40results about How to "Small energy attenuation" patented technology

The invention relates to a compensation method for improving color shadow in digital images, which is used for correcting the luminance difference of each area in the digital images caused by color shadow in the digital images. The compensation method comprises the following steps of: retrieving the color lump images of uniform color lumps; calculating the horizontal compensation coefficients of a plurality of horizontal areas of the color lump images; carrying out linear interpolation on the horizontal compensation coefficients to generate corresponding horizontal interpolation coefficients and calculating to obtain the decision horizontal correction coefficients corresponding to all horizontal areas, respectively; calculating the vertical compensation coefficients of a plurality of vertical areas of the color lump images; multiplying the decision horizontal correction coefficients with the vertical compensation coefficients to obtain the color shadow compensation coefficients of the areas of the color lump images, respectively; and multiplying the average luminance values of the areas of the color lump images with corresponding color shadow compensation coefficients, respectively to compensate the color shadow for the color lump images.

The invention relates to a bulk silicon MEMS waveguide combining method for space wave mixing in terahertz frequency band, and belongs to the technical field of terahertz wave mixing receiving front-end. The method introduces bulk silicon MEMS technology to manufacture a terahertz local oscillator signal receiving antenna, a terahertz signal receiving antenna to be measured and a waveguide duplexer. The waveguide duplexer superimposes the received terahertz local oscillator signal and the electrical signal of the signal to be measured, and outputs the waveguide input to the terahertz mixer through the waveguide duplexer, and at the same time isolates the terahertz local oscillator signal receiving antenna from the terahertz receiver. Test signal receiving antenna. This method replaces the optical splitter film combining method with obvious loss in the common terahertz space wave mixing system under the situation that both the terahertz local oscillator signal and the signal to be measured are in the form of space radiation waves; it realizes the integration and integration of system design. to improve the receiving sensitivity of the system.

The invention relates to a random polarized laser splitting device and method. A laser output light path is provided with a first three-dimensional PBS (Polarization Beam Splitter); a first total reflection mirror and a second total reflection mirror are arranged at a light beam transmission output end and a light beam reflection output end of the first three-dimensional PBS respectively; a light beam reflection output end of each total reflection mirror is provided with a second three-dimensional PBS; a horizontal emergent end of the second three-dimensional PBS is provided with a third half lambda slide and a third three-dimensional PBS; a horizontal emergent end of the third three-dimensional PBS is provided with a fourth half lambda slide and a fourth three-dimensional PBS; a vertical emergent end of the fourth three-dimensional PBS is provided with a power meter; a vertical emergent end of the second three-dimensional PBS, a vertical emergent end of the third three-dimensional PBS and the vertical emergent end of the fourth three-dimensional PBS are provided with a quarter lambda slide and a focusing mirror respectively. Accordingly, the control accuracy of the beam splitting energy can be significantly improved and the expansion of the number of the beam splitting is facilitated.

The invention belongs to the technical field of chemical printing ink, and specifically relates to an aqueous toughened glass printing ink dedicated for touch screen and a preparation method thereof. The aqueous toughened glass printing ink is prepared from the following raw materials in parts by weight: 6 to 28 parts of inorganic pigment, 20 to 50 parts of first glass powder frit, 10 to 40 parts of second glass powder frit, 10 to 60 parts of aqueous varnish, 0 to 2 parts of wetting dispersant, 0 to 1 part of antifoaming agent, and 0 to 2 parts of leveling agent. The printing ink can improve the surface acoustic wave signal transduction performance of touch screen glass, solves the problem that after surface acoustic waves go through tough screen glass, the signal attenuates, and has the advantages that the covering performance of the printing ink is good, the surface acoustic wave propagation speed is quick, the energy attenuation is little, no phase change happens, and the corrosion of the printing ink is weak.

The invention discloses a 3D type PIN structure alpha irradiation battery and a manufacturing method of the 3D type PIN structure alpha irradiation battery. The 3D type PIN structure alpha irradiation battery and the manufacturing method mainly solve the problems that an existing alpha irradiation battery is low in energy conversion rate and output power. The manufacturing method includes the implementation steps of sequentially growing an N type lightly-doped 4H-SiC epitaxial layer and a P type highly-doped 4H-SiC epitaxial layer on a washed 4H-SiC substrate in an epitaxial mode, forming ohmic contact electrodes on the non-epitaxial back face of the P type highly-doped epitaxial layer and the non-epitaxial back face of the SiC substrate through deposition, conducting photoetching on the P type ohmic contact electrodes to obtain groove windows, conducting etching to obtain grooves, and placing alpha irradiation sources in the grooves to obtain the 3D type PIN structure alpha irradiation battery. The 3D type PIN structure alpha irradiation battery manufactured according to the method has the advantages that the contact area between the alpha irradiation battery and the alpha irradiation sources is large, the nuclear raw material utilization rate and the energy collection rate are high, and the battery output current and the battery output voltage are large; the 3D type PIN structure alpha irradiation battery can unceasingly supply power for miniature circuits or can supply power on the occasions where long-time power supply is needed but not unmanned.

The invention relates to a semiconductor film field effect transistor made of an unstable two-dimensional material and a preparation method thereof. The field effect transistor sequentially comprisesa silicon wafer substrate, the unstable two-dimensional material, an aluminum oxide film, a source electrode and a drain electrode from bottom to top. According to the method, the unstable two-dimensional material in the air and the solvent can be obtained through a simple method, and a small-size electronic device can be obtained through the micro-nano machining technology, moreover, the field effect mobility can reach the level of the hard mask process, and the yield is higher. For an InSe film, the highest field effect mobility exceeds 550 cm<2> / Vs. A device channel is protected by a packaging buffer layer at the same time, and the performance is not reduced in the air environment as long as 60 days. The aluminum oxide packaging buffer layer is stable and transparent, and can be appliedto further manufacturing of photoelectric micro-nano devices, and the electric hysteresis phenomenon is small (less than 1V).