Method for electrodepositing copper indium diselenide or copper indium gallium selenide film by special pulsing power source

Abstract

The invention particularly discloses a method for electrodepositing a copper indium diselenide or copper indium gallium selenide film by a special pulsing power source. The method comprises the following steps: in electrolytic solution containing copper, indium, selenium ions or copper, indium, gallium and selenium ions, a preformed film is prepared through electrodepositing on a cathode substrate by adopting bell-shaped wave adjusted square-wave pulse; and then, the preformed film is annealed under vacuum, nitrogen or argon having a solid selenide source to generate the copper indium diselenide or copper indium gallium selenide film finally, wherein, parameters of pulse electrodepositing are as follows: pulse frequency is between 26 and 400kHz, duty factor is between 1 and 100 percent; the mode of electrodepositing is pulse constant potential or pulse constant current, the range of the pulse potential is between 0.5 and 4V, the range of the pulse current is between 0.5 and 3mA, and the deposit time is between 10 and 120min. The method has high frequency and high strength of burst pulse polarization; the method leads ions requiring depositing to perform resonance through adjusting frequency in large scale to effectively deposit the ions; and the method can less deposit current, and realize deposit of elements with more negative potential of a standard electrode without adverse phenomena of liberation of hydrogen.

Description

technical field [0001] The invention belongs to the field of new energy sources of optoelectronic materials, and relates to an electrodeposition preparation method of semiconductor materials for solar cells, in particular to a method for electrodepositing copper indium selenium or copper indium gallium selenium thin films by using a special pulse power supply. Background technique [0002] Solar energy is one of the most important renewable energy sources. Photovoltaic power generation is considered to be the hope of human future energy. Among all kinds of photovoltaic cells, copper indium selenide or copper indium gallium selenide based thin film solar cells are valued due to their advantages of high absorption rate, high conversion efficiency, strong radiation resistance, low manufacturing cost and stable battery performance, and are considered to be A promising new generation of solar cells. [0003] At present, the methods for preparing copper indium selenide or copper...

AI Technical Summary

Problems solved by technology

However, at present, more studies on pulse electrodeposition use single pulses, such as square waves, for deposition. The surface morphology of the obtained films is rough, the composition deviates from the stoichiometry, and some samples appear impurity phases.

The first reason is that single pulse does have certain advantages for single element deposition, but for multi-element co-deposition, especially for elements with far different standard electrode potentials, such as Cu, In, Ga, Se, the adjustment ability is limited; the second is to use Three-electrode constant potential deposition, because the product of electrodeposition is non-conductive, with the progress of electrodeposition, the thickness of the deposit increases, the resistance of the cathode electrode continues to increase, and the deposition current continues to decrease, which will cause the surface to be rough. The film layer is not firmly bonded to the substrate

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