Alkali metal doping method for preparing CIGS absorbing layer on flexible substrate

A flexible substrate and absorption layer technology, which is applied in the field of alkali metal doping of CIGS absorption layers prepared on flexible substrates, can solve the problem of difficulty in applying large-area CIGS deposition and large-scale production, affecting the growth process of CIGS thin films, and the crystallization quality of CIGS thin films. Reduce problems such as reducing, and achieve the effect of being beneficial to large-scale production, improving photoelectric conversion efficiency, and improving P-type conductivity characteristics

Active Publication Date: 2016-06-29
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Description
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  • Application Information

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Problems solved by technology

The disadvantage of this technique is that the pre-set layer containing alkali metal affects the adhesion of CIGS absorber layer on flexible substrates (especially plastic substrates) and affects the CIGS thin film growth process
The disadvantage of this technology is that the co-evaporation of alkali metal compounds affects the crystallization of the absorber layer and the growth of the film, resulting in a decrease in the crystallization quality of the CIGS film, which in turn affects the performance of the battery.
After

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Embodiment 1

[0031] An alkali metal doping method for preparing a CIGS absorbing layer on a flexible substrate, using a low-temperature co-evaporation process to deposit a small-area CIGS absorbing layer, and preparing a flexible CIGS thin film solar cell. Using polyimide with a thickness of 50 μm as the substrate, a thin layer of Mo with a thickness of 0.5 μm to 1 μm was first deposited on the substrate by DC magnetron sputtering process as the positive electrode of the battery, and a CIGS thin film was deposited on it. During the deposition process, the vacuum pressure of the chamber was kept at 1×10 -3 Pa or so. The first step is to co-evaporate In, Ga and Se elements at a substrate temperature of 300°C-350°C to form (In 0.7 Ga 0.3 ) 2 Se 3 For the preset layer, the temperature of the evaporation source of Ga and In is kept constant at 900°C-1000°C and 800°C-900°C respectively, the evaporation source of Se is kept constant in the range of 220°C-280°C, the evaporation time is 20min, ...

Embodiment 2

[0034] See attached image 3 with Figure 4 .

[0035] A method for preparing CIGS absorbing layer alkali metal doping on a flexible substrate, using a metal (such as stainless steel, titanium, etc.) foil with a thickness of 50 μm as a substrate to prepare a flexible CIGS absorbing layer and a solar cell, the cell structure is the same as in Example 1. Using the same evaporation process parameters and alkali metal doping method as in Example 1, a stainless steel substrate CIGS thin film solar cell was obtained.

[0036] attached image 3 with Figure 4 The medium vacuum evaporation chamber is made of #316 stainless steel plate through seamless welding process; the water cooling pipeline is seamlessly welded on the surface of the vacuum chamber, and the temperature of the cold water flowing in is about 10°C. The right side of the vacuum chamber is equipped with a vacuum pumping system 4, and the left side is equipped with an ionization gauge 5 for testing the pressure of th...

Embodiment 3

[0039] See attached Figure 5 .

[0040] An alkali metal doping method for preparing a CIGS absorbing layer on a flexible substrate, using a roll-to-roll co-evaporation process to deposit a large-area CIGS absorbing layer, and preparing a flexible CIGS thin film solar cell. Using polyimide with a thickness of 50 μm as the substrate, a 0.5 μm-0.8 μm thick Mo back electrode was first deposited on the substrate by a DC magnetron sputtering process, and a CIGS thin film was deposited on it by roll-to-roll evaporation. Figure 5 The roll-to-roll evaporator shown. The device is in the shape of a rectangular parallelepiped as a whole, and is made of #316 stainless steel plate through seamless welding process; the water-cooling pipeline is seamlessly welded on the surface of the vacuum chamber, and the temperature of the cold water flowing in is about 10°C. The device includes a first chamber 17 and a second chamber 18 , a vacuum valve 24 and a vacuum system 25 . The first chamber ...

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Abstract

The invention relates to an alkali metal doping method for preparing a CIGS absorbing layer on a flexible substrate, and belongs to the technical field of copper indium gallium selenide (CIGS) thin film solar cells. The alkali metal doping method comprises that a CIGS absorbing layer is deposited by using a co-evaporation process; and with the increase of Cu content in the absorbing layer, the thin film growth experiences a copper-poor to copper-rich process, in the copper-rich process, when Cu(In+Ga)>1 in a CIGS thin film, the evaporation of the Cu element is stopped so that the slightly copper-rich CIGS thin film can finally become copper-poor, then the In and Ga atoms are evaporated until the deposition thickness is 1/10-3/10 of the thickness of the absorbing layer, in this process, an alkali metal compound is co-evaporated, the doping amount is 0.08-0.12% of the atomic ratio with respect to the CIGS thin film, the temperature of the substrate is reduced to the room temperature, and the CIGS thin film having a thickness of 1-3 <mu>m is obtained. The invention has the advantages of having a simplified process, a high production efficiency and thin film crystal high-quality, increasing the carrier concentration of the absorbing layer, lowering the resistivity, improving the electrical properties of the thin film cell, thus improving the photoelectric conversion efficiency of the CIGS thin film solar cell and the like.

Description

technical field [0001] The invention belongs to the technical field of copper indium gallium selenide thin film solar cells, in particular to an alkali metal doping method for preparing a CIGS absorption layer on a flexible substrate. Background technique [0002] At present, copper indium gallium selenide (CIGS) belongs to group I-III-VI quaternary compound semiconductors and has a chalcopyrite crystal structure. CIGS thin-film solar cells using this material as a light-absorbing layer have high conversion efficiency and good stability. , strong anti-radiation ability, etc., especially CIGS thin film solar cells prepared on flexible substrates, which are foldable and bendable, and their mass specific power is generally greater than 600W / kg, and the battery components are suitable for roll-to-roll preparation and monolithic Integration, easy to achieve mass production, and a wider range of applications. At present, the key problem and technical difficulty restricting the pe...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032
CPCY02P70/50
Inventor 王赫杨亦桐邓朝文申绪男赵岳乔在祥赵彦民
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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