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Epitaxy GaN PIN structure beta irradiation battery and preparation method thereof

A battery and epitaxy technology, applied in the field of microelectronics, can solve the problems of low utilization rate of high-energy particles, large leakage current of devices, low energy conversion rate, etc., to improve energy collection rate, large forbidden band width, and good radiation resistance characteristics. Effect

Inactive Publication Date: 2014-09-24
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this structure, the radioactive source 7 is placed on the P-type highly doped layer 3, and the high-energy particles emitted by the radioactive source need to penetrate the P-type highly-doped SiC layer 3 to reach the space charge region of the PIN junction, so that the high-energy particles can be utilized low rate
In addition, this structure uses a P-type highly doped substrate, and the existing process of growing an epitaxial layer on the substrate is not mature, so it is easy to introduce surface defects, the device leakage current is large, and the energy conversion rate is low.

Method used

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  • Epitaxy GaN PIN structure beta irradiation battery and preparation method thereof
  • Epitaxy GaN PIN structure beta irradiation battery and preparation method thereof
  • Epitaxy GaN PIN structure beta irradiation battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Embodiment 1, preparation β radiation source is Ni 63 , a PIN-structured β-irradiated cell of epitaxial GaN with two trenches.

[0038] Step 1: Wash the 4H-SiC sample to remove surface contaminants such as image 3 (a) shown.

[0039] (1.1) Set the doping concentration to lx10 18 cm -3 Highly doped n-type 4H-SiC substrate sample in NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0040] (1.2) Use HCl+H to remove the 4H-SiC sample after removing the surface organic residue 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove ionic pollutants.

[0041] Step 2: Epitaxial growth of N-type low-doped SiC epitaxial layer, such as image 3 (b) shown.

[0042] A nitrogen-doped N-type doped epitaxial layer with a thickness of 5 μm was epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are ...

Embodiment 2

[0059] Embodiment 2, preparation β radiation source is Ni 63 , a PIN-structured β-irradiated cell of epitaxial GaN with eight trenches.

[0060] Step 1: Clean the 4H-SiC sample to remove surface contaminants such as image 3 (a).

[0061] This step is the same as Step 1 of Example 1.

[0062] Step 2: Epitaxial growth of N-type low-doped SiC epitaxial layer, such as image 3 (b).

[0063] A nitrogen-doped N-type doped epitaxial layer with a thickness of 8 μm was epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are: epitaxy temperature is 1570°C, pressure is 100mbar, reaction gas is silane and propane, carrier gas is pure hydrogen, magazine source is liquid nitrogen, and the concentration of nitrogen doping is 1.5x10 15 cm -3 The growth of the N-type epitaxial layer.

[0064] Step 3: Epitaxial growth of P-type highly doped GaN epitaxial layer, such as image 3 (c).

[0065] (3.1) Put the sample after growing the N-type...

Embodiment 3

[0077] Embodiment 3, preparation β radiation source is Pm 147 , a PIN-structured β-irradiated cell with epitaxial GaN with 16 trenches.

[0078] Step A: cleaning 4H-SiC sample, to remove surface pollutants, this step is the same as step 1 of embodiment 1, such as image 3 (a).

[0079] Step B: epitaxially grow a nitrogen-doped N-type doped epitaxial layer with a thickness of 10 μm on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the magazine source is liquid nitrogen. The resulting nitrogen doping concentration is 3x10 15 cm -3 The N-type epitaxial layer such as image 3 (b).

[0080] Step C: Put the sample after growing the N-type low-doped SiC epitaxial layer into the chemical vapor deposition CVD furnace, under H 2 Heated to 1100°C under atmosphere and kept for 10 minutes; then set ...

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Abstract

The invention discloses an epitaxy GaN PIN structure beta irradiation battery and a preparation method thereof. At present, a beta irradiation battery has problems of low energy transformation ratio and low output power, and the invention is mainly used to solve the problems. The implementation of the epitaxy GaN PIN structure beta irradiation battery comprises the following steps: an N-type lightly-doped SiC epitaxial layer and a P-type highly-doped GaN epitaxial layer are grown on a cleaned 4H-SiC substrate successively in the epitaxial growth manner; a P-type Ti / Au ohmic contact electrode is then deposited onto the P-type highly-doped GaN epitaxial layer, and an Ni contact electrode is deposited onto the back surface of the SiC substrate which does not undergo the epitaxy growth; and then, a trench window is formed in the P-type Ti / Au electrode through lithography, and trenches are etched; and finally, a beta radiation source is placed into each trench to obtain the epitaxy GaN PIN structure beta irradiation battery. According to the invention, the fabricated battery has advantages of large radiation source and semiconductor contact area, high nuclear raw material utilization rate and energy collection rate, and large battery output current and voltage, and the battery can be used to supply power to a small circuit in a lasting manner or supply power in unattended occasions which need to be powered for a long time.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a semiconductor device structure and a preparation method, in particular to a silicon carbide-based epitaxial GaN PIN structure beta irradiation battery and a preparation method thereof, which can be used in micro-circuits such as micro-nano electromechanical systems and aviation Aerospace, deep sea, polar regions and other occasions that require long-term power supply and are unattended. technical background [0002] With people's demand for low power consumption, long life, high reliability and small size power supply equipment, as well as concerns about nuclear waste disposal, micronuclear batteries have become more and more popular. Due to its outstanding characteristics, micronuclear batteries can be used to solve the long-term power supply problems of micropipe robots, implanted microsystems, wireless sensor node networks, artificial cardiac pacemakers, and portable mobile ele...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G21H1/06
Inventor 郭辉黄海栗王悦湖宋庆文张玉明
Owner XIDIAN UNIV
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