Ellipsoidal high-power microwave plasma diamond film deposition device

Abstract

The invention relates to an ellipsoidal high-power microwave plasma diamond film deposition device which is composed of a staisecase annular microwave coupled system, an annular quartz microwave window arranged at the staircase of an annular antenna, an ellipsoidal microwave resonant cavity, an adjustable deposition table, a conical upper reflecting body, an adjustable cylindrical lower reflecting body, an inlet and outlet, a temperature measurement hole, a view window and the like. By utilizing the design of the ellipsoidal upper and lower focal points, the conical upper microwave reflecting body is positioned on the upper focal point, the deposition table is positioned on the lower focal point, and the electric field is distributed centrally, so the excited plasma has high position stability and high density; the hidden microwave window can be protected from plasma heating, pollution and etching; the adjustable microwave lower reflecting body and the deposition table optimize the plasma distribution in real time; the inner wall of the ellipsoidal resonant cavity is far from the high-temperature plasma region, so that the heat radiation of the plasma to the inner wall of the cavity is reduced, thereby avoiding depositing foreign matters; and all the components of the device are cooled with water. The device can implement high-efficiency deposition of a large-area high-quality diamond film under the condition of high power.

Description

technical field [0001] The invention belongs to the technical field of microwave plasma chemical vapor deposition, and in particular provides a high-power microwave plasma chemical vapor deposition device that can be applied to the preparation of large-area high-quality diamond films. Background technique [0002] Diamond has excellent properties such as high hardness, high room temperature thermal conductivity (greater than 20W / cm·K), low expansion coefficient, high chemical inertness, high optical transparency, etc. It is used in heat sinks of high-power electronic devices, high-power Industrial fields such as lasers and infrared windows have great application value. To achieve these important applications, large-area, high-quality self-supporting diamond films must be efficiently fabricated. [0003] Among various chemical vapor deposition methods, microwave plasma chemical vapor deposition (MPCVD) has become a high The preferred method for quality diamond films. [00...

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Problems solved by technology

[0013] The purpose of the present invention is to provide a kind of efficient high-power microwave plasma diamond film chemical vapor deposition device, it will be able to overcome the parts distances such as microwave window or microwave antenna, deposition chamber wall in existing various MPCVD diamond film deposition devices The shortcomings of the microwave power increase of the MPCVD device, such as the proximity of the plasma, the difficulty of adjusting the device, and the difficulty of direct water cooling, etc., and absorbing the advantages of each device, design a perfect adjustment mechanism, the plasma will not damage the microwave window, and will not Carbon and carbon compounds deposit and cause pollution in the device chamber, all parts of the device are easy to be directly cooled by water, and can obtain a stable high-density plasma MPCVD device to achieve efficient deposition of large areas at high power The purpose of high quality diamond film

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