Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

40results about How to "Small energy attenuation" patented technology

Multi-component and single-core-shell structured positive electrode material of lithium ion battery and preparation method

ActiveCN105895856AImprove other electrochemical propertiesImprove securityNon-aqueous electrolyte accumulator electrodesSpinelSodium-ion battery
The invention provides a multi-component and single-core-shell structured positive electrode material of a lithium ion battery. The positive electrode material comprises a shell and a core arranged in the shell, wherein the core comprises at least two kinds of components; the material of each component is selected from one kind of a positive electrode active material with a laminated structure, a positive electrode active material with a spinel structure, and a positive electrode active material with an olivine structure; the material of the shell is selected from at least two kinds of the materials selected from the positive electrode active material with the laminated structure, the positive electrode active material with the spinel structure, and the positive electrode active material with the olivine structure; the positive electrode active material with the laminated structure comprises <x>Li<2>MO<3>.(1-x)LiMO<2>, wherein x is greater than or equal to 0 and less than 1; the positive electrode active material with the spinel structure comprises LiM<2>O<4>; and the positive electrode active material with the olivine structure comprises LiMPO<4>, wherein M is selected from one or more of metal elements with the atomic number of greater than six. The invention also provides a preparation method for the positive electrode material of the lithium ion battery.
Owner:ZHEJIANG MEIDARUI NEW MATERIAL TECH CO LTD

Random polarized laser splitting device and method

ActiveCN104259657ASmall energy attenuationHigh utilization of total powerLaser beam welding apparatusPhysicsOptical path
The invention relates to a random polarized laser splitting device and method. A laser output light path is provided with a first three-dimensional PBS (Polarization Beam Splitter); a first total reflection mirror and a second total reflection mirror are arranged at a light beam transmission output end and a light beam reflection output end of the first three-dimensional PBS respectively; a light beam reflection output end of each total reflection mirror is provided with a second three-dimensional PBS; a horizontal emergent end of the second three-dimensional PBS is provided with a third half lambda slide and a third three-dimensional PBS; a horizontal emergent end of the third three-dimensional PBS is provided with a fourth half lambda slide and a fourth three-dimensional PBS; a vertical emergent end of the fourth three-dimensional PBS is provided with a power meter; a vertical emergent end of the second three-dimensional PBS, a vertical emergent end of the third three-dimensional PBS and the vertical emergent end of the fourth three-dimensional PBS are provided with a quarter lambda slide and a focusing mirror respectively. Accordingly, the control accuracy of the beam splitting energy can be significantly improved and the expansion of the number of the beam splitting is facilitated.
Owner:SUZHOU DELPHI LASER +1

High-energy acoustic beam regulation and control device for residual stress of annular workpiece

The invention discloses a high-energy acoustic beam regulation and control device for residual stress of an annular workpiece. The high-energy acoustic beam regulation and control device comprises excitation wedge blocks, high-energy acoustic beam exciters, exciter mounting plates, fixing bolts, a triangular support frame, puller bolts, mounting bolts and a base, wherein the triangular support frame is fixed on the base through the mounting bolts, the upper part and the lower part of the triangular support frame are each provided with three threaded holes, 18 high-energy acoustic beam exciter mounting holes are evenly arranged in the circumferential direction, the puller bolts penetrate through the threaded holes to abut against the exciter mounting plates, the exciter mounting plates are each an arc-shaped plate, the 6 exciter mounting plates are arranged in the circumferential direction, the excitation wedge blocks are installed on the exciter mounting plates through the fixing bolts, the exciters are connected together through tail threads of the excitation wedge blocks, the front end of the excitation wedge block is an arc-shaped surface, and lubricating grease is smeared between the arc-shaped surface of the excitation wedge block and an annular workpiece. All the exciters and the annular workpiece can be integrally and tightly attached, energy attenuation is reduced, the conduction efficiency is improved, and efficient integral regulation and control of the residual stress of the annular workpiece are achieved.
Owner:NANJING CHENGUANG GRP

3D type PIN structure alpha irradiation battery and manufacturing method thereof

The invention discloses a 3D type PIN structure alpha irradiation battery and a manufacturing method of the 3D type PIN structure alpha irradiation battery. The 3D type PIN structure alpha irradiation battery and the manufacturing method mainly solve the problems that an existing alpha irradiation battery is low in energy conversion rate and output power. The manufacturing method includes the implementation steps of sequentially growing an N type lightly-doped 4H-SiC epitaxial layer and a P type highly-doped 4H-SiC epitaxial layer on a washed 4H-SiC substrate in an epitaxial mode, forming ohmic contact electrodes on the non-epitaxial back face of the P type highly-doped epitaxial layer and the non-epitaxial back face of the SiC substrate through deposition, conducting photoetching on the P type ohmic contact electrodes to obtain groove windows, conducting etching to obtain grooves, and placing alpha irradiation sources in the grooves to obtain the 3D type PIN structure alpha irradiation battery. The 3D type PIN structure alpha irradiation battery manufactured according to the method has the advantages that the contact area between the alpha irradiation battery and the alpha irradiation sources is large, the nuclear raw material utilization rate and the energy collection rate are high, and the battery output current and the battery output voltage are large; the 3D type PIN structure alpha irradiation battery can unceasingly supply power for miniature circuits or can supply power on the occasions where long-time power supply is needed but not unmanned.
Owner:XIDIAN UNIV

Parallel type PIN type beta irradiation battery and preparing method thereof

The invention discloses a parallel type PIN type beta irradiation battery and a preparing method thereof to mainly solve the problems that a current nuclear battery is low in energy converting ratio and output power. The parallel type PIN type beta irradiation battery comprises an upper PIN junction, a lower PIN junction and beta irradiation sources, wherein the upper PIN junction and the lower PIN junction are connected in parallel. The lower PIN junction comprises an N type ohmic contact electrode, an N type highly-doped 4H-SiC substrate, an N type lightly-doped epitaxial layer, a P type highly-doped epitaxial layer and a P type ohmic contact electrode from bottom to top in sequence, the top-to-bottom structural distribution of the PIN junction is the same as the bottom-to-top structural distribution of the lower PIN junction, a plurality of grooves are formed in each PIN junction, and the beta irradiation sources are placed in the grooves respectively. The two PIN junctions make contact with each other through the P type ohmic contact electrode, and the upper groove and the lower groove are in mirror symmetry and are communicated with each other. The parallel type PIN type beta irradiation battery has the advantages that the contact area between the irradiation sources and a semiconductor is large, the nuclear raw material utilization rate and the energy collection rate are high, and the output voltage of the battery is large, and the battery can provide power for a miniature circuit continuously or can provide power for polar regions, deserts and other areas.
Owner:XIDIAN UNIV

Arc striking device of electric welding machine and arc striking method thereof

The invention belongs to the technical field of electric welding machines, and particularly relates to an arc striking device of an electric welding machine and an arc striking method thereof. The arcstriking method comprises the following steps that S1, workpieces to be welded are placed on a base I, and the workpieces are pressed through a fixing plate; the distance between the two workpieces is adjusted through an air cylinder III; and test blocks made of the same material are placed in a test clamping groove; S2, on the basis of S1, a power supply is switched on, an arc striking box is started, a tungsten electrode is controlled to be close to the test blocks, and the arc striking effect is tested; S3, after S2 is completed, the test blocks are taken down, and the distance between thetungsten electrode and the workpieces is adjusted; S4, on the basis of S3, the angle of the welding position of the tungsten electrode and the workpieces is adjusted; and S5, whether a welding wire is used or not is selected according to the material of the welding workpieces, and when the welding wire is used, the welding wire is sent to a welding position, a motor is controlled to operate, a protection plate is enabled to be close to the tungsten electrode, and protective gas is introduced and released. The arc striking device is good in arc striking effect, stable in work, reliable in performance and safe to use.
Owner:ZHEJIANG LAOSHIDUN WELDING EQUIP

Device and method for splitting randomly polarized laser light

The invention relates to a random polarized laser splitting device and method. A laser output light path is provided with a first three-dimensional PBS (Polarization Beam Splitter); a first total reflection mirror and a second total reflection mirror are arranged at a light beam transmission output end and a light beam reflection output end of the first three-dimensional PBS respectively; a light beam reflection output end of each total reflection mirror is provided with a second three-dimensional PBS; a horizontal emergent end of the second three-dimensional PBS is provided with a third half lambda slide and a third three-dimensional PBS; a horizontal emergent end of the third three-dimensional PBS is provided with a fourth half lambda slide and a fourth three-dimensional PBS; a vertical emergent end of the fourth three-dimensional PBS is provided with a power meter; a vertical emergent end of the second three-dimensional PBS, a vertical emergent end of the third three-dimensional PBS and the vertical emergent end of the fourth three-dimensional PBS are provided with a quarter lambda slide and a focusing mirror respectively. Accordingly, the control accuracy of the beam splitting energy can be significantly improved and the expansion of the number of the beam splitting is facilitated.
Owner:SUZHOU DELPHI LASER +1

Epitaxy GaN parallel type PIN type alpha irradiation battery and manufacturing method thereof

The invention discloses an epitaxy GaN parallel type PIN type alpha irradiation battery and a manufacturing method of the epitaxy GaN parallel type PIN type alpha irradiation battery. The epitaxy GaN parallel type PIN type alpha irradiation battery mainly solves the problem that the current nuclear battery energy conversion rate and output power are low and comprises an upper PIN node, a lower PIN node and alpha irradiation sources, the upper PIN node and the lower PIN node are in parallel connection, the lower PIN node sequentially comprises an N-type ohmic contact electrode, an N-type highly-doped 4H-SiC substrate, an N-type lowly-doped SiC epitaxial layer, a P-type highly-doped GaN epitaxial layer and a P-type ohmic contact electrode from bottom to top, and the bottom-to-top structural distribution of the upper PIN node is the same as that of the lower PIN node. A plurality of grooves are formed in each PIN node, the alpha irradiation sources are arranged in the grooves respectively, the two PIN nodes are in contact through the P-type ohmic contact electrode, and the upper grooves and the lower grooves are in mirror symmetry and are communicated. The epitaxy GaN parallel type PIN type alpha irradiation battery has the advantages that the contact area between the irradiation sources and a semiconductor is large, the utilization and the energy collecting rate of the nuclear raw materials are high, and the output voltage of the battery is high, and a microcircuit can be constantly powered up.
Owner:XIDIAN UNIV

Epitaxy GaN PIN structure beta irradiation battery and preparation method thereof

The invention discloses an epitaxy GaN PIN structure beta irradiation battery and a preparation method thereof. At present, a beta irradiation battery has problems of low energy transformation ratio and low output power, and the invention is mainly used to solve the problems. The implementation of the epitaxy GaN PIN structure beta irradiation battery comprises the following steps: an N-type lightly-doped SiC epitaxial layer and a P-type highly-doped GaN epitaxial layer are grown on a cleaned 4H-SiC substrate successively in the epitaxial growth manner; a P-type Ti/Au ohmic contact electrode is then deposited onto the P-type highly-doped GaN epitaxial layer, and an Ni contact electrode is deposited onto the back surface of the SiC substrate which does not undergo the epitaxy growth; and then, a trench window is formed in the P-type Ti/Au electrode through lithography, and trenches are etched; and finally, a beta radiation source is placed into each trench to obtain the epitaxy GaN PIN structure beta irradiation battery. According to the invention, the fabricated battery has advantages of large radiation source and semiconductor contact area, high nuclear raw material utilization rate and energy collection rate, and large battery output current and voltage, and the battery can be used to supply power to a small circuit in a lasting manner or supply power in unattended occasions which need to be powered for a long time.
Owner:XIDIAN UNIV

Double-arc Chinese zither

The invention discloses a double-arc Chinese zither in the field of plucked instruments. The double-arc Chinese zither includes a hollow resonance body consisting of a face plate of upper part, a base plate of lower part, end plates at two ends and front and back side plates. Three ways of bass bars are vertically arranged in the resonance body with a certain spaced distance; a sound hole is arranged in the base plate; the face plate presents upward and raised arc transition from the front side plate to the back side plate and is provided with a Chinese zither horse, a plurality of strings are erected on the Chinese zither horse and fixed with the resonance body at two ends; the diameter of strings gradually thins from the front side plate to the back side plate; and the base plate also presents upward and raised arc transition from the front side plate to the back side plate. In fabrication, the base plate is formed by bending a flat plate, after the Chinese zither is made, the upper surface of the base plate is in a stretching and tension state, has stronger elasticity and can cause sound wave to be better reflected and resounded in the resonance body; acoustic energy attenuates slightly for long time; as the base plate can better coordinate with the face plate for resonance, the timbre of the Chinese zither becomes clearer and more far-reaching, mellower and more lingering. According to the technical proposal, a high-grade Chinese zither can be made.
Owner:田步高

Half-duplex communication device based on lamb wave and communication method thereof

The invention discloses a half-duplex communication device based on a lamb wave and a communication method thereof. The half-duplex communication device based on the lamb wave comprises the components of a sensor master control module, a first signal processing circuit, a first transducer, a metal sheet member, a second transducer, a second signal processing circuit and a controller. According to the half-duplex communication device, the lamb wave in the metal sheet member is used as a signal carrier; the metal sheet member is used as a transmission medium; half-duplex communication is performed in a wireless manner; and a communication function is supplied for a data result of a sensor for structure health monitoring on the metal sheet member. The half-duplex communication device and the communication method thereof have advantages of reducing data transmission wiring and maintenance cost in a traditional sensor system, changing a traditional electromagnetic signal transmission method, realizing high suitability for multiple occasions, and improving stability of the whole system. Furthermore the half-duplex communication device and the communication method have advantages of small size, low cost, low energy attenuation, high transmission efficiency and long transmission distance.
Owner:TIANJIN UNIV

3D type pin structure α irradiation battery and preparation method thereof

The invention discloses a 3D type PIN structure alpha irradiation battery and a manufacturing method of the 3D type PIN structure alpha irradiation battery. The 3D type PIN structure alpha irradiation battery and the manufacturing method mainly solve the problems that an existing alpha irradiation battery is low in energy conversion rate and output power. The manufacturing method includes the implementation steps of sequentially growing an N type lightly-doped 4H-SiC epitaxial layer and a P type highly-doped 4H-SiC epitaxial layer on a washed 4H-SiC substrate in an epitaxial mode, forming ohmic contact electrodes on the non-epitaxial back face of the P type highly-doped epitaxial layer and the non-epitaxial back face of the SiC substrate through deposition, conducting photoetching on the P type ohmic contact electrodes to obtain groove windows, conducting etching to obtain grooves, and placing alpha irradiation sources in the grooves to obtain the 3D type PIN structure alpha irradiation battery. The 3D type PIN structure alpha irradiation battery manufactured according to the method has the advantages that the contact area between the alpha irradiation battery and the alpha irradiation sources is large, the nuclear raw material utilization rate and the energy collection rate are high, and the battery output current and the battery output voltage are large; the 3D type PIN structure alpha irradiation battery can unceasingly supply power for miniature circuits or can supply power on the occasions where long-time power supply is needed but not unmanned.
Owner:XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products