiation battery and the manufacturing method thereof have the advantages that the contact area of a radioactive source and a semiconductor is large, the nuclear raw material utilization rate and the energy harvesting rate are high, and the output voltage of the battery is large; the battery can supply electricity to a small circuit enduringly or to a polar region, a desert and other occasions.