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N-type double-sided solar cell and preparation method thereof

A solar cell, N-type technology, applied in the field of solar cells, can solve problems such as complex process flow, and achieve the effects of simple process steps, precise ion implantation technology, and low light-induced attenuation

Inactive Publication Date: 2016-04-13
JOLYWOOD SUZHOU SUNWATT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the manufacturing process of N-type double-sided cells mostly adopts the process of thermal diffusion to realize the doping of the emitter and the base. During the manufacturing process, it is necessary to use mask technology to realize the diffusion doping of one side, and it also needs to be etched to remove the edge. Borosilicate glass or phosphosilicate glass diffused on the edge of the silicon wafer to prevent edge leakage, so the process is relatively complicated

Method used

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  • N-type double-sided solar cell and preparation method thereof
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Embodiment 1

[0043] See Figure 1 to Figure 6 as well as Figure 8 As shown, the manufacturing method of an N-type double-sided solar cell provided in this embodiment includes the following steps:

[0044] (1) Select the N-type crystalline silicon substrate and perform texturing treatment on the front surface of the N-type crystalline silicon substrate; in this embodiment, as figure 1 The selected N-type crystalline silicon substrate shown is The crystal orientation of the N-type single crystal silicon substrate 1. The N-type single crystal silicon substrate 1 of this embodiment is an N-type CZ single crystal silicon substrate (single crystal silicon obtained by the Czochralski method), and the N-type single crystal silicon substrate The resistivity of 1 is 0.5 to 15 Ω·cm, preferably 1 to 5 Ω·cm; the thickness of the N-type single crystal silicon substrate 1 is 50 to 300 μm, preferably 80 to 200 μm; the specific method of texturing is the N-type single crystal The silicon substrate 1 is place...

Embodiment 2

[0056] See Figure 1 to Figure 5 as well as Figure 7 , Picture 9 As shown, the manufacturing method of an N-type double-sided solar cell provided in this embodiment includes the following steps:

[0057] (1) Select the N-type crystalline silicon substrate and perform texturing treatment on the front surface of the N-type crystalline silicon substrate; in this embodiment, as figure 1 The selected N-type crystalline silicon substrate is an N-type single-crystal silicon substrate 1 with (100) crystal orientation. The N-type single-crystal silicon substrate 1 of this embodiment is an n-type CZ single-crystal silicon substrate (according to Czochralski growth). Single crystal silicon obtained by the method), the resistivity of the N-type single crystal silicon substrate 1 is 0.5-15 Ω·cm, preferably 1 to 5 Ω·cm; the thickness of the N-type single crystal silicon substrate 1 is 50-300 μm, preferably 80- 200μm; the specific method of texturing treatment is to place the N-type single cr...

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Abstract

The invention relates to an N-type double-sided solar cell and a preparation method thereof. According to the preparation method of the N-type double-sided solar cell, fabrication of a p+ doped region on the front surface of a silicon substrate and an n+ doped region on the back surface of the silicon substrate is achieved by a technique of combining boron diffusion and phosphorus ion implantation; passivation of the front surface and the rear surface of the silicon substrate and antireflection of the front surface are achieved by a composite dielectric film of two or three of SiO<2>, Al<2>O<3> and SiN<x>; and finally metal contact of the p+ doped region on the front surface of the silicon substrate and the n+ doped region on the back surface is achieved through silk-screen printing and co-sintering technologies, and fabrication of the N-type double-sided solar cell is facilitated. According to the preparation method provided by the invention, an ion implantation technique is introduced into a fabrication technology of the N-type double-sided solar cell, so that a mask technology can be omitted; edge etching is not required; and the N-type double-sided solar cell fabricated by the ion implantation technique is high in photoelectric conversion efficiency, relatively concentrated in efficiency distribution and high in yield.

Description

Technical field [0001] The invention relates to the field of solar cells, in particular to an N-type double-sided solar cell and a preparation method thereof. Background technique [0002] Solar cell is a kind of semiconductor device that converts light energy into electric energy. Low production cost and high energy conversion efficiency have always been the goal pursued by the solar cell industry. The n-type solar cell has no light attenuation and long service life. The advantages are an important development direction for high-efficiency crystalline silicon solar cells, and since the positive and negative electrodes of the n-type solar cell can be made into a conventional H-type grid electrode structure, the cell can not only absorb light on the front, but also on the back surface. It can absorb the reflected and scattered light to generate additional power and realize double-sided power generation. [0003] At present, most of the manufacturing process of N-type double-sided c...

Claims

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Application Information

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IPC IPC(8): H01L31/0264H01L31/042H01L31/18
CPCH01L31/0264H01L31/042H01L31/18Y02E10/50Y02P70/50
Inventor 林建伟刘志锋孙玉海张育政
Owner JOLYWOOD SUZHOU SUNWATT
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