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Diffusing process with low temperature, low surface concentration and high sheet resistance

A diffusion process and low-surface technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increasing the surface recombination rate and reducing the conversion efficiency of silicon wafers of solar cells, so as to reduce the surface recombination rate and improve the efficiency of the battery. efficiency effect

Inactive Publication Date: 2013-02-27
TIANWEI NEW ENERGY HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the technical defect that the traditional diffusion process precipitates a large number of SiP particles, which leads to an increase in the surface recombination rate and thus reduces the conversion efficiency of solar cell silicon wafers, the present invention provides a low-temperature, low-surface-concentration, high-resistance diffusion process

Method used

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  • Diffusing process with low temperature, low surface concentration and high sheet resistance
  • Diffusing process with low temperature, low surface concentration and high sheet resistance
  • Diffusing process with low temperature, low surface concentration and high sheet resistance

Examples

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specific Embodiment 1

[0040] (1) Entering the boat: start the diffusion furnace, and put the silicon wafer to be processed into the furnace tube when the temperature in the furnace tube reaches 750°C;

[0041] After the furnace door is closed, the temperature in the furnace tube is raised to a stable temperature of 750°C, the atmosphere in the furnace is a nitrogen atmosphere, and the nitrogen gas is continuously introduced until the diffusion is completed, and the flow rate is 6L / min;

[0042] (2) Oxidation: At a temperature of 750°C, pass O into the furnace tube 2 , and the time is 15 minutes, forming an oxide film on the surface of the silicon wafer to protect the surface of the silicon wafer and increase the uniformity of diffusion;

[0043] (3) The first step of deposition: At a temperature of 750 ° C, 900 sccmN is passed into the furnace tube 2 POCl 3 , the time is 20min, to complete the constant surface concentration diffusion at low temperature;

[0044] (4) The second step of deposition...

specific Embodiment 2

[0048] (1) Entering the boat: start the diffusion furnace, and put the silicon wafer to be processed into the furnace tube when the temperature in the furnace tube reaches 760°C;

[0049] After closing the furnace door, the temperature in the furnace tube was raised to a stable temperature of 760°C, the atmosphere in the furnace was a nitrogen atmosphere, and the nitrogen gas continued to flow in until the diffusion was completed, with a flow rate of 15 L / min;

[0050] (2) Oxidation: At a temperature of 760°C, pass O into the furnace tube 2 , the time is 10min, a layer of oxide film is formed on the surface of the silicon wafer to protect the surface of the silicon wafer and increase the uniformity of diffusion;

[0051] (3) The first step of deposition: at a temperature of 760 ° C, 800 sccmN is passed into the furnace tube 2 POCl 3 , the time is 15min, to complete the constant surface concentration diffusion at low temperature;

[0052] (4) The second step of deposition: r...

specific Embodiment 3

[0056] (1) Entering the boat: start the diffusion furnace, and when the temperature in the furnace tube reaches 770°C, put the silicon wafer to be processed into the furnace tube; after closing the furnace door, stabilize the temperature in the furnace tube at 770°C, and the atmosphere in the furnace is nitrogen Atmosphere, nitrogen gas is continuously fed until the diffusion is completed, and the flow rate is 10L / min;

[0057] (2) Oxidation: At a temperature of 770°C, pass O into the furnace tube 2 , and the time is 7 minutes, forming an oxide film on the surface of the silicon wafer to protect the surface of the silicon wafer and increase the uniformity of diffusion;

[0058] (3) The first step of deposition: at a temperature of 770 ° C, 600 sccmN is passed into the furnace tube 2 POCl 3 , the time is 10min, to complete the constant surface concentration diffusion at low temperature;

[0059] (4) The second step of deposition: raise the temperature in the furnace tube to ...

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Abstract

The invention relates to a diffusing process with low temperature, low surface concentration and high sheet resistance. The diffusing process with low temperature, low surface concentration and high sheet resistance comprises an entering step, a depositing step, a propelling step and an exiting step. The diffusing process with low temperature, low surface concentration and high sheet resistance is characterized in that the reaction temperatures in the entering and depositing steps are lower than 800 DEG C. Preferably, at least one of the depositing step and the propelling step is carried out by steps according to different temperatures. Furthermore, the depositing step is divided into a first depositing step and a second depositing step. The propelling step comprises a first propelling step and a second propelling step. Preferably, an oxidizing step is further carried out between the entering step and the depositing step. The oxidizing step comprises the step of: introducing oxygen into a reactor. By utilizing the diffusing process with low temperature, low surface concentration and high sheet resistance provided by the invention, the reaction temperatures in the depositing and diffusing steps are reduced compared with the that in the conventional process, so that the surface compositing rate is reduced. Meanwhile, impurities are more beneficially migrated to the impurity absorbing point at the lower diffusing temperature in the diffusing process of polycrystalline silicon, so that the battery efficiency is further improved.

Description

technical field [0001] The invention belongs to the field of solar cell manufacturing, and relates to a low-temperature, low-surface-concentration, high-square-resistance diffusion process. Background technique [0002] A solar cell is a device that directly converts light energy into electrical energy through the photoelectric effect or photochemical effect. Thin-film solar cells based on the photoelectric effect are the mainstream. Sunlight shines on the semiconductor p-n junction, and photons with energy greater than the band gap of silicon form new hole-electron pairs. Under the action of the p-n junction electric field, the photogenerated holes are formed by n The region flows to the p region, and the photogenerated electrons flow from the p region to the n region, and a current is formed after the circuit is turned on. [0003] At present, the square resistance of typical commercial solar cells is 55~65Ω / sq (the unit is ohm per square), and under the premise of good o...

Claims

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Application Information

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IPC IPC(8): H01L21/228
Inventor 罗柯姜丽丽王岩李丽林洪峰路忠林张凤鸣
Owner TIANWEI NEW ENERGY HLDG
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