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Schottky type nuclear battery and preparation method thereof

A Schottky-type, nuclear battery technology, applied in circuits, nuclear engineering, electrical components, etc., can solve the problems of inability to meet long-term power supply, small battery energy volume, etc., to improve energy conversion efficiency, improve energy density, and prolong use. effect of life

Inactive Publication Date: 2009-09-09
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chemical batteries mainly include dry batteries, storage batteries, fuel cells, microbial batteries, etc. These are commonly used battery types in human life, but the energy capacity of such batteries is relatively small and cannot meet the needs of long-term power supply

Method used

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  • Schottky type nuclear battery and preparation method thereof
  • Schottky type nuclear battery and preparation method thereof
  • Schottky type nuclear battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Such as figure 1 The shown schematic diagram of the structural axis section of an embodiment of the nuclear battery, first prepare the Al 2 o 3 Wafers, which can be purchased from the market to obtain single-side polished 2-inch C-side β-Al 2 o 3 The substrate 1 has a thickness of 300 μm.

[0028] Then perform the Schottky wafer growth process: use MOCVD epitaxial growth equipment, first Al 2 o 3 Substrate 1 is nitrided by passing through ammonia gas at 1100°C for about 2 minutes, then cooling down to 570°C, passing through trimethylgallium and ammonia gas to epitaxially form a gallium nitride (GaN) buffer layer 7 of about 20nm, and then raising the temperature to 1150°C Controlling the silicon doping concentration at 1×10 18 / cm 3 Under stable conditions, trimethylgallium, ammonia gas and silane are introduced to epitaxy n-GaN doped layer 2 of about 2 μm, and then the sample is taken out after cooling down to room temperature; Ammonia gas and metal gallium epit...

Embodiment 2

[0031] Prepare Al first 2 o 3 Wafers, which can be purchased from the market to obtain single-side polished 2-inch C-side β-Al 2 o 3 The substrate 1 has a thickness of 400 μm.

[0032] Then perform the Schottky wafer growth process: use MOCVD epitaxial growth equipment, first raise the temperature to 1150°C and control the silicon doping concentration at 1×10 19 / cm 3 Under stable conditions, trimethylgallium, ammonia gas and silane are introduced to epitaxy n-GaN doped layer 2 of about 2 μm, and then the sample is taken out after cooling down to room temperature; Ammonia gas and metal gallium epitaxy a 20 μm GaN insulating layer 3 , and then lowered to room temperature, and samples were taken out.

[0033]Next, use ultraviolet lithography machine photolithography and ICP etching technology, obtain n-type steps on the surface of n-type GaN doped layer 2; Use magnetron sputtering technology to deposit Ti (20nm) / Al ( 20nm) / Ti(20nm) / Au(300nm) (i.e. Ti deposition 20nm, Al de...

Embodiment 3

[0036] The preparation method is the same as that of the above two examples. The battery structure can be either the single structure of Example 1 or the composite structure of Example 2. The difference of this example is that the isotope layer 6 can also use nuclear waste strontium-90 , can also realize the preparation of high-efficiency radiovoltaic effect nuclear battery.

[0037] It should be noted that in all implementations including the above three examples, the thickness of the Schottky contact electrode cannot exceed 40nm (calculated on one side for the situation described in Example 2), otherwise it will affect the nuclear battery. conversion efficiency. Moreover, different nuclear batteries can be integrated in a certain way to obtain higher voltage or current nuclear batteries to meet the needs of different situations.

[0038] From the point of view of expanding applications, the micro-energy layout (each nuclear cell is a circular surface with a diameter of 200 ...

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Abstract

The invention discloses a Schottky type nuclear battery and a preparation method thereof. The compound epitaxial technique of once MOCVD epitaxy and once HVPE epitaxy is adopted to grow and obtain a lining, i.e. a Schottky unit material structure with an n type GaN doping layer-and an insulating GaN doping layer. Then, semiconductor micro-processing is adopted for splashing and generating a corresponding contact electrode so as to form a basic battery unit. An isotope is coupled to the Schottky contact electrode, and then the nuclear battery is obtained after packaging. As the service life of the nuclear battery is determined by the half-life of the isotope, in the invention, the isotope type (pure beta isotope) with simple protection can be flexibly used so as to greatly improve the energy conversion efficiency and the energy density (energy capacity) of the nuclear battery, prolong the service life of the nuclear battery and provide an effective approach for reasonably reusing waste materials.

Description

technical field [0001] The invention relates to a semiconductor nuclear battery device, in particular to a radiation volt effect nuclear battery in a primary conversion nuclear battery, and belongs to the field of energy applications. Background technique [0002] Generally speaking, batteries include chemical batteries and physical batteries. Chemical batteries mainly include dry batteries, storage batteries, fuel cells, microbial batteries, etc. These are commonly used battery types in human life, but the energy volume of such batteries is relatively small and cannot meet the needs of long-term power supply. Physical batteries mainly include solar cells and nuclear batteries. Nuclear batteries are also called isotope batteries or atomic batteries, which are batteries that directly convert the radioactive energy of atomic nuclei into electrical energy. According to different energy sources, nuclear batteries can be divided into heat source nuclear batteries and radiation e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G21H1/00H01L21/205H01L21/283
Inventor 陆敏
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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