A np-type single-photon avalanche diode based on cmos image sensor technology

A single-photon avalanche and image sensor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as limitations and poor noise characteristics, and achieve the effects of enhancing response, improving noise characteristics, and reducing dark counts

Inactive Publication Date: 2017-09-12
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional CMOS single photon avalanche diodes are implemented using P+ / Nwell junctions, and the application of NP type single photon avalanche diodes is limited due to poor noise characteristics

Method used

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  • A np-type single-photon avalanche diode based on cmos image sensor technology
  • A np-type single-photon avalanche diode based on cmos image sensor technology
  • A np-type single-photon avalanche diode based on cmos image sensor technology

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Embodiment Construction

[0019] figure 1 It is an NP-type single-photon avalanche diode (SPAD) based on CMOS image sensor technology provided by the present invention, and its basic structure includes: a deep N well (200) is arranged above a P-type silicon substrate (100); a P well (301 ) is formed above and in contact with the deep N well (200); lightly doped guard rings (401, 402) are provided around the P well (301); N+ regions (601, 602) are formed in Above the P well (301) and overlaps with the lightly doped guard rings (401, 402) to a certain extent; N+ regions (601, 602) and lightly doped guard rings (401, 402) are provided with heavy doping Doped P-type regions (801, 802, 803), covering the entire surface of (601, 602) and (401, 402) except for the cathode and anode contacts; lightly doped guard rings around (401, 402) There are P wells (302, 303), and the P well region (302, 303) leads to the substrate electrode through the P+ region (502, 503); the heavily doped P type region (801, 802, 803...

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Abstract

The invention discloses an NP-type single-photon avalanche diode (SPAD) based on a CMOS image sensor technology. Its basic structure includes: a deep N well is arranged above a P-type silicon substrate; a P well is formed above the deep N well; There is a lightly doped guard ring; the N+ region is formed above the P well and has a certain overlap with the guard ring; a PN junction is formed between the N+ and the P well, and the cathode electrode and the anode electrode are drawn out through N+ and P+; the N+ region and A heavily doped P-type region is set above the guard ring; a P well is set around the guard ring and the substrate electrode is drawn out through P+. The single photon avalanche diode of the present invention can reduce the dark count caused by the interface defect of the NP-type SPAD device by making a heavily doped P-type region on the surface of the N+ region; through effective layout technology, it can reduce the dark count caused by the defect in the STI Dark counting; through effective guard ring technology, edge breakdown of SPAD devices can be prevented; by adding a suitable bias voltage between electrodes, its response in the blue light band can be enhanced.

Description

technical field [0001] The invention relates to a structure of an NP-type single-photon avalanche diode based on a CMOS image sensor technology. Background technique [0002] Single-photon detection is a detection method of extremely weak light, which is widely used in astronomy, biochemistry and medical diagnosis and other fields. Because the energy of a single photon is extremely low, it is difficult to directly extract this weak signal with common detection methods. In order to observe the changes caused by the absorption of a single photon in matter, an associated amplification mechanism must exist. Using the principle of the photoelectric effect, single-photon detectors based on photomultiplier tubes (PMTs) and avalanche photodiodes can be employed. [0003] Early single-photon detection used the method of photomultiplier tubes. As a single photon detector, PMT has the advantages of high gain, large photosensitive area and low dark count, but it needs to work at high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107H01L31/0352
Inventor 金湘亮杨红姣
Owner XIANGTAN UNIV
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