Single-photon Si-APD detector and manufacturing method thereof

Abstract

The invention provides a single-photon Si-APD detector, which comprises an absorption region, a P+ contact region, an N+ contact region, an avalanche region and a dielectric layer. The absorption region is arranged in the middle of the surface of a P-type substrate; the P+ contact region is arranged under the absorption region; and a lower electrode is arranged under the P+ contact region. Cut-offrings are arranged at the two ends of the upper portion of the absorption region. The avalanche region is arranged in the middle of the upper portion of the absorption region and is formed through compensation doping of P-type impurities and N-type impurities. The N+ contact region is arranged on the avalanche region. The two sides of the avalanche region are each provided with a protection ring,and an upper electrode is arranged above the protection ring. The dielectric layer is arranged on the N+ contact region. The single-photon Si-APD detector has the relatively wide avalanche region andintroduces few defects in the manufacturing process, and can realize device performance of high detection efficiency and low dark counting.

Description

technical field [0001] The invention relates to the field of photodetector chips, in particular to a single-photon Si-APD detector and a manufacturing method thereof. Background technique [0002] Single-photon detection, as a detection technology for extremely weak optical signals, has broad application prospects in the fields of quantum communication, astronomical photometry, medical imaging, and radar detection. In view of its huge scientific research value and strategic position, single-photon detection has become the current One of the hot spots in the field of photoelectric detection. As the core component of the detection system, the single-photon detector determines the performance parameters of the entire single-photon detection system. Therefore, designing a single-photon detector with high detection efficiency and low dark count is one of the key problems that need to be solved urgently. [0003] The single-photon silicon avalanche diode Si-APD is a special photo...

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Problems solved by technology

The width of the avalanche region prepared by the diffusion method is very narrow, and to achieve a high avalanche probability when the device is working requires a higher electric field strength in the avalanche region, such as Figure 5 As shown, while higher electric field strength will lead to band-to-band tunneling and defect-assisted tunneling, making the dark count larger

The width of the avalanche region prepared by the high-energy implantation method is wider, and the electric field intensity in the avalanche region is lower, such as Image 6 However, the bombardment of high-energy impurity ions in high-energy implantation will damage the silicon lattice and cause defects, which will also increase the dark count

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