31 results about "Radiation process" patented technology

The present invention proposes a hot water treatment device, which includes: a first shell, the first shell including an installation cavity and an air inlet; a second shell, the second shell being connected to the first shell, the second shell being located in the installation cavity, and the second shell including a vent; wherein the second shell and the first shell form a silencer cavity, the air inlet is connected to the silencer cavity, and the vent is connected to the silencer cavity and the installation cavity. The hot water treatment device provided by the present application forms a silencer cavity by forming a first shell with an air inlet and a second shell with a vent, and the installation cavity is separated from the silencer cavity, so that during the operation of the hot water treatment device, noise enters the silencer cavity through the vent, so that the radiation path of the generated noise is greatly extended during the radiation process to the outside world, and the noise radiated to the outside world is greatly attenuated, so as to achieve the purpose of reducing noise and improving user comfort.

The present invention discloses a dynamic adaptive thermal radiation modulator based on a metasurface and a manufacturing method thereof. The modulator includes a metal metasurface layer at the top, a thermal expansion layer in the middle, and a substrate at the bottom. The modulator can radiate heat from an object outward through the 8-13μm band, realizing dynamic adaptive regulation of the radiation process. The thermal radiation modulator structure designed by the present invention includes a metal metasurface structure layer, a thermal expansion material layer, and a metal substrate layer. As the ambient temperature changes, the expansion or contraction of the thermal expansion material can control the disconnection and connection of the metal metasurface structure, that is, control the absorption and reflection of the structure in the atmospheric window band, ultimately realizing the switching of the "on" and "off" states of the radiative cooling function to achieve passive adaptive thermal radiation modulation.

A process flow for bonding a die to a substrate incorporates defect risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow can include a radiation process on the component substrate to weaken an adhesive bond of the die from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean the die bonding side, an eject and pick process after performing the first wet clean process to remove the die from the component substrate for bonding to the substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean the substrate bonding side of the substrate, and a hybrid bonding process to bond the die bonding side of the die to the substrate bonding side of the substrate.

The invention provides a PVDF-based elastic ferroelectric material and a preparation method and application thereof, and relates to the technical field of ferroelectric materials. A ferroelectric crystal phase region of the PVDF-based elastic ferroelectric material is protected to the maximum extent, and a uniform three-dimensional elastic network structure formed by firm C-C bonds is constructed in an amorphous region by a PVDF-based ferroelectric polymer and a crosslinking sensitizer through radiation crosslinking; the PVDF-based elastic ferroelectric material has excellent ferroelectricity, great flexibility and elasticity, proper strength and excellent fatigue resistance at the same time. According to the preparation method of the PVDF-based elastic ferroelectric material, the technical bottlenecks of thermal crosslinking and photo-crosslinking are fundamentally overcome through a mild, pure and uniform radiation process, so that controllable preparation of the PVDF-based elastic ferroelectric material with excellent ferroelectricity, great flexibility and elasticity, proper strength and excellent fatigue resistance becomes reality; the preparation method is simple, efficient and high in universality, and is very suitable for large-scale industrial production.

The invention discloses an in-vitro prediction method for cell DNA damage caused by simulated radiation. According to the invention, by introducing the bionic oxidative stress regulation and control module, the simulation precision of the in-vitro model on the in-vivo physiological microenvironment is improved. The dynamic microenvironment intervention system can respond to oxidative stress changes in the radiation process in real time, the redox state of cells is closer to an in-vivo real radiation exposure scene by precisely regulating and controlling the perfusion rate of the active oxygen scavenger, experimental deviation caused by out-of-control oxidative stress level in traditional static culture is avoided, and the experimental accuracy is improved. A more reliable physiological basis is provided for subsequent damage signal detection, a dynamic regulation and control mechanism of the micro-fluidic chip can effectively correct baseline drift caused by oxidative stress fluctuation, and it is ensured that damage site space distribution data captured by the nano biosensor array has a higher signal-to-noise ratio; the influence of external environment interference on experimental data is reduced, and high-quality original data support is provided for follow-up repair trajectory tracking and neural network prediction.

To provide a conductor joint method which can join conductors 11 in a low cost and an accurate manner when there is a difference Δh of height between joint end surfaces of two flat wires 8.SOLUTION: A conductor joint method comprises: an initial radiation process where laser beam is radiated to an inner region of an end face of a first conductor and an inner region of an end face of a second conductor to form a pair of molten pools in parallel with the end faces of both conductors so that outer periphery parts of the respective end faces become dikes; a middle radiation process where laser beam is radiated to a joint side region of the end face of the first conductor and a joint side region of the end face of the second conductor and both regions are adjacent to each other so as to connect the pair of molten pools with each other; and a latter radiation process where laser beam is radiated to the whole body end face consisting of the end face of the first conductor and the end face of the second conductor in an approximately circular shape to form the pair of molten pools connected to each other into a molten ball 34 in a semi-spherical shape.SELECTED DRAWING: Figure 4

The invention discloses a low-scattering conformal tight coupling array antenna based on mode item regulation and control, which is formed by periodically arranging M * N dual-polarized antenna units and conformally arranging the dual-polarized antenna units along an elliptic cylinder curved surface, the two vertical dielectric substrates are parallel to the side edge direction of the elliptic cylinder and are perpendicular to the top dielectric substrate, and the metal floor structure is arranged at the bottom of the vertical dielectric substrates. The upper layer of the top dielectric substrate is covered with a dual-polarized dipole patch; and a feed balun structure is printed on the vertical dielectric substrate. Sparse processing is carried out on the array, so that a part of sparse units are used as dummy elements and do not participate in the radiation process; the port impedance of the sparse unit and the length of the feed microstrip line are optimized, the mode item scattering of the array is regulated and controlled, and the low-scattering conformal tight coupling array antenna is obtained. The working bandwidth of the antenna can cover 8-12 GHz, scattering reduction under in-band dual polarization is achieved, and the antenna can be applied to communication and radar aperture of various high-speed and high-maneuverability stealth aircraft platforms.

The application discloses a kind of graphical substrate and its preparation method, LED epitaxial wafer.Preparation method includes: providing sapphire substrate;Sapphire substrate includes the substrate body and metal ion doping layer being arranged in layers, and the side surface of metal ion doping layer deviating from substrate body is sapphire substrate front;Mask layer is formed on sapphire substrate front;Using exposure developing process, mask layer is patterned to form mask pattern;Based on mask pattern, using dry etching process, sapphire substrate is etched to form multiple protruding structures on sapphire substrate front, and metal ions are doped in protruding structure.This application, metal ion doping layer can absorb light into sapphire substrate inside when exposure, avoid appearing secondary exposure phenomenon, improve mask pattern uniformity;Metal ion doped in protruding structure, can adjust the carrier concentration of epitaxial film layer, reduce the non-radiation process of extra electron in chip, improve the overall performance of chip.

A method for producing a polymeric compound with a positive temperature coefficient (PPTC) and for conformally applying such a compound to a substrate according to an embodiment of the present disclosure may include producing and mixing raw materials to form a PPTC mixture, processing the PPTC mixture by a polymer compounding plant, wherein the PPTC mixture is heated and extruded as a PPTC compound, performing a radiation process on the polymer compound to produce cross-linking between the polymer chains in the PPTC compound, and applying the PPTC compound to a substrate using a hot application process in which the PPTC compound is heated and conformally applied to a surface of the substrate.

A process flow for bonding a die to a substrate incorporates defectivity risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow may include a radiation process on a component substrate to weaken an adhesive bonding of dies from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean die bonding surfaces, eject and pick processes after performing the first wet clean process to remove dies from the component substrate for bonding to a substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean a substrate bonding surface of the substrate, and a hybrid bonding process to bond die bonding surfaces of the dies to the substrate bonding surface of the substrate.

The invention relates to an automatic treatment field segmentation method for controlling a treatment time in a plan. The method comprises defining a radiation field associated with an initially defined radiation process; automatically segmenting the radiation field into a plurality of N sub-fields based on a set of criteria, wherein N > 2 and n e N, said set of criteria comprising at least a time limit associated with a duration of the radiation process for at least one of the N sub-fields; and providing a radiation beam configuration to control a radiation device adapted to provide the radiation process associated with the segmented radiation field.

This invention proposes an air intake assembly and a water heater. The air intake assembly includes: a housing, the housing including a silencing cavity; an air inlet disposed on the housing and connected to the silencing cavity; a vent disposed on the housing and connected to the silencing cavity; and an air guide plate disposed on the housing, located inside the silencing cavity, opposite to the air inlet, and used for airflow guidance. The air intake assembly provided in this application, by distributing an air guide plate opposite to the air inlet within the silencing cavity, cuts off the direct connection between the air inlet and the vent. This allows noise from the gas water heater during operation to enter the silencing cavity through the vent and radiate to the air guide plate. The air guide plate then prevents some noise from escaping through the air inlet, thus extending the radiation path of the generated noise to the outside and significantly attenuating the noise after being blocked, thereby achieving the purpose of noise reduction.

The invention provides a multi-mode identification tag for a library and a book identification method. According to the application, the graphene pattern is superposed on the radio frequency unit, so that on one hand, the first identification information of the book can be independently obtained through a radio frequency interaction mode so as to determine the identification code of the book; on the other hand, corresponding phase components can be superposed in the radiation process of the radio-frequency signal through charge distribution excited by the graphene pattern, so that second identification information of the book can be independently obtained through phase information of the radio-frequency signal; and the identification information is utilized to realize automatic identification of book collection positions, storage requirements or other management information. According to the antenna, independent coding of the management information corresponding to the book can be flexibly realized through a photosensitive material coating mode according to management requirements, important management information can be directly prompted under the condition that a book management system is not searched, and an operator can conveniently and directly carry out corresponding maintenance management on the book. The multi-mode identification tag provided by the invention can be flexibly updated according to management requirements, so that more flexibility and convenience are brought to book management work.

This invention provides a radiation dose measurement method based on a floating-gate semiconductor transistor, primarily addressing the technical problem that existing technologies cannot accurately measure the radiation dose of floating-gate semiconductor transistors. The invention employs a method of measuring the voltage after charging the transistor under test (TUT) and then measuring it after irradiation. Based on a constant current method, it obtains the difference in threshold voltage between the TUT and its pre-irradiation values. Using this method, it obtains the difference in threshold voltage under different radiation doses and finally calculates the curve of the difference in threshold voltage as a function of cumulative radiation dose. This invention involves multiple programming and erasing of the floating-gate device, thereby significantly increasing the measurement range of radiation dose and enabling precise control of the radiation process.

The invention discloses a wind turbine blade based on streaming control, the outer end of the wind turbine blade is a blade tip, the inner end of the wind turbine blade is a blade root fixed on a blade base, a streaming control unit is arranged on the trailing edge of the wind turbine blade in the spanwise direction, and the streaming control unit is provided with a streaming control unit base embedded in the trailing edge. An insertion hole is formed in the outer side of the streaming control unit base, a piezoelectric material is embedded in the insertion hole, and a vibration sheet is arranged at the outer end of the piezoelectric material. According to the invention, a device which vibrates by a piezoelectric material to drive air to vibrate so as to achieve the purpose of streaming control is designed and arranged on the tail edge of the wind turbine blade along the spanwise direction; according to the device, a vortex structure for generating noise radiation is destroyed at a higher frequency; the energy block radiated by eddy current noise is reduced, and the eddy current noise is quickly dissipated in the radiation process; and thus, the sound feeling of the receiver is reduced.

The present invention belongs to the technical field of charged protection in dielectrics, and discloses a method, system, device and terminal for calculating and evaluating the risk of charged in dielectrics. By constructing a specimen model and a shielding layer model, constructing an electron radiation source model and calculating relevant radiation parameters and radiation data, the simulation of the radiation process of the dielectric under a monoenergetic electron radiation environment and the simulation of the radiation process of the dielectric under a real-space electron radiation environment are respectively realized and exported; four voltage application conditions are analyzed, the working voltage range is set to 100 - 1000V, and three levels of voltages 100V, 500V and 1000V are selected for calculation; by constructing a simulation scheme for the grounding method, the influence of the grounding method on the electric field distribution in the dielectric is analyzed; a charge transport model is constructed and solved to realize the risk assessment of electrostatic discharge in the dielectric. The present invention can fully consider the influence of factors such as electron radiation, working voltage, and the grounding method of the dielectric on the charged in the dielectric, and is more in line with the actual working conditions of the spacecraft dielectric.

The utility model discloses an irradiation breeding device for X-ray irradiation of Mongolian medicine seeds, which belongs to the technical field of irradiation breeding equipment and comprises a frame, a controller fixedly connected onto the frame, an X-ray generator extending outwards and fixedly connected to the outer end of the frame, a bearing table correspondingly arranged below the X-ray generator, a seed container placed on the bearing table, and a seed storage tank arranged on the bearing table. The bottom of the bearing table is in transmission connection with a rotating mechanism. The rotating mechanism can drive Mongolian medicine seeds to rotate, so that the seeds can uniformly receive X-ray irradiation in the radiation process, and the controller can adjust the radiation dosage according to requirements. The X-ray is used as an irradiation source, no radioactive substance is used, the environmental safety is higher, and the radiation risk to operators and laboratories is low.

The invention discloses an anti-radiation process fingerprint extraction system, method and device, and relates to the technical field of semiconductor radiation effect mechanism research and application, and the system comprises a central control unit, and a user interaction interface and a COTS device test module which are connected with the central control unit. The central control unit at least comprises an anti-radiation process fingerprint extraction module, an anti-radiation process fingerprint database establishment and storage module and a to-be-tested device test scheme generation module; and the COTS device test module is used for applying test excitation to the to-be-tested device and returning a test characterization result to the central control unit. Microscopic feature characterization, electric heating test analysis, key node positioning and device function testing are carried out on the COTS device to be tested through the system, comprehensive analysis of an anti-radiation process fingerprint extraction algorithm is combined, extraction of anti-radiation process fingerprints of the COTS device is achieved, and the anti-radiation capacity of the COTS device is evaluated at low cost through electric heating test.

Printers and methods for additive manufacturing constructs may include a camera and a spectrometer to obtain spectral information and optical information from a region of molten material to determine a defect condition based on an evaluation of the processed spectral information or optical information. A processor or computer may process the obtained optical information and determine defect conditions during the additive manufacturing process. The obtained spectral information and optical information may be areas of molten material, molten pools, and pasty zones. The printer and method may include a controller configured to modify process parameters to shape a weld puddle to obtain a desired effective absorptivity of a portion of the weld puddle to increase the effective absorptivity, e.g., relative to an absorptivity of a surface of a powder or material deposited by the depositor, to obtain a desired effective absorptivity of a portion of the weld puddle, e.g., relative to an absorptivity of a surface of the powder or material deposited by the depositor. And maintaining an acceptable temperature of the weld pool during the additive manufacturing process.

To surely detect an end side of an original without being affected by a noise shadow caused by ruggedness or the like of a surface of the original.SOLUTION: The first lighting device 31 can selectively irradiate the target area with the light of the first primary color and the light of the second primary color from the first irradiating section 310. The second illumination device 32 is configured to irradiate the target area with light of a third primary color from the second irradiating section 320. The control portion 5b causes the first illumination device 31 and the second illumination device 32 to execute a sequential radiation process of sequentially radiating light of the three primary colors to the target area when the optical scanning process is executed. When the optical scanning process and the sequential irradiation process are executed, the image data output portion 4 sequentially outputs line image data of three colors corresponding to the detected light amounts of the light of the three primary colors detected by the line sensor. A linear shadow image along the front end side or the rear end side of the document is detected from the plurality of sets of three color line image data.SELECTED DRAWING: Figure 4

The present disclosure relates to a method of fabricating a semiconductor structure, the method includes forming an opening and depositing a metal layer in the opening. The depositing includes performing one or more deposition cycles, wherein each deposition cycle includes flowing a first precursor into a deposition chamber and performing an ultraviolet (UV) radiation process on the first precursor. The method further includes performing a first purging process in the deposition chamber to remove at least a portion of the first precursor, flowing a second precursor into the deposition chamber, and purging the deposition chamber to remove at least a portion of the second precursor.

A computer-implemented method, a computer-implemented apparatus, a system and a computer program product for radiation treatment planning are suggested, the method comprising defining a radiation field associated with an initially defined radiation process, automatically splitting the radiation field into a plurality of N sub-fields, with N≥2 and n∈, based on a set of metrics, the set of metrics at least comprising a time limitation associated with a duration of a radiation process for at least one of the N sub-fields, and providing a radiation beam configuration for controlling a radiation apparatus adapted to provide the radiation process associated with the split radiation field.

The present invention relates to a beam line system and method for spectral purification and effect verification thereof, comprising: an upstream radiation source interface for receiving broad spectrum radiation; the bunch transmission channel is used for limiting a radiation propagation path; the switchable spectrum blocking verification assembly can be switched between a first working state in which the switchable spectrum blocking verification assembly is inserted into the radiation propagation path and a second working state in which the switchable spectrum blocking verification assembly is moved out of the radiation propagation path, and is used for regulating and controlling radiation entering a subsequent structure under different spectrum conditions; the spectrum selection and purification assembly is used for carrying out selective transmission and spectrum purification on radiation of a specific target wave band; and the downstream detection unit is used for receiving and detecting the radiation treated by the spectrum selection and purification assembly. The beneficial effects of the invention are that through the combination of the double-reflector spectrum selection system and the narrowband filter membrane assembly, the multi-stage selection of the radiation of the specific target wave band is realized, and the spectral purity of the radiation of the target wave band can be improved.

The invention discloses a radiation transfer and temperature measurement deviation analysis method based on a multilayer structure of a thin film thermocouple. The method comprises the following steps: firstly, establishing a three-dimensional physical model of the thin film thermocouple with the multilayer structure; then finishing theoretical calculation and analysis of the radiation process of the high-temperature fuel gas to the film thermocouple and the radiation process between film layers of the film thermocouple; carrying out grid independence test and simulation calculation of a plurality of working conditions; analyzing the temperature distribution of each film layer of the film thermocouple obtained by simulation calculation; and finally, calculating a temperature measurement deviation value between the node temperature of the thin film thermocouple and the surface temperature of the measured piece under each working condition by using a temperature measurement deviation calculation formula. The radiation transfer process from the high-temperature gas to the film thermocouple and the radiation transfer process among multilayer structures of the film thermocouple can be relatively completely analyzed, simulation calculation verifies that the method is reasonable, a theoretical calculation result has considerable precision and reference value, and the method has wide applicability.

The application discloses a radiation source tracing correction method and device based on oxygen absorption loss and a storage medium, and comprises the following steps: calculating an oxygen absorption loss value Lo2 in a detection distance h from a radiation source; correcting a dipole moment of an equivalent electric dipole of the radiation source by using the obtained oxygen absorption loss value; and predicting environmental radiation based on the dipole moment of the corrected equivalent electric dipole. According to the oxygen absorption loss and the dipole moment of the equivalent electric dipole under the premise that the detection distance is known, the dipole moment of the equivalent electric dipole of the radiation source is corrected, so that the prediction of the environmental radiation based on the corrected dipole moment is more accurate.

A process flow for bonding die to a substrate combines defect risk management and yield enhancement by reducing the flow complexity. In some embodiments, a process flow may include performing a radiation process on a component substrate to weaken an adhesive bond of a die to a surface of the component substrate, performing a first wet cleaning process on the component substrate after the radiation process to clean the die bond surface, performing an ejection and pickup process after performing the first wet cleaning process, and performing a second wet cleaning process after performing the second wet cleaning process to clean the die bond surface. The method includes performing a first wet cleaning process on a component substrate to remove die from the component substrate for bonding to the substrate, performing a plasma activation process on the substrate, performing a second wet cleaning process on the substrate after the plasma activation process for cleaning a substrate bonding surface of the substrate, and performing a hybrid bonding process, a die bonding surface of the die is bonded to a substrate bonding surface of the substrate.

The application relates to a color conversion layer preparation method and a display device, and relates to the technical field of laser printing, and is used for relieving the problem that the color conversion layer manufacturing method adopting an inkjet printing method and a photoresist process is relatively complicated and causes relatively high film manufacturing difficulty. The method comprises the following steps: performing at least one laser radiation process on powder laid on a substrate to form a color conversion layer on the substrate; wherein each laser radiation process performs the following steps: laying the powder on the substrate, wherein the powder is a polymer doped with quantum dots or fluorescent powder; radiating the powder laid on the substrate by using a laser according to the positions of preset pixel points to melt the powder at the radiation positions; and removing the powder not radiated by the laser on the substrate. Since the embodiment of the application radiates the powder by using a laser, the polymer is melted to melt the powder at the positions of the preset pixel points, so that the color conversion layer is formed, and the manufacturing steps of manufacturing the color conversion layer are simplified.

The application discloses a monoclinic phase BiVO4 micropipe prepared by a microwave radiation method and a preparation method thereof. Pure Bi(NO3)3.5H2O and NH4VO3 are used as reaction raw materials, distilled water is used as a solvent, polyethylene glycol (PEG-10000) with a molecular weight of 10000 is used as a surfactant, and a monoclinic phase BiVO4 micropipe material is prepared by using a microwave radiation technology. The microwave radiation process is simple in operation, energy-saving and environment-friendly, low in energy consumption, and energy-concentrated, and is favorable for improving a reaction rate and a synthesis efficiency of the BiVO4 material. The XRD and SEM analysis results of the product fully prove that the method can obtain the BiVO4 material with regular morphology and small particle size, is favorable for increasing active sites of the BiVO4 material, and thus improves the photocatalytic performance of the BiVO4 material. The target product BiVO4 material has the abilities of catalytic degradation of pollutants, catalytic photoelectrochemical decomposition of water and energy storage, and is expected to play an important role in the field of photocatalysis.

The application discloses a long afterglow composite material based on excited state regulation of bromine-containing naphthalimide structure carbon dots, which comprises bromine-containing carbon dots and a matrix material; the bromine-containing carbon dots are carbon dots formed by carbonization of bromine-containing naphthalimide compounds and serve as single light-emitting centers; the matrix material is used for constructing a limited environment, regulating excited state kinetic behavior of the bromine-containing carbon dots and realizing long afterglow light emission; the large pi conjugated structure introduced into the carbon dots is beneficial to the formation of a stable excited state, the heavy atom effect of bromine atoms enhances spin-orbit coupling, promotes intersystem crossing and improves the generation efficiency of triplet excitons; different matrices regulate radiation and non-radiation processes of the triplet excitons through rigid confinement or intermolecular interaction, so that the long afterglow light emission performance is effectively regulated. The application can realize the regulatable output of light emission behavior without constructing a multi-light-emitting center or a complex doped system, and can be applied to the fields of information storage, anti-counterfeiting and optoelectronic devices.

The invention relates to the field of semiconductors, particularly provides a semiconductor device and a semiconductor device anti-radiation strengthening method, and aims to solve the problem that an anti-radiation process is complex. To this end, the semiconductor device of the present application comprises: a substrate; the isolation region is positioned in the substrate; the active region is defined by the isolation region; the active device is positioned in the active region and the surface of the active region; the first dielectric layer covers the isolation region, the active region and the active device on the surface of the active region; the first-type contact hole penetrates through the first dielectric layer and exposes an electrode of the active device; the second type of contact holes penetrate through the first dielectric layer and are exposed out of the isolation region; the first filling material is filled in the first type of contact holes and the second type of contact holes and is in contact with the electrodes and the isolation regions respectively, and the first filling material is an anti-radiation material; and the first metal layer is positioned on the first type of contact holes and is electrically connected with the first filling material in the first type of contact holes.