High-reliability PERC back silver conductive paste for crystalline silicon solar cell and preparation process for high-reliability PERC back silver conductive paste

A technology for solar cells and conductive pastes, applied in the manufacture of cables/conductors, conductive materials dispersed in non-conductive inorganic materials, circuits, etc., can solve problems such as difficulty in adapting to low-temperature sintering requirements, sensitivity to sintering temperature, and insufficient reliability. , to achieve the effect of improving density and soldering reliability, reliable contact, and promoting conductive network

Active Publication Date: 2019-06-28
ZHEJIANG GUANGDA ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional lead-free glass system is widely used in PERC back electrode silver paste due to its relatively weak corrosion, but it is sensitive to sintering temperature, and it is difficult to meet the requirements of low-temperature sintering. Good reliability, even if a dense silver thick film back electrode can be obtained, there are still defects of insufficient reliability

Method used

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  • High-reliability PERC back silver conductive paste for crystalline silicon solar cell and preparation process for high-reliability PERC back silver conductive paste
  • High-reliability PERC back silver conductive paste for crystalline silicon solar cell and preparation process for high-reliability PERC back silver conductive paste
  • High-reliability PERC back silver conductive paste for crystalline silicon solar cell and preparation process for high-reliability PERC back silver conductive paste

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Experimental program
Comparison scheme
Effect test

Embodiment 1~5

[0026] Embodiments 1 to 5: a silver conductive paste on the back of a high-reliability PERC crystalline silicon solar cell, the composition and quality of the silver conductive paste on the back is as shown in Table 1:

[0027] Table I

[0028]

[0029] Described glass powder composition is respectively:

[0030] One mole fraction of glass powder consists of 0.1 to 0.2 parts of Bi 2 o 3 , 0.01 to 0.2 parts of Na 2 O, 0.1-0.3 parts of CuO, 0.05-0.2 parts of Al 2 o 3 , 0.35~0.55 parts of SiO 2 , 0~0.2 parts of MnO 2 ;

[0031] The two mole fractions of glass powder consist of 0.2 to 0.4 parts of PbO and 0.2 to 0.5 parts of SiO 2 , 0.01~0.1 parts of Li 2 O, 0.02 to 0.3 parts of Al 2 o 3 , 0.1 to 0.15 parts of TiO 2 , 0.05~0.2 part B 2 o 3 ;

[0032] In the first to fifth implementations, the inorganic additives are nano-CuO, nano-tin powder, and nano-SiO 2 One or more combinations of

[0033] The average particle size of the conductive phase of silver powder i...

Embodiment 1

[0039] Embodiment one test electric performance is as table two:

[0040] Table II

[0041] PASTE

Embodiment 2

[0042] Embodiment two test electrical properties are as table three:

[0043] Table three

[0044] PASTE

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Abstract

The invention discloses high-reliability PERC back silver conductive paste for a crystalline silicon solar cell and a preparation process for the high-reliability PERC back silver conductive paste. The viscosity of the slurry is 20 to 80 Pa.S, and the paste contains the following components in percentage by mass: 0.1%-0.3% of an inorganic additive, 1%-5% of glass powder, 45%-65% of silver powder,2%-6% of ethyl cellulose, 1%-5% of terpilenol, 20%-35% of texanol ester alcohol and a proper amount of an organic additive, wherein the glass powder is formed by the mixing of glass powder I and glasspowder II. The preparation method comprises the following steps: uniformly mixing the organic additive, ethyl cellulose, terpilenol and texanol ester alcohol under the water bath condition to obtaina carrier; adding the mixed glass system and the inorganic additive into the carrier, and uniformly mixing the mixture; and adding the silver powder system into the system at the step 2, and performing uniform mixing, rolling and filtering to obtain the back conductive silver paste. According to the invention, the PERC back silver paste guarantees the characteristics of the traditional non-contactsilver paste, is fewer in damages to an aluminum oxide passivation layer, is high in welding reliability of a back silver paste sintered electrode due to the fact that a mixed glass system is adopted, and has excellent comprehensive performances under the condition that the actual temperature is 740 DEG C-780 DEG C.

Description

technical field [0001] The invention relates to a preparation process of conductive paste for the back of PERC crystalline silicon cells, in particular to a silver conductive paste on the back of PERC crystalline silicon solar cells with high reliability, and belongs to the technical field of solar cell preparation. Background technique [0002] With the development of human society and industry, human beings consume more and more energy. Solar energy is the most abundant and inexhaustible source of permanent energy and has no pollution. It plays an important role in the development of an environment-friendly society. The utilization of solar energy has become the focus of research in various countries. In recent years, the power generation efficiency of crystalline silicon solar cells has increased year by year. Among them, PERC cells have attracted widespread attention in the industry due to their high photoelectric conversion efficiency. [0003] Compared with convention...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/16H01B1/22H01B13/00H01L31/0224B22F1/00
Inventor 孟淑媛程晨琛唐元勋谢继峰刘友朋卢波
Owner ZHEJIANG GUANGDA ELECTRONICS TECH
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