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Parallel type PIN type alpha irradiation battery and preparing method thereof

A parallel battery technology, applied in the field of microelectronics, can solve the problems of easy introduction of surface defects, large device leakage current, low energy conversion rate, etc., to achieve improved energy collection rate, large band gap, and good anti-radiation characteristics Effect

Inactive Publication Date: 2014-09-17
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The substrate used in this structure is a P-type highly doped substrate, and the existing process of growing an epitaxial layer on the substrate is immature, so it is easy to introduce surface defects, the leakage current of the device is large, and the energy conversion rate is low.

Method used

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  • Parallel type PIN type alpha irradiation battery and preparing method thereof
  • Parallel type PIN type alpha irradiation battery and preparing method thereof
  • Parallel type PIN type alpha irradiation battery and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Embodiment 1, preparation α radiation source is Am 241 , a parallel-connected PIN-type α-irradiated cell with two trenches.

[0041] Step 1: Make the lower PIN knot.

[0042] (1) Clean the 4H-SiC sample to remove surface pollutants, such as image 3 (a) shown.

[0043] (1.1) Set the doping concentration to lx10 18 cm -3 Highly doped n-type 4H-SiC substrate sample in NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0044] (1.2) Use HCl+H to remove the 4H-SiC sample after removing the surface organic residue 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove ionic pollutants.

[0045] (2) Epitaxial growth of N-type low-doped epitaxial layer, such as image 3 (b) shown.

[0046] A nitrogen-doped N-type doped epitaxial layer is epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions ar...

Embodiment 2

[0064] Embodiment 2, preparation α radiation source is Am 241 , a parallel-connected PIN-type α-irradiated cell with five trenches.

[0065] Step 1: Make the lower PIN knot.

[0066] 1) Clean the 4H-SiC sample to remove surface contaminants, such as image 3 (a).

[0067] This step is the same as step (1) of Example 1.

[0068] 2) Epitaxial growth of N-type low-doped epitaxial layer, such as image 3 (b).

[0069] A nitrogen-doped N-type doped epitaxial layer is epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are: epitaxy temperature is 1570°C, pressure is 100mbar, reaction gas is silane and propane, carrier gas is pure hydrogen, magazine source is liquid nitrogen, and the concentration of nitrogen doping is 1.5x10 15 cm -3 , the growth of an N-type low-doped epitaxial layer with a thickness of 8 μm.

[0070] 3) Epitaxial growth of P-type highly doped epitaxial layer, such as image 3 (c) shown.

[0071] On the gro...

Embodiment 3

[0084] Embodiment 3, preparation α radiation source is Pu 238 , a parallel-connected PIN-type α-irradiated cell with 10 trenches.

[0085] Step A: Make the upper PIN knot.

[0086] (A1) Clean the 4H-SiC sample to remove surface contaminants, such as image 3 (a).

[0087] This step is the same as step (1) of Example 1.

[0088] (A2) Epitaxially grow a nitrogen-doped N-type low-doped epitaxial layer on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the magazine source is liquid nitrogen. A nitrogen doping concentration of 2x10 15 cm -3 , the N-type low-doped epitaxial layer with a thickness of 10 μm such as image 3 (b).

[0089] (A3) On the grown N-type low-doped epitaxial layer, a P-type highly-doped epitaxial layer doped with aluminum ions is epitaxially grown by chemical vapor deposit...

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Abstract

The invention discloses a parallel type PIN type alpha irradiation battery and a preparing method thereof to mainly solve the problems that a current nuclear battery is low in energy converting ratio and output power. The parallel type PIN type alpha irradiation battery comprises an upper PIN junction, a lower PIN junction and alpha irradiation sources, wherein the upper PIN junction and the lower PIN junction are connected in parallel, the lower PIN junction comprises an N type ohmic contact electrode, an N type highly-doped 4H-SiC substrate, an N type lightly-doped epitaxial layer, a P type highly-doped epitaxial layer and a P type ohmic contact electrode from bottom to top in sequence, the top-to-bottom structural distribution of the PIN junction is the same as the bottom-to-top structural distribution of the lower PIN junction, at least two grooves are formed in each PIN junction, and the alpha irradiation sources are placed in the grooves respectively. The two PIN junctions make contact with each other through the P type ohmic contact electrode, and the upper groove and the lower groove are in mirror symmetry and are communicated with each other. The parallel type PIN type alpha irradiation battery has the advantages that the contact area between the irradiation sources and a semiconductor is large, the nuclear raw material utilization rate and the energy collection rate are high, and the output voltage of the battery is large, and the battery can provide power for a small circuit continuously or can provide power for polar regions, deserts and other areas.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a semiconductor device structure and a preparation method, specifically a silicon carbide-based parallel PIN type α irradiation battery and a preparation method thereof, which can be used in micro-circuits such as micro-nano electromechanical systems and aerospace , deep sea, polar regions and other occasions that require long-term power supply and are unattended. technical background [0002] With people's demand for low power consumption, long life, high reliability and small size power supply equipment, as well as concerns about nuclear waste disposal, micronuclear batteries have become more and more popular. Due to its outstanding characteristics, micronuclear batteries can be used to solve the long-term power supply problems of micropipe robots, implanted microsystems, wireless sensor node networks, artificial cardiac pacemakers, and portable mobile electronics. And it is expe...

Claims

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Application Information

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IPC IPC(8): G21H1/06
Inventor 郭辉赵亚秋王悦湖张艺蒙张玉明
Owner XIDIAN UNIV
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