The application discloses a dynamic bias anti-latch circuit which can be used for
signal reading of a superconducting X-
ray detector, comprising three kinds of anti-latch circuits, namely, a
direct current bias circuit, an output stage circuit and a superconducting
niobium nitride nanowire detector device. The superconducting
niobium nitride nanowire with a depth-
width ratio exceeding 1:1 is prepared through a micro-nano
processing technology, and after being packaged, the superconducting
chip is assembled into the three kinds of anti-latch circuits. Circuit 1 is a gate bias circuit, a
signal generator provides a gate trapezoidal bias
voltage for the
detector, circuit 2 is a front-end small resistance active
quenching circuit, a 10Ω small resistance is connected in series at the front end of the Bias-Tee to control the circuit current, and circuit 3 is a detector parallel small resistance active
quenching circuit, a 50Ω small resistance is connected in parallel at both ends of the
nanowire device to
discharge the superconducting current of the device. The application can solve the
device latch problem caused by the excessively high
photon energy in X-
ray detection, realize high time precision measurement of X-rays, and can be applied to the field of X-
ray detection research.