Preparation method of concentrating solar cell chip capable of preventing edge leakage

A technology for solar cells and edge leakage, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of rough surface of cutting edge, difficulty in depositing passivation film, difficulty in forming passivation film, etc., to achieve excellent passivation edge, High quality and reflective performance, anti-destructive effect

Active Publication Date: 2011-02-09
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually in semiconductor optoelectronic devices, the surface of the edge of the dicing line is generally rough, it is difficult to deposit a passivation film, it is difficult to form a passivation film of good quality, and it is easy to damage the passivation film during cutting, and even cause the passivation film to fall off

Method used

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  • Preparation method of concentrating solar cell chip capable of preventing edge leakage
  • Preparation method of concentrating solar cell chip capable of preventing edge leakage
  • Preparation method of concentrating solar cell chip capable of preventing edge leakage

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Embodiment Construction

[0013] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0014] A method for manufacturing a concentrated solar cell chip that prevents edge leakage, the process steps are:

[0015] Such as figure 1 As shown, use acetone and isopropanol to ultrasonically remove the surface contamination of the chip, rinse with a large amount of deionized water, remove the surface oxide layer with a mixed solution of citric acid, hydrogen peroxide or sulfuric acid, and hydrogen peroxide to expose a fresh surface, blow dry with nitrogen, and dry ;

[0016] After gluing, pre-baking, exposure, post-baking, developing, rinsing, film hardening and other steps, photolithography of the front electrode pattern;

[0017] The front electrode metal is evaporated by electron beam evaporation or magnetron sputtering;

[0018] Ultrasonic stripping of metal in acetone solution to form a positive electrode pattern;

[0019] Remove the re...

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Abstract

The invention relates to a preparation method of a concentrating solar cell chip capable of preventing edge leakage and the method adopts the accurate half-cutter cutting method. The method comprises the following steps: the half-cutter cutting blade of which cutting edge has an inclined side is used to cut a groove along the cutting street of the battery chip, wherein the side wall of the groove also has a certain angle of inclination; chemical polishing is performed to the side wall of the groove; a transparent insulation material used as the anti-reflection film is covered on the surface of the battery chip, the surface of battery chip is passivated to avoid current leakage; and a conventional blade of which edge width is less than that of the half-cutter cutting blade is used to scratch the chip and form a single solar battery chip. The cutting blade of which edge has an angle of inclination is used to perform half-cutter cutting to the chip so that the side wall of the cutting street has the same angle of inclination, the chip can be prevented from damaging during the scratching process and a passivating film with high quality and reflecting property can be prepared on the chip; the width of the blade used for scratching the chip is less than that of the half-cutter cutting blade, thus preventing that the passivating film is damaged during the scratching process; and good passivation edge of the solar battery chip can be obtained and the edge leakage can be prevented.

Description

technical field [0001] The invention relates to a method for preparing a solar cell chip, in particular to a method for manufacturing a concentrated solar cell chip capable of preventing edge leakage. Background technique [0002] At present, concentrating solar power generation technology mostly uses multi-junction solar cells based on gallium arsenide materials, and its concentrating multiple can reach 500 or even thousands of times with the progress of material performance and process technology, and the chip size is smaller than that of traditional silicon material cells. Much smaller, greatly reducing the consumption of semiconductor materials, is one of the most promising solar cell technology. However, due to the reduction of the chip size, the ratio of the perimeter of the battery edge to the area of ​​the battery chip is greatly increased, which leads to the edge leakage current having a great impact on the performance of the battery. Current has little effect on b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/18H01L31/184H01L21/3043Y02E10/544H01L31/0304H01L31/0735H01L31/186
Inventor 吴志敏梁兆煊林桂江熊伟平许文翠
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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