Method for electrodepositing copper indium diselenide or copper indium gallium selenide film by special pulsing power source

A special pulse, copper indium gallium selenide technology, used in the electrodeposition preparation of solar cell semiconductor materials, electrodeposition copper indium gallium selenide or copper indium gallium selenide thin film field, can solve the problem of surface roughness, deposition current reduction, cathode electrode resistance increase Advanced problems, to achieve the effect of flat and dense surface, tight bonding and high polarization strength

Inactive Publication Date: 2009-11-04
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at present, more studies on pulse electrodeposition use single pulses, such as square waves, for deposition. The surface morphology of the obtained films is rough, the composition deviates from the stoichiometry, and some samples appear impurity phases.
The first reason is that single pulse does have certain advantages for single element deposition, but for multi-element co-deposition, especially for elements with far different standard electrode potentials, su

Method used

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  • Method for electrodepositing copper indium diselenide or copper indium gallium selenide film by special pulsing power source
  • Method for electrodepositing copper indium diselenide or copper indium gallium selenide film by special pulsing power source
  • Method for electrodepositing copper indium diselenide or copper indium gallium selenide film by special pulsing power source

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Embodiment 1

[0029] Electrodeposition adopts a two-electrode electrolysis system, uses Pt mesh as the counter electrode (anode), and ITO conductive glass as the working electrode (cathode), and deposits in the pulse constant current mode. The electrolyte composition is 0.008mol / LCuSO 4 , 0.1mol / L In 2 (SO 4 ) 3 , 0.016mol / L H 2 SeO 3, 0.5mol / L KCl and 0.5mol / L trisodium citrate 20mL deionized aqueous solution (temperature 25 ℃), the solution pH value is adjusted to 1.6 with dilute sulfuric acid (10%, volume); Utilize Chinese patent ZL 200720089930.4 The modulated output of the power supply unit of the published electrochemical water treatment system is as follows: figure 1 The special pulse power supply (square wave modulated by bell wave) used for the electrodeposition of copper indium selenide or copper indium gallium selenide film of the present invention shown, the pulse frequency is 150kHz, the duty ratio is 12.5%, the deposition current is 2mA, and the deposition time 30min, th...

Embodiment 2

[0031] Electrodeposition adopts a two-electrode electrolysis system, uses Pt mesh as the counter electrode (anode), and FTO conductive glass as the working electrode (cathode), and deposits in the pulse constant current mode. The electrolyte composition is 0.005mol / LCuCl 2 , 0.01mol / L InCl 3 , 0.01mol / L SeO 3 50mL deionized aqueous solution (temperature 20 ℃), adjust the pH value of the solution to 1.0 with dilute hydrochloric acid (10%, volume); Utilize the power supply device modulation output of the electrochemical water treatment system announced in the Chinese patent ZL 200720089930.4 as figure 1 The special pulse power supply (square wave modulated by bell wave) used for the electrodeposition of copper indium selenide or copper indium gallium selenide thin film of the present invention shown, the pulse frequency is 26kHz, the duty cycle is 1%, the deposition current is 0.5mA, the deposition The copper indium selenium prefabricated film was prepared in 10 minutes; then ...

Embodiment 3

[0033] Electrodeposition adopts a two-electrode electrolysis system, using Pt mesh as the counter electrode (anode), metal Mo as the working electrode (cathode), and depositing in pulse constant current mode. When the electrolyte composition is 0.01mol / LCu(NO 3 ) 2 , 0.16mol / L In(NO 3 ) 3 , 0.05mol / L SeO 2 , 1mol / L K 2 SO 4 and 50ml deionized aqueous solution (temperature 30 ℃) of 1mol / L trisodium citrate, the solution pH value is adjusted to 2.0 with dilute sulfuric acid (10%, volume); The power supply unit modulates the output as figure 1 The special pulse power supply (square wave modulated by bell wave) used for the electrodeposition of copper indium selenide or copper indium gallium selenide film of the present invention shown, the pulse frequency is 400kHz, the duty cycle is 100%, the deposition current is 3mA, and the deposition time 120min makes the copper indium selenium prefabricated film; Then the copper indium selenium prefabricated film is placed in the vac...

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Abstract

The invention particularly discloses a method for electrodepositing a copper indium diselenide or copper indium gallium selenide film by a special pulsing power source. The method comprises the following steps: in electrolytic solution containing copper, indium, selenium ions or copper, indium, gallium and selenium ions, a preformed film is prepared through electrodepositing on a cathode substrate by adopting bell-shaped wave adjusted square-wave pulse; and then, the preformed film is annealed under vacuum, nitrogen or argon having a solid selenide source to generate the copper indium diselenide or copper indium gallium selenide film finally, wherein, parameters of pulse electrodepositing are as follows: pulse frequency is between 26 and 400kHz, duty factor is between 1 and 100 percent; the mode of electrodepositing is pulse constant potential or pulse constant current, the range of the pulse potential is between 0.5 and 4V, the range of the pulse current is between 0.5 and 3mA, and the deposit time is between 10 and 120min. The method has high frequency and high strength of burst pulse polarization; the method leads ions requiring depositing to perform resonance through adjusting frequency in large scale to effectively deposit the ions; and the method can less deposit current, and realize deposit of elements with more negative potential of a standard electrode without adverse phenomena of liberation of hydrogen.

Description

technical field [0001] The invention belongs to the field of new energy sources of optoelectronic materials, and relates to an electrodeposition preparation method of semiconductor materials for solar cells, in particular to a method for electrodepositing copper indium selenium or copper indium gallium selenium thin films by using a special pulse power supply. Background technique [0002] Solar energy is one of the most important renewable energy sources. Photovoltaic power generation is considered to be the hope of human future energy. Among all kinds of photovoltaic cells, copper indium selenide or copper indium gallium selenide based thin film solar cells are valued due to their advantages of high absorption rate, high conversion efficiency, strong radiation resistance, low manufacturing cost and stable battery performance, and are considered to be A promising new generation of solar cells. [0003] At present, the methods for preparing copper indium selenide or copper...

Claims

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Application Information

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IPC IPC(8): C25D5/18C25D5/10
Inventor 杜祖亮王晓丽王广君万绍明张兴堂
Owner HENAN UNIVERSITY
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