A Single Photon Avalanche Diode Detector Array Unit with High Detection Efficiency

A single-photon avalanche and detector array technology, which is applied to electrical components, semiconductor devices, circuits, etc., can solve the problems of low detection efficiency and low photon detection efficiency, and achieve improved detection efficiency, improved photon detection efficiency, and low position Effect

Active Publication Date: 2018-06-29
NANJING UNIV OF POSTS & TELECOMM INST AT NANJING CO LTD
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Problems solved by technology

[0005] The object of the present invention is to solve the problem of low detection efficiency of traditional SPAD detectors, and proposes a single photon avalanche diode detector array unit with high detection efficiency. Layer-protected deep P-well SPAD structure, this array unit solves the problem of low photon detection efficiency and improves the performance of SPAD

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  • A Single Photon Avalanche Diode Detector Array Unit with High Detection Efficiency
  • A Single Photon Avalanche Diode Detector Array Unit with High Detection Efficiency
  • A Single Photon Avalanche Diode Detector Array Unit with High Detection Efficiency

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Embodiment Construction

[0027] The invention will be further described in detail below in conjunction with the accompanying drawings of the specification.

[0028] Such as figure 1 Shown is a schematic cross-sectional view of a traditional SPAD array unit; the active area of ​​the array unit includes a P-type substrate 1; a deep N well 2; a P+ region 3; a P well 4 inside the deep N well; a P well and a P+ region The shallow trench isolation (STI) region 5 between the two P+ regions; the N+ region 6; the shallow trench isolation (STI) region 7 between the two P+ regions; the P+ region 8; the P wells 9 on both sides of the P-type substrate. There is a deep N well 2 in the P-type substrate 1 of the traditional SPAD structure. The center of the surface of the deep N well 2 is the P+ region 3. The electrode on the surface of this region serves as the anode of the SPAD device, and the P+ region 3 and the deep N well 2 are formed In the avalanche region, the lightly doped P well 4 surrounded by the P+ region 3...

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Abstract

The invention discloses a single-photon avalanche diode detector array unit with high detection efficiency. The array unit is a SPAD structure with surrounding P-injection, P-buried layer and deep P-well protected by P-buried layer. A deep P well is formed by ion implantation in the deep P well. There are two buried layer regions in the deep P well, namely the P buried layer region 3 and the P-buried layer region 4. There is a P-implanted region above the P-buried layer region 4. 8 surround. The array unit structure can effectively improve the photon detection efficiency of the SPAD device, and the dark count rate is very low, which greatly improves the overall performance of the SPAD detector.

Description

Technical field [0001] The invention relates to a single-photon avalanche photodiode detector array unit with high detection efficiency, belonging to the field of photoelectric technology. Background technique [0002] The single-photon avalanche photodiode (ie: SPAD) has the characteristics of fast response, large avalanche gain, high detection efficiency, small size, light weight, and low power consumption, so it has become the best device for making single-photon detectors. The SPAD detector can detect very weak light sources, up to the order of single photons, and sample and calculate the light field of the imaging target in time and space, and finally obtain the required high-quality imaging results. Therefore, it has been widely used in quantum communication, astronomical detection, biological waveguide, radiation detection, high-energy physics, astronomical photometry, optical time domain reflection and quantum key distribution system, etc., and has gradually become a rese...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/144H01L31/107H01L31/0352
Inventor 徐跃向平
Owner NANJING UNIV OF POSTS & TELECOMM INST AT NANJING CO LTD
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