22 results about "Radiation process" patented technology

A process flow for bonding a die to a substrate incorporates defect risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow can include a radiation process on the component substrate to weaken an adhesive bond of the die from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean the die bonding side, an eject and pick process after performing the first wet clean process to remove the die from the component substrate for bonding to the substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean the substrate bonding side of the substrate, and a hybrid bonding process to bond the die bonding side of the die to the substrate bonding side of the substrate.

The invention provides a PVDF-based elastic ferroelectric material and a preparation method and application thereof, and relates to the technical field of ferroelectric materials. A ferroelectric crystal phase region of the PVDF-based elastic ferroelectric material is protected to the maximum extent, and a uniform three-dimensional elastic network structure formed by firm C-C bonds is constructed in an amorphous region by a PVDF-based ferroelectric polymer and a crosslinking sensitizer through radiation crosslinking; the PVDF-based elastic ferroelectric material has excellent ferroelectricity, great flexibility and elasticity, proper strength and excellent fatigue resistance at the same time. According to the preparation method of the PVDF-based elastic ferroelectric material, the technical bottlenecks of thermal crosslinking and photo-crosslinking are fundamentally overcome through a mild, pure and uniform radiation process, so that controllable preparation of the PVDF-based elastic ferroelectric material with excellent ferroelectricity, great flexibility and elasticity, proper strength and excellent fatigue resistance becomes reality; the preparation method is simple, efficient and high in universality, and is very suitable for large-scale industrial production.

The invention discloses an in-vitro prediction method for cell DNA damage caused by simulated radiation. According to the invention, by introducing the bionic oxidative stress regulation and control module, the simulation precision of the in-vitro model on the in-vivo physiological microenvironment is improved. The dynamic microenvironment intervention system can respond to oxidative stress changes in the radiation process in real time, the redox state of cells is closer to an in-vivo real radiation exposure scene by precisely regulating and controlling the perfusion rate of the active oxygen scavenger, experimental deviation caused by out-of-control oxidative stress level in traditional static culture is avoided, and the experimental accuracy is improved. A more reliable physiological basis is provided for subsequent damage signal detection, a dynamic regulation and control mechanism of the micro-fluidic chip can effectively correct baseline drift caused by oxidative stress fluctuation, and it is ensured that damage site space distribution data captured by the nano biosensor array has a higher signal-to-noise ratio; the influence of external environment interference on experimental data is reduced, and high-quality original data support is provided for follow-up repair trajectory tracking and neural network prediction.

The application discloses a kind of graphical substrate and its preparation method, LED epitaxial wafer.Preparation method includes: providing sapphire substrate;Sapphire substrate includes the substrate body and metal ion doping layer being arranged in layers, and the side surface of metal ion doping layer deviating from substrate body is sapphire substrate front;Mask layer is formed on sapphire substrate front;Using exposure developing process, mask layer is patterned to form mask pattern;Based on mask pattern, using dry etching process, sapphire substrate is etched to form multiple protruding structures on sapphire substrate front, and metal ions are doped in protruding structure.This application, metal ion doping layer can absorb light into sapphire substrate inside when exposure, avoid appearing secondary exposure phenomenon, improve mask pattern uniformity;Metal ion doped in protruding structure, can adjust the carrier concentration of epitaxial film layer, reduce the non-radiation process of extra electron in chip, improve the overall performance of chip.

A method for producing a polymeric compound with a positive temperature coefficient (PPTC) and for conformally applying such a compound to a substrate according to an embodiment of the present disclosure may include producing and mixing raw materials to form a PPTC mixture, processing the PPTC mixture by a polymer compounding plant, wherein the PPTC mixture is heated and extruded as a PPTC compound, performing a radiation process on the polymer compound to produce cross-linking between the polymer chains in the PPTC compound, and applying the PPTC compound to a substrate using a hot application process in which the PPTC compound is heated and conformally applied to a surface of the substrate.

A process flow for bonding a die to a substrate incorporates defectivity risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow may include a radiation process on a component substrate to weaken an adhesive bonding of dies from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean die bonding surfaces, eject and pick processes after performing the first wet clean process to remove dies from the component substrate for bonding to a substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean a substrate bonding surface of the substrate, and a hybrid bonding process to bond die bonding surfaces of the dies to the substrate bonding surface of the substrate.

The invention relates to an automatic treatment field segmentation method for controlling a treatment time in a plan. The method comprises defining a radiation field associated with an initially defined radiation process; automatically segmenting the radiation field into a plurality of N sub-fields based on a set of criteria, wherein N > 2 and n e N, said set of criteria comprising at least a time limit associated with a duration of the radiation process for at least one of the N sub-fields; and providing a radiation beam configuration to control a radiation device adapted to provide the radiation process associated with the segmented radiation field.

This invention proposes an air intake assembly and a water heater. The air intake assembly includes: a housing, the housing including a silencing cavity; an air inlet disposed on the housing and connected to the silencing cavity; a vent disposed on the housing and connected to the silencing cavity; and an air guide plate disposed on the housing, located inside the silencing cavity, opposite to the air inlet, and used for airflow guidance. The air intake assembly provided in this application, by distributing an air guide plate opposite to the air inlet within the silencing cavity, cuts off the direct connection between the air inlet and the vent. This allows noise from the gas water heater during operation to enter the silencing cavity through the vent and radiate to the air guide plate. The air guide plate then prevents some noise from escaping through the air inlet, thus extending the radiation path of the generated noise to the outside and significantly attenuating the noise after being blocked, thereby achieving the purpose of noise reduction.

The invention provides a multi-mode identification tag for a library and a book identification method. According to the application, the graphene pattern is superposed on the radio frequency unit, so that on one hand, the first identification information of the book can be independently obtained through a radio frequency interaction mode so as to determine the identification code of the book; on the other hand, corresponding phase components can be superposed in the radiation process of the radio-frequency signal through charge distribution excited by the graphene pattern, so that second identification information of the book can be independently obtained through phase information of the radio-frequency signal; and the identification information is utilized to realize automatic identification of book collection positions, storage requirements or other management information. According to the antenna, independent coding of the management information corresponding to the book can be flexibly realized through a photosensitive material coating mode according to management requirements, important management information can be directly prompted under the condition that a book management system is not searched, and an operator can conveniently and directly carry out corresponding maintenance management on the book. The multi-mode identification tag provided by the invention can be flexibly updated according to management requirements, so that more flexibility and convenience are brought to book management work.

This invention provides a radiation dose measurement method based on a floating-gate semiconductor transistor, primarily addressing the technical problem that existing technologies cannot accurately measure the radiation dose of floating-gate semiconductor transistors. The invention employs a method of measuring the voltage after charging the transistor under test (TUT) and then measuring it after irradiation. Based on a constant current method, it obtains the difference in threshold voltage between the TUT and its pre-irradiation values. Using this method, it obtains the difference in threshold voltage under different radiation doses and finally calculates the curve of the difference in threshold voltage as a function of cumulative radiation dose. This invention involves multiple programming and erasing of the floating-gate device, thereby significantly increasing the measurement range of radiation dose and enabling precise control of the radiation process.

The invention discloses a wind turbine blade based on streaming control, the outer end of the wind turbine blade is a blade tip, the inner end of the wind turbine blade is a blade root fixed on a blade base, a streaming control unit is arranged on the trailing edge of the wind turbine blade in the spanwise direction, and the streaming control unit is provided with a streaming control unit base embedded in the trailing edge. An insertion hole is formed in the outer side of the streaming control unit base, a piezoelectric material is embedded in the insertion hole, and a vibration sheet is arranged at the outer end of the piezoelectric material. According to the invention, a device which vibrates by a piezoelectric material to drive air to vibrate so as to achieve the purpose of streaming control is designed and arranged on the tail edge of the wind turbine blade along the spanwise direction; according to the device, a vortex structure for generating noise radiation is destroyed at a higher frequency; the energy block radiated by eddy current noise is reduced, and the eddy current noise is quickly dissipated in the radiation process; and thus, the sound feeling of the receiver is reduced.

The utility model discloses an irradiation breeding device for X-ray irradiation of Mongolian medicine seeds, which belongs to the technical field of irradiation breeding equipment and comprises a frame, a controller fixedly connected onto the frame, an X-ray generator extending outwards and fixedly connected to the outer end of the frame, a bearing table correspondingly arranged below the X-ray generator, a seed container placed on the bearing table, and a seed storage tank arranged on the bearing table. The bottom of the bearing table is in transmission connection with a rotating mechanism. The rotating mechanism can drive Mongolian medicine seeds to rotate, so that the seeds can uniformly receive X-ray irradiation in the radiation process, and the controller can adjust the radiation dosage according to requirements. The X-ray is used as an irradiation source, no radioactive substance is used, the environmental safety is higher, and the radiation risk to operators and laboratories is low.

To surely detect an end side of an original without being affected by a noise shadow caused by ruggedness or the like of a surface of the original.SOLUTION: The first lighting device 31 can selectively irradiate the target area with the light of the first primary color and the light of the second primary color from the first irradiating section 310. The second illumination device 32 is configured to irradiate the target area with light of a third primary color from the second irradiating section 320. The control portion 5b causes the first illumination device 31 and the second illumination device 32 to execute a sequential radiation process of sequentially radiating light of the three primary colors to the target area when the optical scanning process is executed. When the optical scanning process and the sequential irradiation process are executed, the image data output portion 4 sequentially outputs line image data of three colors corresponding to the detected light amounts of the light of the three primary colors detected by the line sensor. A linear shadow image along the front end side or the rear end side of the document is detected from the plurality of sets of three color line image data.SELECTED DRAWING: Figure 4

A computer-implemented method, a computer-implemented apparatus, a system and a computer program product for radiation treatment planning are suggested, the method comprising defining a radiation field associated with an initially defined radiation process, automatically splitting the radiation field into a plurality of N sub-fields, with N≥2 and n∈, based on a set of metrics, the set of metrics at least comprising a time limitation associated with a duration of a radiation process for at least one of the N sub-fields, and providing a radiation beam configuration for controlling a radiation apparatus adapted to provide the radiation process associated with the split radiation field.

The present invention relates to a beam line system and method for spectral purification and effect verification thereof, comprising: an upstream radiation source interface for receiving broad spectrum radiation; the bunch transmission channel is used for limiting a radiation propagation path; the switchable spectrum blocking verification assembly can be switched between a first working state in which the switchable spectrum blocking verification assembly is inserted into the radiation propagation path and a second working state in which the switchable spectrum blocking verification assembly is moved out of the radiation propagation path, and is used for regulating and controlling radiation entering a subsequent structure under different spectrum conditions; the spectrum selection and purification assembly is used for carrying out selective transmission and spectrum purification on radiation of a specific target wave band; and the downstream detection unit is used for receiving and detecting the radiation treated by the spectrum selection and purification assembly. The beneficial effects of the invention are that through the combination of the double-reflector spectrum selection system and the narrowband filter membrane assembly, the multi-stage selection of the radiation of the specific target wave band is realized, and the spectral purity of the radiation of the target wave band can be improved.

The invention discloses a radiation transfer and temperature measurement deviation analysis method based on a multilayer structure of a thin film thermocouple. The method comprises the following steps: firstly, establishing a three-dimensional physical model of the thin film thermocouple with the multilayer structure; then finishing theoretical calculation and analysis of the radiation process of the high-temperature fuel gas to the film thermocouple and the radiation process between film layers of the film thermocouple; carrying out grid independence test and simulation calculation of a plurality of working conditions; analyzing the temperature distribution of each film layer of the film thermocouple obtained by simulation calculation; and finally, calculating a temperature measurement deviation value between the node temperature of the thin film thermocouple and the surface temperature of the measured piece under each working condition by using a temperature measurement deviation calculation formula. The radiation transfer process from the high-temperature gas to the film thermocouple and the radiation transfer process among multilayer structures of the film thermocouple can be relatively completely analyzed, simulation calculation verifies that the method is reasonable, a theoretical calculation result has considerable precision and reference value, and the method has wide applicability.

The application discloses a radiation source tracing correction method and device based on oxygen absorption loss and a storage medium, and comprises the following steps: calculating an oxygen absorption loss value Lo2 in a detection distance h from a radiation source; correcting a dipole moment of an equivalent electric dipole of the radiation source by using the obtained oxygen absorption loss value; and predicting environmental radiation based on the dipole moment of the corrected equivalent electric dipole. According to the oxygen absorption loss and the dipole moment of the equivalent electric dipole under the premise that the detection distance is known, the dipole moment of the equivalent electric dipole of the radiation source is corrected, so that the prediction of the environmental radiation based on the corrected dipole moment is more accurate.

The application relates to a color conversion layer preparation method and a display device, and relates to the technical field of laser printing, and is used for relieving the problem that the color conversion layer manufacturing method adopting an inkjet printing method and a photoresist process is relatively complicated and causes relatively high film manufacturing difficulty. The method comprises the following steps: performing at least one laser radiation process on powder laid on a substrate to form a color conversion layer on the substrate; wherein each laser radiation process performs the following steps: laying the powder on the substrate, wherein the powder is a polymer doped with quantum dots or fluorescent powder; radiating the powder laid on the substrate by using a laser according to the positions of preset pixel points to melt the powder at the radiation positions; and removing the powder not radiated by the laser on the substrate. Since the embodiment of the application radiates the powder by using a laser, the polymer is melted to melt the powder at the positions of the preset pixel points, so that the color conversion layer is formed, and the manufacturing steps of manufacturing the color conversion layer are simplified.

The application discloses a monoclinic phase BiVO4 micropipe prepared by a microwave radiation method and a preparation method thereof. Pure Bi(NO3)3.5H2O and NH4VO3 are used as reaction raw materials, distilled water is used as a solvent, polyethylene glycol (PEG-10000) with a molecular weight of 10000 is used as a surfactant, and a monoclinic phase BiVO4 micropipe material is prepared by using a microwave radiation technology. The microwave radiation process is simple in operation, energy-saving and environment-friendly, low in energy consumption, and energy-concentrated, and is favorable for improving a reaction rate and a synthesis efficiency of the BiVO4 material. The XRD and SEM analysis results of the product fully prove that the method can obtain the BiVO4 material with regular morphology and small particle size, is favorable for increasing active sites of the BiVO4 material, and thus improves the photocatalytic performance of the BiVO4 material. The target product BiVO4 material has the abilities of catalytic degradation of pollutants, catalytic photoelectrochemical decomposition of water and energy storage, and is expected to play an important role in the field of photocatalysis.

The application discloses a long afterglow composite material based on excited state regulation of bromine-containing naphthalimide structure carbon dots, which comprises bromine-containing carbon dots and a matrix material; the bromine-containing carbon dots are carbon dots formed by carbonization of bromine-containing naphthalimide compounds and serve as single light-emitting centers; the matrix material is used for constructing a limited environment, regulating excited state kinetic behavior of the bromine-containing carbon dots and realizing long afterglow light emission; the large pi conjugated structure introduced into the carbon dots is beneficial to the formation of a stable excited state, the heavy atom effect of bromine atoms enhances spin-orbit coupling, promotes intersystem crossing and improves the generation efficiency of triplet excitons; different matrices regulate radiation and non-radiation processes of the triplet excitons through rigid confinement or intermolecular interaction, so that the long afterglow light emission performance is effectively regulated. The application can realize the regulatable output of light emission behavior without constructing a multi-light-emitting center or a complex doped system, and can be applied to the fields of information storage, anti-counterfeiting and optoelectronic devices.

The invention relates to the field of semiconductors, particularly provides a semiconductor device and a semiconductor device anti-radiation strengthening method, and aims to solve the problem that an anti-radiation process is complex. To this end, the semiconductor device of the present application comprises: a substrate; the isolation region is positioned in the substrate; the active region is defined by the isolation region; the active device is positioned in the active region and the surface of the active region; the first dielectric layer covers the isolation region, the active region and the active device on the surface of the active region; the first-type contact hole penetrates through the first dielectric layer and exposes an electrode of the active device; the second type of contact holes penetrate through the first dielectric layer and are exposed out of the isolation region; the first filling material is filled in the first type of contact holes and the second type of contact holes and is in contact with the electrodes and the isolation regions respectively, and the first filling material is an anti-radiation material; and the first metal layer is positioned on the first type of contact holes and is electrically connected with the first filling material in the first type of contact holes.

The invention discloses a perovskite thin film heterostructure with a low ASE threshold value, a preparation method of the perovskite thin film heterostructure and a laser, and relates to the technical field of perovskite lasers. The perovskite thin film heterostructure comprises a perovskite thin film and colloidal quantum dots arranged on the perovskite thin film or doped in the perovskite thin film, the perovskite thin film can generate gain laser of a second preset wavelength under excitation of pumping laser of a first preset wavelength, and the light emitting wavelength of the colloidal quantum dots is located between the first preset wavelength and the second preset wavelength. And an energy level gradient is formed between the colloidal quantum dot layer and the perovskite thin film. When the colloidal quantum dots are excited by pumping laser to generate a large number of carriers, the carriers are driven by energy level gradient to be injected into the perovskite thin film, the energy transfer process is faster than the excited radiation process of perovskite, the energy transfer process can serve as a part of the population inversion number of the perovskite thin film, the achievement of particle inversion conditions required by amplified spontaneous emission is promoted, and the performance of the perovskite thin film is improved. Therefore, the threshold value of gain laser generated by the perovskite thin film is reduced.