The invention discloses a
perovskite thin film heterostructure with a low ASE threshold value, a preparation method of the
perovskite thin film heterostructure and a
laser, and relates to the technical field of
perovskite lasers. The perovskite thin film heterostructure comprises a perovskite thin film and
colloidal quantum dots arranged on the perovskite thin film or doped in the perovskite thin film, the perovskite thin film can generate
gain laser of a second preset
wavelength under excitation of pumping
laser of a first preset
wavelength, and the light emitting
wavelength of the
colloidal quantum dots is located between the first preset wavelength and the second preset wavelength. And an
energy level gradient is formed between the colloidal
quantum dot layer and the perovskite thin film. When the
colloidal quantum dots are excited by pumping laser to generate a large number of carriers, the carriers are driven by
energy level gradient to be injected into the perovskite thin film, the
energy transfer process is faster than the excited
radiation process of perovskite, the
energy transfer process can serve as a part of the
population inversion number of the perovskite thin film, the achievement of particle inversion conditions required by
amplified spontaneous emission is promoted, and the performance of the perovskite thin film is improved. Therefore, the threshold value of
gain laser generated by the perovskite thin film is reduced.