Method of building crystal to grow lead zirconate titanate film

A lead zirconate titanate and thin film technology, which is applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of machine PZT thin film pollution and ferroelectric capacitor damage, etc.

Inactive Publication Date: 2003-04-30
MACRONIX INT CO LTD
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, since it is known that all methods require tempering at temperatures above 500°C, it is necessary to fabricate PZT thin films first, and then proceed with the subsequent Metal Interconnection fabrication process.
This will cause some problems. One is that the machine for making the dielectric layer and the metal layer is easily polluted by the PZT film; damaged

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of building crystal to grow lead zirconate titanate film
  • Method of building crystal to grow lead zirconate titanate film
  • Method of building crystal to grow lead zirconate titanate film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In this embodiment, the manufacturing process of the capacitor and the lead zirconate titanate film therein is taken as an example, wherein the lower electrode and the lead zirconate titanate film are formed by the method proposed in the present invention.

[0027] Please refer to figure 1 First, a dielectric layer 100 is provided, under which are CMOS components and other metal layers, and the uppermost metal interconnection structure 110 and a dielectric layer 120 have been formed on it, wherein the material of the dielectric layer 120 is preferably plasma Silicon oxide formed by volume-enhanced chemical vapor deposition (PECVD). Here, the reason why the metal interconnect structure 110 can be fabricated first is because the formation temperature of the lead zirconate titanate film of the present invention is relatively low as mentioned above.

[0028] Please continue to refer to figure 1 , and then deposit a barrier layer 130 on the dielectric layer 120, the materi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A process for growing the lead zirconate titanate film includes such steps as building crystal growing a lanthanum nickel oxide film on substrate in critical field mode, and building crystal growing the lead zirconate titanate film at 350-500 deg.C in critical field mode.

Description

technical field [0001] The present invention relates to a method for manufacturing a high dielectric constant film, and in particular relates to an epitaxial growth lead zirconate titanate (Lead Zirconate Titanate, PbZr x Ti 1-x o 3 , PZT) film method. Background technique [0002] Lead zirconate titanate is a multifunctional material, which can be used as high dielectric constant material (High-K Material), ferroelectric material (Ferroelectric Material), piezoelectric material (Piezoelectric Material), or pyroelectric material (Pyroelectric Material), the following will be introduced sequentially. [0003] Firstly, because the lead zirconate titanate film has a high dielectric constant (Dielectric Constant), it can be applied to the production process of advanced dynamic random access memory (DRAM). This is because the integration of dynamic random access memory (DRAM) continues to increase, and the size of memory cells (Memory Cell) continues to shrink, so the area of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/08C30B29/32H01L21/203H01L21/363
Inventor 龙翔澜
Owner MACRONIX INT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap