Enhanced transistor based on III oxide passivation and manufacturing method of enhanced transistor

Abstract

The invention discloses an enhanced transistor based on III oxide passivation and a manufacturing method of the enhanced transistor. The manufacturing method comprises the steps of growing and forminga heterojunction on a substrate, wherein the heterojunction comprises a first semiconductor and a second semiconductor formed on the first semiconductor, the second semiconductor has a band gap whichis wider than the first semiconductor, and two-dimensional electron gas is formed in the heterojunction; forming a cap layer on the second semiconductor, wherein the cap layer comprises a doping region and passivation regions, and the doping region is composed of a third semiconductor and is completely covered by the gate, the passivation regions are distributed between the gate and the drain andbetween the gate and the source, and the third semiconductor is used for exhausting the two-dimensional electron gas distributed in a gate lower region in the heterojunction; and making the source, the drain and the gate. According to the enhanced transistor disclosed by the invention, the uniformity, repeatability and introduction damage problems caused by etching the P-type doping region can beavoided, and the device reliability problem caused by the fact that a high-resistance layer formed by hydrogen plasma passivation is possibly re-activated at a high temperature can be avoided.

Description

technical field [0001] The invention relates to an enhanced transistor, in particular to an enhanced transistor based on Group III oxide passivation and a manufacturing method thereof, belonging to the technical field of semiconductor devices. Background technique [0002] With the rapid development of the economy in today's era, people's awareness of environmental protection and resource conservation is becoming stronger and stronger, requiring lower and lower losses and higher efficiency in the process of energy conversion. In order to achieve this low loss and high efficiency Requirements, power electronic technology is needed to control energy conversion, and the core device of power conversion in power electronic system-power device is used to effectively convert and control energy, so as to reduce energy consumption in the conversion process and realize high-efficiency conversion process . However, traditional power devices can no longer meet the existing technologica...

AI Technical Summary

Problems solved by technology

This method makes the P-type doped region capping layer and H 2 The plasma reaction forms a high-resistance layer, which avoids the problems of etching uniformity, repeatability and introduction of damage caused by the etching method, but the P-type doped region in the non-gate region lies in the H 2 The high-resistance layer formed by plasma passivation, when the operating temperature of the device exceeds 450 ° C, the high-resistance layer in the passivated P-type doped region may be reactivated, so the long-term reliability of the hydrogen plasma passivation method needs to be further improved. verify

In addition, although the P-type doped region in the non-gate region is passivated into a high-resistance layer, it still has a certain polarization effect, which will reduce the two-dimensional electron gas concentration affecting the channel and reduce the saturation current.

Images