Black silicon passivation method

A technology of black silicon and passivation film, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of many dangling bonds, difficulty in black silicon passivation, and lower conversion efficiency of solar cells, so as to improve conversion efficiency , the effect of reducing the density of states

Inactive Publication Date: 2011-03-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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Problems solved by technology

[0005] However, due to the non-flat inverted pyramid, forest-like nail-like or needle-like structures of black silicon, the surface area of ​​black silicon has a large surface state, and there are many dangling bonds on the surface, which reduces the production capacity of black silicon. The conversion efficiency of the solar cell
In addition, because black silicon has structures such as inverted pyramids, forest-like nails or needles, it becomes more difficult to passivate black silicon

Method used

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Embodiment Construction

[0029] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0030] Plasma enhanced chemical vapor deposition (Plasma Enhanced Chemistry Vapor Deposition, PECVD) is to place the sample on the sample stage in the deposition chamber, enter the process gas in the chamber, and generate plasma by gas glow discharge under the action of the plasma power supply , in the plasma atmosphere, the reactive gas is more easily decomposed, dissociated and ionized, thereby increasing the activity of the reactant, and the product is adsorbed on the surface of the sample, and deposited to form a thin film.

[0031] The present invention utilizes PECVD growth film to carry out the main mechanism of black silicon passivation to be: the mixed gas that feeds in the deposition chamber discharges under the action of plasma power supply to generate plasma, and the reaction gas in the mixed gas is as silane (SiH ...

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Abstract

The invention relates to the technical field of photoelectron device manufacture, in particular to a black silicon passivation method. The method comprises the following steps of: putting black silicon into the chamber of a passivation device; adjusting the process parameters of the passivation device to a preset working range, and introducing mixed gas into the passivation device, wherein the mixed gas comprises reaction gases; and depositing a passivation film on the surface of the black silicon by using plasma enhanced chemical vapor deposition. The method reduces the surface state density of the black silicon so as to improve the conversion efficiency of a solar cell prepared by using the black silicon.

Description

technical field [0001] The invention relates to the technical field of optoelectronic device manufacturing, in particular to a black silicon passivation method. Background technique [0002] Black silicon is a revolutionary new material structure in the electronics industry, usually referring to a silicon surface or a silicon-based film with a high absorption rate. [0003] In the late 1990s, the research group of Professor Eric Mazur of Harvard University found that using a femtosecond laser to irradiate a silicon wafer in a certain gas environment can produce micron particles in the laser irradiation area on the silicon surface during the study of the interaction between femtosecond laser and matter. level spike structure. Then they developed a new technology for microstructuring the silicon surface—using a femtosecond laser to etch silicon in a certain gas environment to prepare a new material with a certain etching area. The originally gray and shiny silicon surface was...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037
CPCY02E10/50C23C16/345H01L31/1868Y02P70/50
Inventor 夏洋刘邦武李超波刘杰李勇滔陈瑶
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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