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Preparation method of copper indium selenide nanocrystalline material

A nanocrystalline material, copper indium selenide technology, applied in chemical instruments and methods, selenium/tellurium compounds, inorganic chemistry, etc., can solve the problems of poor optimization of devices and low energy conversion efficiency

Inactive Publication Date: 2010-08-18
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the research on copper indium selenide nanocrystals is still in its infancy. At present, researchers in the world have synthesized this material, but the device is not well optimized, resulting in low energy conversion efficiency (the highest reported is 3.2%)

Method used

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  • Preparation method of copper indium selenide nanocrystalline material
  • Preparation method of copper indium selenide nanocrystalline material
  • Preparation method of copper indium selenide nanocrystalline material

Examples

Experimental program
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Effect test

Embodiment 1

[0009] Embodiment 1: 1) at first, the copper chloride of 0.5 millimole, the indium chloride of 0.5 millimole, the selenium powder of 1 millimole are added in the oleylamine of 10 milliliters to obtain mixed solution, then this mixed solution is heated to Insulate at 60°C for 3 hours, while vigorously stirring with nitrogen gas; 2) Next, heat the mixed solution obtained in step 1) to 240°C, while passing nitrogen gas, and condensing and refluxing, vigorously stirring, and reacting for 4 hours; 3) Then, Add 10 ml of ethanol to the solution in step 2) and centrifuge at a speed of 5000 rpm for 5 minutes, remove the supernatant to obtain a precipitate; 4) add 5 ml of chloroform and 10 ml of ethanol to the precipitate, and ultrasonically dissolve the precipitate and mix well , centrifuge at a speed of 5000rpm for 5 minutes, remove the supernatant to obtain a precipitate, then add 5 ml of chloroform and 10 ml of ethanol to the precipitate and repeat 3 times; 5) Finally, add 5 ml of ch...

Embodiment 2

[0010] Embodiment 2: 1) at first, the selenium powder of the cuprous chloride of 1 mmol, the indium chloride of 1 mmol, the selenium powder of 2 mmol are added in the oleylamine of 12 milliliters to obtain mixed solution, then this mixed solution is heated Keep warm at 80°C for 2 hours, while stirring vigorously with nitrogen gas; 2) Next, heat the mixed solution obtained in step 1) to 210°C, while passing nitrogen gas, and condense and reflux, stir vigorously, and react for 4 hours; 3) Then , add 15 milliliters of ethanol to the solution in step 2) and centrifuge at a speed of 6000 rpm for 4 minutes, remove the supernatant to obtain a precipitate; 4) add 10 milliliters of chloroform and 20 milliliters of ethanol to the precipitate, and ultrasonically dissolve and mix the precipitate Evenly, centrifuge at a speed of 6000rpm for 4 minutes, remove the supernatant to obtain a precipitate, then add 10 ml of chloroform and 20 ml of ethanol to the precipitate and repeat 3 times; 5) F...

Embodiment 3

[0011] Embodiment 3: 1) at first, the copper chloride of 1.5 millimoles, the indium chloride of 1.5 millimoles, the selenium powder of 3 millimoles are added in the oleylamine of 8 milliliters to obtain mixed solution, then this mixed solution is heated to Insulate at 65°C for 2.5 hours, while stirring vigorously with nitrogen gas; 2) Next, heat the mixed solution obtained in step 1) to 230°C, while passing nitrogen gas, and condense and reflux, stir vigorously, and react for 2 hours; 3) Then, Add 20 milliliters of ethanol to the solution in step 2) and centrifuge at a speed of 8000 rpm for 3 minutes, remove the supernatant to obtain a precipitate; 4) add 8 milliliters of chloroform and 16 milliliters of ethanol to the precipitate, and ultrasonically dissolve the precipitate and mix well , centrifuged at a speed of 8000rpm for 3 minutes, removed the supernatant to obtain a precipitate, then added 8 ml of chloroform and 16 ml of ethanol to the precipitate and repeated 3 times; 5...

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Abstract

The invention relates to a preparation method of a copper indium selenide nanocrystalline material, which adopts a solvothermal method for reaction at a high temperature so as to prepare a copper indium selenide nanocrystalline material with a regular shape, a uniform size, a particle size of about 20nm and good crystallinity. Compared with the preparation of the traditional copper indium selenide film, the preparation of the copper indium selenide nanocrystalline material has the advantages of good repeatability, simple process, low environmental pollution, each control of the stoichiometric ratio of atoms and the like. Since the forbidden bandwidth of the copper indium selenide is around 1.04eV, the nanocrystalline material can be used for preparing the absorption layer of the solar cell through drip casting or film spinning, and can also be used for sensitizing titania, zinc oxide or other materials with a wide forbidden band, so as to improve the energy conversion efficiency of the solar cell.

Description

technical field [0001] The invention relates to a synthesis method of a ternary compound semiconductor nanocrystal, in particular to a preparation method of a copper indium selenide nanocrystal material. Background technique [0002] Solar cell is a typical green energy, it is the best choice to solve the two problems of energy and environment in the 21st century, the solar industry will be one of the industries with the most development potential in the 21st century. Silicon materials and compound semiconductor materials occupy an important position in solar cell materials, and high cost is the main obstacle to the development and application of silicon crystal and compound semiconductor solar cells. To solve the problem of the cost of solar cells, on the one hand, it is necessary to reduce the cost of materials and production, and on the other hand, efforts must be made to improve the photoelectric conversion efficiency. But in the process of realizing these goals, some s...

Claims

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Application Information

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IPC IPC(8): C01B19/00
Inventor 阙文修申凤宇
Owner XI AN JIAOTONG UNIV
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