Undoped room-temperature ferromagnetic spinning zero-gap semiconductor film and preparation method thereof

A room temperature ferromagnetic and semiconductor technology, applied in solid-state chemical plating, metal material coating process, coating and other directions, can solve the problem of not finding the related characteristics of spin zero band gap

Active Publication Date: 2012-10-24
安徽瑞德磁电科技有限公司
View PDF1 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, experimental studies on ferromagnetic spin zero-gap semiconductors are all directed towards PbPdO 2 Doped with transition metal ions, without doping PbPdO 2 Although the material has been experimentally confirmed as the first zero-bandgap oxide, it has only obtained ferromagnetism at low temperatures below 20K, and no spin-zero-bandgap-related properties have been found.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Undoped room-temperature ferromagnetic spinning zero-gap semiconductor film and preparation method thereof
  • Undoped room-temperature ferromagnetic spinning zero-gap semiconductor film and preparation method thereof
  • Undoped room-temperature ferromagnetic spinning zero-gap semiconductor film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Measure 50ml ethylene glycol as organic solvent, according to the final product PbPdO 2 To a concentration of 0.3mol / L, weigh lead nitrate (AR) and palladium nitrate (AR) respectively, and dissolve them completely in ethylene glycol respectively, then mix the two solutions and dilute them with ethylene glycol, wherein, The atomic ratio of lead and palladium is set to 1.02:1, and the excess of Pb by 2at.% is to make up for the loss of lead in the subsequent heat treatment process;

[0026] Weigh citric acid according to the molar number of 2.2×0.3mol / L×50ml×(1.02+1), add it to the above mixed solution, place it in an environment of 64°C, and stir for 6 hours to obtain a completely complexed sol;

[0027] Coating the sol on the sapphire single crystal substrate to form a film by using the spin-coating process. The process parameters of the first step are: 700rpm×12 seconds; the parameters of the second step are: 3000rpm×30 seconds;

[0028] Place the film in an oven and ...

Embodiment 2

[0039] Get 50ml ethylene glycol as organic solvent, according to final product PbPdO 2 The concentration is 0.08mol / L, weigh lead chloride (AR) and palladium chloride (AR) respectively, and dissolve them completely in ethylene glycol respectively, then mix the two solutions and dilute them with ethylene glycol, Among them, the atomic ratio of lead and palladium is set to 1.05:1, and the excess of Pb by 5at.% is to compensate for the loss of lead in the subsequent heat treatment process;

[0040] Weigh citric acid according to the molar number of 2.2×0.08mol / L×50ml×(1.05+1), add it to the above mixed solution, place it in an environment of 68°C, and stir for 6 hours to obtain a completely complexed sol;

[0041] Using the spin-coating process, the sol is coated on the sapphire single crystal substrate to form a film. The process parameters of the first step are: 800rpm×10 seconds; the process parameters of the second step are: 3500rpm×40 seconds;

[0042] Place the film in an ...

Embodiment 3

[0051] Measure 50ml ethylene glycol as organic solvent, according to the final product PbPdO 2 The concentration is 0.2mol / L, weigh lead nitrate (AR) and palladium chloride (AR) respectively, and dissolve them completely in ethylene glycol respectively, then mix the two solutions and dilute them with ethylene glycol, where , the atomic ratio of lead and palladium is set to 1.1:1, and the excess of Pb by 10at.% is to make up for the loss of lead in the subsequent heat treatment process;

[0052] Weigh citric acid according to the molar number of 2.2×0.2mol / L×50ml×(1.1+1), add it to the above mixed solution, place it in an environment of 70°C, and stir for 6 hours to obtain a completely complexed sol;

[0053] Coating the sol on the sapphire single crystal substrate to form a film by using the spin-coating process. The process parameters of the first step are: 600rpm×15 seconds; the parameters of the second step are: 4000rpm×20 seconds;

[0054] Place the film in an oven and dr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses an undoped room-temperature ferromagnetic spinning zero-gap semiconductor film and a preparation method thereof. The undoped room-temperature ferromagnetic spinning zero-gap semiconductor film is characterized in that the semiconductor film is in a granular film microstructure composed of body-centered orthorhombic PbPdO2 nano-grains with the size of 17-35nm. The undoped room-temperature ferromagnetic spinning zero-gap semiconductor film has room-temperature ferromagnetism, magnetization density of the undoped room-temperature ferromagnetic spinning zero-gap semiconductor film decreases suddenly when magnetic field increases to a certain critical field, and saturation magnetization strength thereof increases with rise of temperature. Curie temperature of spinning zero-gap semiconductor can be increased greatly, and the spinning zero-gap semiconductor is ferromagnetic even being at 300K.

Description

technical field [0001] The invention relates to a spin zero-bandgap semiconductor film and a preparation method thereof, in particular to an undoped spin zero-bandgap semiconductor film with room temperature ferromagnetism and a preparation method thereof. Background technique [0002] As a new type of spintronic material following semimetals and dilute magnetic semiconductors, spin zero bandgap semiconductors theoretically have both high spin polarizability and large spin diffusion length, and have gradually attracted people's attention in recent years. The concept of spin-zero bandgap semiconductors was proposed by Professor Wang Xiaolin of the University of Wollongong in Australia in 2008. This material is based on a zero-gap semiconductor, but it has a special energy band structure different from the zero-gap semiconductor: there is a gap in a certain spin direction (or both spin directions), but the same or different spin directions The top of the valence band and the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C20/08
Inventor 苏海林汤凤林吴玉程黄荣俊
Owner 安徽瑞德磁电科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap