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P-type tunneling oxide passivation contact solar cell and preparation method thereof

A technology of solar cells and oxides, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reducing the conversion efficiency of cells, affecting the effect of passivation, and reducing the passivation ability, achieving excellent interface passivation effect, reducing The effect of compounding speed and high conversion efficiency

Pending Publication Date: 2020-01-14
TONGWEI SOLAR (ANHUI) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in the laser etching area on the back, part of the passivation layer is removed, and the passivation ability decreases, which directly affects the overall back passivation effect, resulting in a reduction in the conversion efficiency of the cell.

Method used

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  • P-type tunneling oxide passivation contact solar cell and preparation method thereof
  • P-type tunneling oxide passivation contact solar cell and preparation method thereof

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Embodiment 1

[0036] A method for preparing a P-type tunnel oxide passivation contact solar cell, comprising the following steps:

[0037] (S1), using alkali texture, P-type silicon 6 is placed in the groove to remove the damaged layer and texture, forming a 0.5 μm high pyramid texture;

[0038] (S2), using phosphorus oxychloride POCl 3 Carry out high-temperature diffusion, the reaction temperature is 750°C, and the reaction time is 30 minutes, and an N-type heavily doped silicon layer 5 is formed on the surface of the P-type silicon 6;

[0039] (S3), using HF solution to remove the phosphosilicate glass layer PSG on the surface of the P-type silicon 6;

[0040] (S4), using the RCA wet chemical method to clean the surface of the silicon wafer;

[0041] (S5), use low-pressure chemical vapor deposition (LPCVD) or plasma-enhanced chemical vapor deposition (PECVD) to form a silicon dioxide layer 4 on the front of the P-type silicon 6, and the thickness of the N-type heavily doped polysilicon la...

Embodiment 2

[0049] A method for preparing a P-type tunnel oxide passivation contact solar cell, comprising the following steps:

[0050] (S1), using alkali texture, P-type silicon 6 is placed in the groove to remove the damaged layer and texture, forming a 5 μm high pyramid texture;

[0051] (S2), using phosphorus oxychloride POCl 3 Carry out high-temperature diffusion, the reaction temperature is 850°C, and the reaction time is 60 minutes, and an N-type heavily doped silicon layer 5 is formed on the surface of the P-type silicon 6;

[0052] (S3), using HF solution to remove the phosphosilicate glass layer PSG on the surface of the P-type silicon 6;

[0053] (S4), using the RCA wet chemical method to clean the surface of the silicon wafer;

[0054] (S5), use low-pressure chemical vapor deposition (LPCVD) or plasma-enhanced chemical vapor deposition (PECVD) to form a silicon dioxide layer 4 on the front of the P-type silicon 6, and the thickness of the N-type heavily doped polysilicon la...

Embodiment 3

[0062] A method for preparing a P-type tunnel oxide passivation contact solar cell, comprising the following steps:

[0063] (S1), using alkali texture, P-type silicon 6 is placed in the groove to remove the damaged layer and texture, forming a 2 μm high pyramid texture;

[0064] (S2), using phosphorus oxychloride POCl 3 Carry out high-temperature diffusion, the reaction temperature is 800°C, and the reaction time is 50 minutes, and an N-type heavily doped silicon layer 5 is formed on the surface of the P-type silicon 6;

[0065] (S3), using HF solution to remove the phosphosilicate glass layer PSG on the surface of the P-type silicon 6;

[0066] (S4), using the RCA wet chemical method to clean the surface of the silicon wafer;

[0067] (S5), use low-pressure chemical vapor deposition (LPCVD) or plasma-enhanced chemical vapor deposition (PECVD) to form a silicon dioxide layer 4 on the front of the P-type silicon 6, and the thickness of the N-type heavily doped polysilicon la...

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Abstract

The invention discloses a P-type tunneling oxide passivation contact solar cell. The P-type tunneling oxide passivation contact solar cell comprises P-type silicon, an N-type heavily doped silicon layer and a front SiNx antireflection layer are sequentially deposited on the front surface of the P-type silicon from inside to outside, a silicon dioxide layer and an N-type heavily doped polycrystalline silicon layer which are in contact with each other are arranged in the N-type heavily doped silicon layer, the silicon dioxide layer is arranged on one side close to the P-type silicon, an Ag gatefinger electrode is arranged in the front SiNx antireflection layer, and the Ag gate finger electrode and the N-type heavily doped polycrystalline silicon layer correspond to each other and form ohmiccontact; and an aluminum oxide layer and a back SiNx antireflection layer are sequentially deposited on the back surface of the P-type silicon from inside to outside. The TOPCon solar cell structureprepared by the invention can combine the advantages of an existing heterojunction structure and a traditional polycrystalline silicon junction structure, namely, has high carrier selectivity, high temperature stability and excellent interface passivation effect, so that the solar cell with high conversion efficiency and high stability is achieved.

Description

technical field [0001] The invention relates to the technical field of photovoltaic power generation, in particular to a P-type tunneling oxide passivation contact solar cell and a preparation method thereof. Background technique [0002] Photovoltaic power generation is a technology that directly converts light energy into electrical energy by using the photovoltaic effect of the semiconductor interface. If the light is irradiated on the solar cell and the light is absorbed at the interface layer, photons with sufficient energy can be transferred between P-type silicon and N Electrons are excited from covalent bonds in silicon, so that electron-hole pairs are generated. The electrons and holes near the interface layer will be separated from each other by the electric field effect of the space charge before recombination. Electrons move to the positively charged N region and holes move to the negatively charged P region. Sunlight shines on the semiconductor p-n junction to...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0288H01L31/068H01L31/18
CPCH01L31/02167H01L31/02168H01L31/0288H01L31/0682H01L31/1804H01L31/1868Y02E10/546Y02E10/547Y02P70/50
Inventor 张鹏尹丙伟王岚余波王涛杨蕾
Owner TONGWEI SOLAR (ANHUI) CO LTD
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