Wafer edge protection ring and method for reducing particles at wafer edge

Abstract

The invention relates to a wafer edge protection ring and a method for reducing particles at a wafer edge. The protection ring is located in a reaction cavity of a plasma processing device, the protection ring can cover the wafer edge in the process that a wafer is processed so that processing byproducts including polymers can be borne, and the protection ring can move in the process that the wafer is released and take the collected polymers off the wafer. The wafer edge protection ring is simple in structure, convenient to control and capable of effectively reducing the particles at the wafer edge and guarantees quality of a chip on the wafer edge.

Description

technical field

[0001] The invention relates to a plasma processing device in the field of semiconductor manufacturing, in particular to a wafer edge protection ring and a method for reducing wafer edge particles. Background technique

[0002] Currently, for example, in some plasma processing devices used for etching or TSV (Through Silicon Via) processes, a processing table is usually provided at the bottom of the reaction chamber for carrying a wafer placed thereon. During the process, the reaction gas is introduced into the reaction chamber through the upper electrode and maintained at the set pressure value under the action of the pressure controller. A radio frequency power supply (for example, 13.56MHz, 3000W) is connected to the processing table or the upper electrode through a matching network, and is used to form a radio frequency field between the processing table and the upper electrode to excite the reactive gas into a plasma state, so as to facilitate the use of...

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