N-type crystalline silicon two-sided battery and preparing method thereof

A double-sided cell and crystalline silicon technology, applied in the field of solar cells, can solve the problems of complex preparation methods and high preparation costs of double-sided cells, and achieve the effects of improving stability, simplifying manufacturing processes, and increasing short-circuit current density.

Inactive Publication Date: 2014-08-20
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] The double-sided battery can make full use of sunlight, not only the incident sunlight on the front but also the scattered light on the back, etc., which improves the power generation of the battery. This kind of battery is more suitable for applications such as building integration and vertical installation. However, the traditional The preparation method of double-sided batteries is complicated and the production cost is high, which makes the large-scale market of double-sided batteries encounter bottlenecks

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  • N-type crystalline silicon two-sided battery and preparing method thereof

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Embodiment 1

[0035] A method for preparing an N-type crystalline silicon double-sided battery, comprising the following steps:

[0036] 1) Chemical cleaning

[0037] For the surface texture of the N-type silicon substrate with a resistivity of 0.3Ω·cm, a pyramid-shaped light-trapping structure is prepared on the surface of the substrate with dilute sodium hydroxide or potassium hydroxide solution, and then dilute hydrochloric acid and hydrogen Cleaning with hydrofluoric acid to obtain a chemically cleaned N-type silicon substrate;

[0038] 2) Boron doped layer printed on the upper surface

[0039] A boron-doped layer is printed on the upper surface of the chemically cleaned N-type silicon substrate. The shape of the printed boron-doped layer matches the cross-sectional shape of the positive electrode of the battery. After printing, it is dried in a drying oven at 400 ° C to obtain N-type silicon substrate with boron source;

[0040] 3) The lower surface is implanted with phosphorus sour...

Embodiment 2

[0052] A method for preparing an N-type crystalline silicon double-sided battery, comprising the following steps:

[0053] 1) Chemical cleaning

[0054] For the surface texture of the N-type silicon substrate with a resistivity of 10Ω·cm, use dilute sodium hydroxide or potassium hydroxide solution to prepare a pyramid-shaped light-trapping structure on the surface of the substrate, and then use diluted hydrochloric acid and hydrofluoric acid to Acid cleaning to obtain a chemically cleaned N-type silicon substrate;

[0055] 2) Boron doped layer printed on the upper surface

[0056] A boron-doped layer is printed on the upper surface of the chemically cleaned N-type silicon substrate. The shape of the printed boron-doped layer matches the cross-sectional shape of the positive electrode of the battery. After printing, it is dried in a drying oven at 400 ° C to obtain N-type silicon substrate with boron source;

[0057] 3) The lower surface is implanted with phosphorus source a...

Embodiment 3

[0069] A method for preparing an N-type crystalline silicon double-sided battery, comprising the following steps:

[0070] 1) Chemical cleaning

[0071] For the surface texture of the N-type silicon substrate with a resistivity of 0.3Ω·cm, a pyramid-shaped light-trapping structure is prepared on the surface of the substrate with dilute sodium hydroxide or potassium hydroxide solution, and then dilute hydrochloric acid and hydrogen Cleaning with hydrofluoric acid to obtain a chemically cleaned N-type silicon substrate;

[0072] 2) Boron source implanted on the upper surface

[0073] Implant a boron source on the upper surface of the chemically cleaned N-type silicon substrate, and in the case of ion beam energy 6kev, the ion implantation amount is 1×14cm -2 , the target square resistance after annealing is 40Ω / □, and an N-type silicon substrate with a boron source is obtained;

[0074] 3) The lower surface is implanted with phosphorus source and annealed

[0075] A phosphor...

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Abstract

The invention discloses an N-type crystalline silicon two-sided battery and a preparing method thereof and belongs to the technical field of solar batteries. The N-type crystalline silicon two-sided battery comprises an N-type silicon substrate, a boron doping layer, an anode of the battery, an aluminum oxide passivation layer, silicon nitride antireflection layers, an ion implantation phosphor doping layer, a silicon nitride passivation and antireflection layer and a cathode of the battery. The invention further discloses the preparing method for the battery. The method specifically comprises the steps of (1) carrying out chemical cleaning; (2) adding a boron source; (3) injecting a phosphor source to the lower surface and carrying out annealing; (4) preparing the aluminum oxide passivation layer and the first silicon nitride antireflection layer on the upper surface; (5) preparing the second silicon nitride antireflection layer on the lower surface; (6) preparing the anode and the cathode of the battery; (7) carrying out sintering. According to the N-type crystalline silicon two-sided battery, the stability performance of the battery can be improved, absorption of short waves is reduced, blue ray response is improved, the short-circuit current density of the battery is improved, and the efficiency of the battery is improved; the method preparing the battery simplifies the manufacture procedure of the two-sided battery, and the battery has high practicality.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to an N-type crystalline silicon double-sided cell and a preparation method thereof. Background technique [0002] The double-sided battery can make full use of sunlight, not only the incident sunlight on the front but also the scattered light on the back, etc., which improves the power generation of the battery. This kind of battery is more suitable for applications such as building integration and vertical installation. However, the traditional The preparation method of double-sided batteries is complicated and the preparation cost is high, which makes the large-scale market of double-sided batteries encounter a bottleneck. Contents of the invention [0003] Purpose of the invention: The purpose of the invention is to provide an N-type crystalline silicon double-sided battery, which improves the stability of the battery, reduces the absorption of short waves, imp...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/0328H01L31/18
CPCH01L31/02167H01L31/0328H01L31/1804Y02E10/547Y02P70/50
Inventor 高艳涛张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
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