Cadmium-free copper indium gallium selenide thin film solar cell and preparation method of zinc sulfide buffer layer film thereof

A technology of solar cells and indium gallium selenide, which is applied in circuits, electrical components, and final product manufacturing, etc., can solve the problems of thin film non-ZnS pure phase, difficult to control thin film uniformity, and poor reproducibility of stirring rate.

Inactive Publication Date: 2011-12-07
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0007] In the preparation of CIGS solar cell, the method of obtaining ZnS thin film is very important, at present as the preparation of the ZnS buffer layer of solar cell mostly adopts CBD method, this method has the following problems: 1) there is homogeneous precipitation during thin film deposition, in formation At the same time as ZnS, Zn(OH) is also generated 2 , Zn(OH) 2 Mixed into Zn

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  • Cadmium-free copper indium gallium selenide thin film solar cell and preparation method of zinc sulfide buffer layer film thereof
  • Cadmium-free copper indium gallium selenide thin film solar cell and preparation method of zinc sulfide buffer layer film thereof

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[0029] A method for preparing a cadmium-free copper indium gallium selenide thin film solar cell comprising the following steps:

[0030] Step 1: sequentially forming a back electrode and a CIGS light absorption layer on a substrate to form a sample.

[0031] Specifically, after the glass substrate is cleaned and placed in a vacuum chamber for glow treatment, Mo is sputtered and deposited to form a back electrode, and then transferred to another chamber for magnetron sputtering or vacuum heating to evaporate copper indium gallium metal, copper indium gallium Step-by-step deposition on the glass Mo substrate to prepare the copper indium gallium metal prefabricated layer of the CIGS thin film battery, and then transferred to the vacuum heat treatment chamber of the solid source light selenization device for solid source light selenization treatment, the copper indium gallium metal prefabricated layer layer transforms into the optically absorbing layer of the CIGS thin film cell....

Embodiment 1

[0064] 4.39 g of Zn(CH 3 COO) 2 2H 2 O was added to 50ml of absolute ethanol, stirred until milky, and then 1.22ml of ethanolamine was added dropwise to the solution. After the solution was completely clarified, it was allowed to stand at 65°C for 10 minutes to obtain a transparent and stable zinc hydroxide sol. Dip the sample with the back electrode and CIGS light absorbing layer formed in the above-mentioned sol for 10 seconds, and slowly and evenly lift the sample out. Put the sample piece after coating film into a constant temperature oven at 120° C. to dry for 30 minutes to obtain a sample piece with ZnO thin film attached. Then in the selenization chamber H 2 Annealing in S atmosphere, the annealing temperature is 400° C., and the time is 60 minutes; a ZnS buffer layer film is obtained.

[0065] Finally, the sample with the buffer layer is transferred to the vacuum magnetron sputtering chamber to deposit the intrinsic i-ZnO high-resistance barrier layer and the low-r...

Embodiment 2

[0067] 2.195g Zn(CH 3 COO) 2 2H 2 O was added to 50ml of absolute ethanol, stirred until it became milky, and then 0.61ml of ethanolamine was added dropwise to the solution. After the solution was completely clarified, it was allowed to stand at 65°C for 10 minutes to obtain a transparent and stable zinc hydroxide sol. Dip the sample with the back electrode and CIGS light absorbing layer formed in the above-mentioned sol for 10 seconds, and slowly and evenly lift the sample out. Put the coated sample in a constant temperature oven at 100°C to dry for 30 minutes, then immerse the sample in the sol, repeat the above process several times, and obtain a sample with a suitable thickness attached to the ZnO film. Then in the selenization chamber H 2 Annealing in S atmosphere, the annealing temperature is 500° C., and the time is 10 minutes; a ZnS buffer layer film is obtained. Finally, the sample with the buffer layer is transferred to the vacuum magnetron sputtering chamber to ...

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Abstract

A method for preparing a cadmium-free copper indium gallium selenide thin film solar cell, comprising the following steps: step 1, forming a back electrode and a copper indium gallium selenide light absorption layer on a substrate in sequence to form a sample; step 2, adding zinc acetate dihydrate Dissolve in absolute ethanol, add a stabilizer, and heat to form a sol; step 3, immerse the sample in the sol for 5 to 10 seconds, and then lift the sample from the sol; step 4, put the sample Dry at 100-200° C. for 30 minutes to form a zinc oxide film on the surface of the sample; Step 5, put the sample into a selenization chamber and perform annealing treatment under an atmosphere of hydrogen sulfide to convert the zinc oxide film into a zinc sulfide buffer layer film; And step six, sequentially forming a barrier layer and a window layer on the zinc sulfide buffer layer film. Due to the high temperature in the annealing process of the above preparation method, the crystalline quality of the thin film can be improved. The invention also provides a preparation method of the zinc sulfide buffer layer film.

Description

【Technical field】 [0001] The invention relates to a cadmium-free copper indium gallium selenium thin film solar cell and a preparation method of the zinc sulfide buffer layer. 【Background technique】 [0002] Copper Indium Gallium Selenide (Cu(In,Ga)Se 2 , referred to as CIGS) thin-film solar cell is a new type of solar cell developed in the late 1980s, and its excellent performance has attracted widespread attention. The typical structure of copper indium gallium selenide thin film solar cells is a multilayer film structure, including: metal gate (Al) / transparent electrode (AZO) / window layer (ZnO) / buffer layer (CdS) / light absorption layer (CIGS) / Back electrode (Mo) / glass. [0003] Although the thickness of the buffer layer is only 50nm, it is crucial for CIGS cells. The buffer layer can form a heterojunction with the CIGS absorber layer so as to separate the photogenerated carriers and protect the absorber layer from being damaged when the upper electrode is pla...

Claims

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Application Information

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IPC IPC(8): H01L31/18C03C17/36
CPCY02P70/50
Inventor 卢兰兰刘壮肖旭东
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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