Silicon-based near-infrared single photon avalanche diode detector and manufacturing method thereof

Abstract

The invention discloses a silicon-based near-infrared single photon avalanche diode detector, and belongs to the technical field of photoelectric detection. The single photon avalanche diode detectorcomprises a P-type epitaxial layer arranged above a P-type substrate, wherein the P-type substrate and the P-type epitaxial layer are provided with an N+ buried layer region therebetween, deep P wellregions are symmetrically arranged on the N+ buried layer region, a deep P well region is arranged on the N+ buried layer region at the central position, and an avalanche region is formed between thedeep P well region and the N+ buried layer region. According to the single photon avalanche diode detector, the deep avalanche region is formed between the deep P well and the N+ buried layer, the lightly-doped and uniformly distributed P-type epitaxial layer is utilized as a virtual protection ring at the same time to improve the near-infrared photon detection efficiency, the size of the device is reduced, and the dark counting noise is reduced. The manufacturing method can carry out manufacturing based on the standard silicon-based process, and has the advantages of low cost, high integration, low power consumption, near-infrared detection capability and the like.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a silicon-based near-infrared single-photon avalanche diode detector and a manufacturing method thereof. Background technique [0002] Single photon avalanche photodiodes (ie: single photon avalanche diodes, SPAD) have the characteristics of fast response, large avalanche gain, high detection efficiency, small size, light weight, and low power consumption, and have become the best device for making single photon detectors. . [0003] The SPAD detector can detect very weak photons (up to the order of single photons), and sample and calculate the light field of the imaging target in time and space, and finally obtain the required high-quality imaging results, so it is used in quantum communication , astronomical detection, biological waveguide, radiation detection, high-energy physics, astronomical photometry, optical time-domain reflectometry and quant...

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Problems solved by technology

[0006] Purpose of the invention: The purpose of the present invention is to provide a silicon-based near-infrared single-photon avalanche diode detector. Aiming at the low detection efficiency of the traditional silicon-based integrated single-photon avalanche diode detector for near-infrared photons, the N+ buried The deep PN junction formed between the layer and the deep P well is used as the avalanche region of the device, and the low-doped and uniformly distributed P-type epitaxial layer is used as a virtual guard ring to improve the detection efficiency of near-infrared photons, reduce the size of the device and reduce the dark count noise

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