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Copper indium gallium selenide (CIGS) three-dimensional nano structure array prepared by self-assembled electrodeposition-free mode based on solution method

A copper indium gallium selenide, three-dimensional nanotechnology, applied in the field of nanomaterials, can solve the problems of poor control of CIGS array morphology, high cost of electrodeposition, complicated template removal, etc., to achieve simple template removal and high growth speed , low cost effect

Inactive Publication Date: 2014-05-28
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technology is relatively complicated to remove the template, the cost of electrodeposition is high, and the morphology of the prepared CIGS array cannot be well controlled.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] This embodiment includes the following steps:

[0031] 1. Use CuCl 2 , InCl 3 , CaCl 3 , and H 2 SeO 2 Solution according to Cu 2+ : In 3+ : Ga 3+ : SeO 3 2 =1:3:4:2 molar ratio to prepare the original mixed solution.

[0032] 2. Stir the original mixed solution fully and evenly, adjust the pH value of the solution to 2.0 with NaOH solution, and obtain the growth solution of copper indium gallium selenide.

[0033] 3. Use the high-field phosphoric acid alumina template prepared by two-step anodization as the substrate, with a diameter of 20nm, sputter a layer of metal molybdenum by magnetron sputtering, and the background vacuum is 4×1.0 -4 Pa, the working pressure is 12Mtorr, the power is 30w, and the sputtering time is 4 minutes, so as to serve as the substrate for growing copper indium gallium selenide nano-arrays.

[0034] 4. At room temperature, put the substrate prepared in Step 3 into the CuInGaSe growth solution with a pH value of 2.0. Grow for 30 minu...

Embodiment 2

[0038] 1. Add CuCl 2 , InCl 3 , CaCl 3 , and H 2 SeO 2 Solution according to Cu 2+ : In 3+ : Ga 3+ : SeO 3 2 =1:2:4:2 molar ratio to prepare the original mixed solution.

[0039] 2. Stir the original mixed solution fully and evenly, adjust the pH value of the solution to 2.1 with NaOH solution, and obtain a growth solution of copper indium gallium selenide.

[0040] 3. Use the high-field phosphoric acid alumina template prepared by two-step anodization as the substrate, with a diameter of 250nm, sputter a layer of metal molybdenum by magnetron sputtering, and the background vacuum is 3×1.0 -4 Pa, the working pressure is 8mtorr, the power is 50w, and the sputtering time is 20 minutes, so as to serve as the substrate for growing CIGS nano-arrays.

[0041] 4. At room temperature, put the substrate prepared in step 3 into the CuInGaSe growth solution with a pH value of 2.1. Grow for 40 minutes. Then the grown samples were taken out, rinsed with deionized water and drie...

Embodiment 3

[0044] 1. Use CuCl 2 , InCl 3 , CaCl 3 , and H 2 SeO 2 Solution according to Cu 2+ : In 3+ : Ga 3+ : SeO 3 2 =1:3:4:3 molar ratio to prepare the original mixed solution.

[0045] 2. Stir the original mixed solution fully and evenly, adjust the pH value of the solution to 2.2 with NaOH solution, and obtain the growth solution of copper indium gallium selenide.

[0046] 3. Use the high-field phosphoric acid alumina template prepared by two-step anodization as the substrate, with a diameter of 190nm, sputter a layer of metal molybdenum by magnetron sputtering, and the background vacuum is 6×1.0 -4 Pa, the working pressure is 10mtorr, the power is 80w, and the sputtering time is 10 minutes, so as to serve as the substrate for growing CIGS nano-arrays.

[0047] 4. At room temperature, put the substrate prepared in step 3 into the CuInGaSe growth solution with a pH value of 2.2. Grow for 5 minutes. Then the grown samples were taken out, rinsed with deionized water and dr...

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Abstract

Provided is a method for preparing a copper indium gallium selenide (CIGS) three-dimensional nano structure array in a self-assembled electrodeposition-free mode. A porous alumina template with the back sputtered with molybdenum and the periphery provided with aluminum supports serves as a CIGS growth substrate which is immersed into copper ions, indium ions, gallium ions and selenide ions mixed liquor serving as copper indium gallium selenide growth-promoting medium to enable copper, indium, gallium and selenide to grow on the CIGS growth substrate in a self-assembled mode, and CIGS materials with three-dimensional nano structures can be obtained after annealing is performed. Therefore, preparation methods of nano structure CIGS are enriched, and material support for researching preparation of high-efficiency, large-area, low-power-consumption and low-cost nano solar cells and p-n node devices is provided. The preparation method is simple relatively, no expensive vacuum equipment is needed, and the preparation method has no special requirements for the surrounding and is applicable to popularization in the industry.

Description

technical field [0001] The invention relates to a nanomaterial in the technical field of solar cell materials, in particular to a three-dimensional copper indium gallium selenide nanostructure array prepared by self-assembly electroless deposition based on a solution method for a p-n junction solar cell with a nanostructure. Background technique [0002] The compound semiconductor chalcopyrite copper indium gallium selenide is an ideal material for preparing thin film solar cells. It has high visible light absorption coefficient, adjustable bandgap width, long-term stability, reliability, high temperature characteristics and weak light characteristics. Copper indium gallium selenide is currently the highest conversion efficiency record in the laboratory exceeding 20%. However, the CIGS thin film battery with high conversion efficiency is realized by the CIGS polycrystalline thin film prepared by the vacuum technology-co-evaporation method as the absorber layer, but due to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/032B82Y40/00B82Y30/00C25D11/12C25D11/08C25D11/10C23C14/35C23C14/18
CPCB82Y30/00B82Y40/00C23C14/18C23C14/35C25D11/08C25D11/12C25D11/24H01L21/02422H01L21/02568H01L21/02628H01L31/0322Y02E10/541Y02P70/50
Inventor 马荔张彬周桃郑茂俊
Owner SHANGHAI JIAO TONG UNIV
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