An integrated low-latency actively quenched near-infrared single-photon detector

Abstract

The invention discloses an integrated low-delay active quenching near-infrared single-photon detector, which comprises an active quenching circuit and an active recovery circuit, the active quenchingcircuit comprises an APD chip, a reverse amplifier, a high-speed comparator and an identification level adjusting circuit, the anode of the APD chip is connected to the forward input end of the high-speed comparator through a balance capacitor Cc, and meanwhile the anode of the APD chip is connected to the direct-current bias control circuit; the cathode of the APD chip is divided into two paths,one path is connected to the reverse input end of the high-speed comparator and the identification level adjustment circuit through the balance resistor R and the balance capacitor Cd1, and the otherpath is connected with the quenching transistor bias circuit; the forward output end of the high-speed comparator is connected with the reverse amplifier to generate a quenching signal and send the quenching signal to the cathode of the APD chip; the active recovery circuit controls a pulse trigger for the FPGA, and the pulse trigger is connected with the forward enabling end of the high-speed comparator. The detector has the advantages that the USB power supply circuit can be directly powered by a USB, and has low post-pulse probability and strong practicability in the case of low dead time and high detection efficiency.

Description

technical field [0001] The invention belongs to the field of high-speed quantum detection and photoelectric detection, and in particular relates to an integrated low-delay active quenching near-infrared single photon detector. Background technique [0002] The single photon detector is the core of the single photon detection system. At present, the photoelectric conversion devices used in single photon detectors mainly include photomultiplier tube (PMT) and avalanche diode (APD). Others include vacuum avalanche diode (VAPD), ultra- Transduced edge sensor (TES), enhanced photodiode (IPD) and superconducting single photon detector (SSPD), etc. Among them, the photomultiplier tube is suitable for ultraviolet and visible light, but the working voltage is high, the quantum efficiency is low, and the volume is large; the vacuum avalanche photodiode and the enhanced photodiode are new photodetectors made by combining semiconductor devices and vacuum electronic devices. The materia...

AI Technical Summary

Problems solved by technology

Due to the inability to detect photons within the dead time, it may lead to pile-up effects or first photon bias effects, resulting in distortion of time-correlated single photon counting results

Due to the distributed capacitance and junction capacitance of the avalanche photodiode itself, the existence of these capacitances will generate differential interference pulses on the rising and falling edges of the gating signal, and it is a big challenge to extract the avalanche signal from the differential interference pulses

In addition, the intrinsic recovery time of the avalanche diode after the avalanche of the APD is too long, which becomes a bottleneck affecting the speed of the detector and improving the transmission rate of quantum cryptography communication

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